Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: An apparatus for applying a liquid adhesive according to an embodiment of the present invention includes: a side part including a support surface configured to support one surface of an upright secondary battery; and a lower part including an adhesion space configured to accommodate the liquid adhesive therein and configured to accommodate insertion of a sealing part disposed at the one surface of the upright secondary battery, the lower part having a passage extending from an outer periphery of the lower part to the adhesion space, the passage configured to permit the liquid adhesive to flow from the outer periphery to the adhesion space, wherein the lower part is disposed below the side part.

Abstract: Image sensors are provided. The image sensors may include a substrate including first, second, third and fourth regions, a first photoelectric conversion element in the first region, a second photoelectric conversion element in the second region, a third photoelectric conversion element in the third region, a fourth photoelectric conversion element in the fourth region, a first microlens at least partially overlapping both the first and second photoelectric conversion elements, and a second microlens at least partially overlapping both the third and fourth photoelectric conversion elements. The image sensors may also include a floating diffusion region and first, second and third pixel transistors configured to perform different functions from each other. Each of the first, second and third pixel transistors may be disposed in at least one of first, second, third and fourth pixel regions. The first pixel transistor may include multiple first pixel transistors.

Abstract: An image sensor may include a first photo gate and a second photo gate each extending substantially in parallel in a first direction, the first photo gate and the second photo gate isolated from direct contact with each other in a second direction, the second direction substantially orthogonal to the first direction, a first overflow gate between the first photo gate and the second photo gate, the first overflow gate extending in the first direction, a first charge collection region on the first photo gate, a second charge collection region on the second photo gate and isolated from direct contact with the first charge collection region in the second direction, a first floating diffusion region that may receive first charge from the first charge collection region and output the first charge, and a second floating diffusion region that may receive second charge from the second charge collection region and output the second charge.

Abstract: Provided is a depth sensor which includes a pixel and a row driver that controls the pixel, the pixel including a first tap, a second tap, a third tap, and a fourth tap, an overflow transistor, and a photoelectric conversion device. Each of the first tap, the second tap, the third tap, and the fourth tap includes a photo transistor, a transfer transistor, and a readout circuit. In a first integration period of a global mode, the row driver activates a second photo gate signal controlling the photo transistor of the second tap and a third photo gate signal controlling the photo transistor of the third tap. In a second integration period of the global mode, the row driver activates a first photo gate signal controlling the photo transistor of the first tap and a fourth photo gate signal controlling the photo transistor of the fourth tap.

Abstract: A method and an apparatus for providing, setting, maintaining, and releasing a packet data network (PDN) connection on the basis of a local area in a wireless communication system are provided. The method includes receiving the PDN subscription information on the basis of the local area from a business operator server, inspecting whether the current location information for the terminal exists in the PDN subscription information on the basis of the local area, and starting a procedure for setting the PDN on the basis of the local area when the current location information exists therein.

Abstract: The present disclosure relates to a linear low-density polyethylene copolymer and a preparation method thereof. The linear low-density polyethylene copolymer has a long-chain branching (LCB) distribution similar to that of general metallocene polyethylene (mPE) and has good mechanical properties such as processability and toughness. Thus, the linear low-density polyethylene copolymer is useful for molding into shrinkage films, agricultural films, etc.

Abstract: A method and an apparatus are provided in a wireless communication system. The method includes generating mobility history information upon entering an evolved universal mobile telecommunications system (UMTS) radio access network (E-UTRAN) from another radio access technology (RAT), the mobility history information including information on a time duration for which the terminal stayed outside of the E-UTRAN; receiving, from a base station, a request for the mobility history information; and transmitting the mobility history information to the base station, in response to the request.

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

Abstract: The present invention relates to a resin composition for inkjet printing used to form a resin layer serving as an insulation layer of a printed wiring board by an inkjet printing method.

Abstract: Discussed is a secondary battery pack having effectively improved manufacturing efficiency and product durability. In this regard, the secondary battery pack includes: a battery cell; a protection circuit module mounted on a terrace structure where an electrode lead is formed; a holder including a body portion having a plate shape such that the battery cell is mounted on one surface, and a partition wall protruding from the body portion in an upward direction to surround at least a portion of a side portion of the battery cell in a horizontal direction; and an insulating molding member including an electrical insulating material, and including a protecting portion coated on and bonded to at least one region of a printed circuit board and a fixing portion protruding and extending from the protecting portion in a direction where the partition wall is located and fixed to one region of the partition wall.

Abstract: Disclosed are a broadcast signal receiver and an operation method thereof. When there are multiple broadcast signals representing the same broadcast content, the broadcast signal receiver calculates signal quality values of the respective broadcast signals, select one of the plurality of broadcast signals for a specific channel, on the basis of the signal quality values, and sets information of the selected broad cast signal as the specific channel in the channel map. Therefore, the broadcast signal receiver can prevent the number of channels from being increased due to a plurality of same channels and can provide a higher quality image to the user.

Abstract: A pouch-type secondary battery pack having a simplified manufacturing process with a reduced number of components, including a battery cell in which an electrode assembly is sealed in a pouch exterior together with an electrolyte, the battery cell having an electrode lead formed at one side thereof; and a protection circuit module having a printed circuit board with a protection circuit formed thereon and a lead connection plate formed at one surface of the printed circuit board so that the printed circuit board is electrically connected to the electrode lead of the battery cell, the protection circuit module having an exposing portion formed at the other surface of the printed circuit board to expose at least a portion of the lead connection plate.

Abstract: A semiconductor device has a substrate and a semiconductor die disposed over the substrate. An encapsulant is deposited over the semiconductor die and substrate with a surface of the semiconductor die exposed from the encapsulant. A first shielding layer is formed over the semiconductor die. In some embodiments, the first shielding layer includes a stainless steel layer in contact with the surface of the semiconductor die and a copper layer formed over the stainless steel layer. The first shielding layer may further include a protective layer formed over the copper layer. One embodiment has a heatsink bonded to the semiconductor die through a solder layer. A second shielding layer can be formed over a side surface of the semiconductor die.

Abstract: Disclosed is a complementary metal oxide semiconductor (CMOS) image sensor. The image sensor comprises a first separation zone in a substrate, the first separation zone defining first and second pixel regions arranged in a first direction, the first separation zone including first parts substantially parallel extending in the first direction, and the substrate including a first active region vertically overlapping one of the first parts and a second active region vertically overlapping another of the first parts. The image sensor further comprises first and second photoelectric conversion devices arranged in the first direction on at least one of the first and second pixel regions in the substrate, and a source follower gate on the first active region of the substrate.

Abstract: A catalyst composition for polymerizing a polyolefin having excellent processability and impact strength, a process for producing a polyolefin and a polyolefin resin thereof are disclosed. The catalyst composition comprises at least one first organometallic compound of following formula 1; at least one second organometallic compound of following formula 2; and aluminoxane. The polyolefin resin satisfies following properties (i) to (iv) and (vi), (i) melt flow index (ASTM D1238), measured at 190° C., under a load of 2.16 kg: 0.1 to 1.5 g/10 min, (ii) density: 910 to 930 kg/m3, (iii) the ratio (Mw/Mn), as measured by gel permeation chromatography (GPC): 3.0 to 7.0, (iv) the ratio (Mz/Mw), as measured by GPC: 2.2 to 4.5, and (vi) when the TREF curve of multimodal distribution is deconvoluted, the area of TREF curve having a peak at 50 to 74° C. is 40 to 75% of the total area of the TREF curve.

Abstract: Operation methods of a first communication node in a network, in particular, an Ethernet-based vehicle network, include: transmitting, by the first communication node to at least one communication node which is connected to the first communication node, a first frame requesting state information of a physical layer between the first communication node and the at least one communication node; receiving, by the first communication node from the at least one communication node, a second frame in response to the first frame; and identifying, by the first communication node, a state of the physical layer based on the second frame when the second frame is received.

Abstract: An apparatus for controlling a curtain of a vehicle includes a back seat monitor configured to provide an image of an occupant and a vehicle-mounted curtain configured to block out external light. An illumination sensor is configured to detect illumination of the external light. An occupant detecting sensor is configured to detect a boarding status of the occupant. A curtain actuator is configured to automatically control an operation of the vehicle-mounted curtain according to the boarding status of the occupant and a reference illumination value in an automatic mode and according to an operational status of the back seat monitor and the reference illumination value during a manual mode.

Abstract: A method and system in which upon occurrence of a P-CSCF failure, a network sends an IMS reregistration request message to a UE. An S-CSCF or an AS monitors a P-CSCF to detect occurrence of a failure in the P-CSCF. Upon detecting the occurrence of a P-CSCF failure, the S-CSCF or the AS sends a request message for IMS reregistration to the UEs being served by the failed P-CSCF. In this manner, the UE can continuously receive the service even though a failure occurs in the P-CSCF.