Abstract: An apparatus for fabricating a semiconductor device includes a chamber, a processing part inside the chamber, a gas injection pipe connected to the chamber, a gas pumping pipe connected to the chamber, and a baffle assembly embedded in a chamber wall, and the baffle assembly includes a baffle plate having baffle holes, and a baffle guide surrounding an outer surface of the baffle plate.

Abstract: A method of calculating a thickness of a layer may include forming the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, and calculating the thickness of the layer from the optical emission spectrum data. A method of forming a layer may include depositing the layer on a substrate in a chamber, measuring optical emission spectrum data from the chamber, calculating a thickness of the layer using the optical emission spectrum data, and ending the depositing of the layer when the calculated thickness of the layer is within a target thickness range.

Abstract: A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.

Abstract: A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.

Abstract: Disclosed herein is an apparatus for manufacturing a megapixel multi-focus lens. The lens manufacturing apparatus of the present invention includes a loading means for supplying a mold body, in which a blank, interposed between upper and lower molds, is placed, to a forming position, a compression-forming means, which preheats, compresses and cools the supplied mold body such that the blank is formed into a multi-focus lens having an aspherical surface, and a discharge means, which discharges the multi-focus lens formed by the compression-forming means. Therefore, processes from loading to discharging can be automated, so that the productivity of the apparatus for manufacturing the multi-focus lens can be markedly enhanced. Furthermore, because the lens manufacturing apparatus is covered with a cabinet, a superior appearance thereof is ensured.

Abstract: A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.

Abstract: Disclosed herein is an apparatus for manufacturing a megapixel multi-focus lens. The lens manufacturing apparatus of the present invention includes a loading means for supplying a mold body, in which a blank, interposed between upper and lower molds, is placed, to a forming position, a compression-forming means, which preheats, compresses and cools the supplied mold body such that the blank is formed into a multi-focus lens having an aspherical surface, and a discharge means, which discharges the multi-focus lens formed by the compression-forming means. Therefore, processes from loading to discharging can be automated, so that the productivity of the apparatus for manufacturing the multi-focus lens can be markedly enhanced. Furthermore, because the lens manufacturing apparatus is covered with a cabinet, a superior appearance thereof is ensured.

Abstract: A method of forming a metal wiring layer of a semiconductor device produces metal wiring that is free of defects. The method includes forming an insulating layer pattern defining a recess on a substrate, forming a conformal first barrier metal layer on the insulating layer pattern, and forming a second barrier metal layer on the first barrier metal layer in such a way that the second barrier metal layer will facilitate the growing of metal from the bottom of the recess such that the metal can fill a bottom part of the recess completely and thus, form damascene wiring. An etch stop layer pattern is formed after the damascene wiring is formed so as to fill the portion of the recess which is not occupied by the damascene wiring.

Abstract: A metal layer can be formed in an integrated circuit by forming a metal-nitride layer in a recess including a first concentration of nitrogen in the metal-nitride layer at a bottom of the recess that is less than a second concentration of nitrogen in the metal-nitride layer proximate an opening of the recess. A metal layer can be formed on the metal-nitride layer including in the recess.