Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: A method for fabricating semiconductor device includes forming an alternating stack that includes a lower multi-layered stack and an upper multi-layered stack by alternately stacking a dielectric layer and a sacrificial layer over a substrate, forming a vertical trench that divides the upper multi-layered stack into dummy stacks, and forming an asymmetric stepped trench that is extended downward from the vertical trench to divide the lower multi-layered stack into a pad stack and a dummy pad stack, wherein forming the asymmetric stepped trench includes forming a first stepped sidewall that is defined at an edge of the pad stack, and forming a second stepped sidewall that is defined at an edge of the dummy pad stack and occupies less area than the first stepped sidewall.

Abstract: A gate driving circuit that minimizes output characteristic deviation between a plurality of scan output buffer units, and a display device comprising the gate driving circuit, are discussed. An Nth stage of the gate driving circuit, N being a natural number, can include a node controller configured to control voltages of a first node and a second node according to a set signal and a reset signal, a carry pulse output unit configured to receive a carry clock and output the carry clock as a carry pulse according to voltages of the first node and the second node, and a plurality of scan pulse output units configured to receive a plurality of scan clocks and output each of the scan clocks as a scan pulse according to voltages of the first node and the second node.

Abstract: A gate driving circuit that minimizes output characteristic deviation between a plurality of scan output buffer units, and a display device comprising the gate driving circuit, are discussed. An Nth stage of the gate driving circuit, N being a natural number, can include a node controller configured to control voltages of a first node and a second node according to a set signal and a reset signal, a carry pulse output unit configured to receive a carry clock and output the carry clock as a carry pulse according to voltages of the first node and the second node, and a plurality of scan pulse output units configured to receive a plurality of scan clocks and output each of the scan clocks as a scan pulse according to voltages of the first node and the second node.

Abstract: A cooling apparatus for a hot stamping die is configured such that a refrigerant in a two-phase coexisting state of a liquid phase and a gas phase is supplied to a cooling channel formed in the hot stamping die to cool the hot stamping die using latent heat of the refrigerant. The refrigerant maintains a constant temperature in the cooling channel of the hot stamping die, which ensures uniform cooling of the hot stamping die.

Abstract: A cooling apparatus for a hot stamping die is configured such that a refrigerant in a two-phase coexisting state of a liquid phase and a gas phase is supplied to a cooling channel formed in the hot stamping die to cool the hot stamping die using latent heat of the refrigerant. The refrigerant maintains a constant temperature in the cooling channel of the hot stamping die, which ensures uniform cooling of the hot stamping die.

Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

Abstract: A method for searching a digital broadcasting channel in a digital broadcasting reception device for receiving digital broadcasting signals from local-area broadcasting stations that provide broadcasting services for specific areas. A location information code of each area and a list of digital broadcasting channels through which a service is possible in each area are mapped and stored. When a user requests a digital broadcasting channel search, a determination is made as to whether a location information code of an area where the digital broadcasting reception device is located matches one of location information codes stored on an area-by-area basis. When the matched location information code is present as a result of the determination, only broadcasting channels of the stored digital broadcasting channel list mapped to the matched location information code are searched, and the broadcasting channels through which broadcasting can be received are displayed.