Abstract: A semiconductor device includes a semiconductor substrate, a storage pad and a bit line pad on the semiconductor substrate, a first interlayer insulating layer covering the bit line pad and including a bit line contact hole having a width greater than a width of the bit line pad, a barrier insulating layer on sidewalls of the first interlayer insulating layer and upper portions of sidewalls of the bit line pad that are exposed by the bit line contact hole, a bit line plug in the bit line contact hole and on the barrier insulating layer; and a storage plug penetrating the first interlayer insulating layer and contacting the storage pad.

Abstract: A semiconductor device includes a semiconductor substrate, a storage pad and a bit line pad on the semiconductor substrate, a first interlayer insulating layer covering the bit line pad and including a bit line contact hole having a width greater than a width of the bit line pad, a barrier insulating layer on sidewalls of the first interlayer insulating layer and upper portions of sidewalls of the bit line pad that are exposed by the bit line contact hole, a bit line plug in the bit line contact hole and on the barrier insulating layer; and a storage plug penetrating the first interlayer insulating layer and contacting the storage pad.

Abstract: Methods of forming electrically interconnected lines using organic compound cleaning agents include the steps of forming a first electrically conductive line on a substrate and then forming a first electrically insulating layer on the first electrically conductive line to electrically isolate the first conductive line from adjacent regions and lines. An organic spin-on-glass (SOG) passivation layer is then formed as a planarization layer on the first electrically insulating layer. The organic SOG layer is then etched-back to define a first etched surface thereon, using a carbon-fluoride gas which also preferably contains argon. The organic SOG layer may even be sufficiently etched back to expose an upper surface of the first electrically insulating layer. The first etched surface is then exposed to an organic compound cleaning agent so that organic residues can be removed from the etched surface so that layers subsequently formed on the etched surface are less susceptible to lift-off and flaking.