Abstract: To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.

Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.

Abstract: To pattern a gate electrode, a mandrel of material is initially deposited and then patterned. In an embodiment the patterning is performed by performing a first etching process and to obtain a rough target and then to perform a second etching process with different etch parameters to obtain a precise target. The mandrel is then used to form spacers which can then be used to form masks to pattern the gate electrode.

Abstract: A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.

Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.

Abstract: A method for manufacturing a semiconductor device includes forming a patterned photoresist layer over a substrate, performing a plasma ashing process to the patterned photoresist layer, thereby removing a portion of the patterned photoresist layer, exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone, thereby removing other portions of the patterned photoresist layer, and performing a cleaning of the patterned photoresist layer after exposing the patterned photoresist layer to broadband ultraviolet radiation and ozone.