Patents by Inventor Sung-Hui CHEN

Sung-Hui CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12051668
    Abstract: A method of forming a semiconductor device includes applying an adhesive material in a first region of an upper surface of a substrate, where applying the adhesive material includes: applying a first adhesive material at first locations of the first region; and applying a second adhesive material at second locations of the first region, the second adhesive material having a different material composition from the first adhesive material. The method further includes attaching a ring to the upper surface of the substrate using the adhesive material applied on the upper surface of the substrate, where the adhesive material is between the ring and the substrate after the ring is attached.
    Type: Grant
    Filed: May 26, 2023
    Date of Patent: July 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kuan-Yu Huang, Li-Chung Kuo, Sung-Hui Huang, Shang-Yun Hou, Tsung-Yu Chen, Chien-Yuan Huang
  • Patent number: 11462382
    Abstract: The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.
    Type: Grant
    Filed: February 25, 2021
    Date of Patent: October 4, 2022
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Hsun-Po Wen, Sung-Hui Chen
  • Publication number: 20220270846
    Abstract: The present disclosure provides a substrate-processing apparatus. The substrate-processing apparatus includes an ion implanter and a controller associated with the ion implanter. The ion implanter is configured to implant ions into a substrate using an ion beam. The controller is configured to monitor an initial implantation profile of the ion beam and tune the ion implanter to provide the ion beam having a desired implantation profile based on the initial implantation profile and the desired implantation profile.
    Type: Application
    Filed: February 25, 2021
    Publication date: August 25, 2022
    Inventors: Hsun-Po WEN, Sung-Hui CHEN