Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A semiconductor device includes; an active pattern on a substrate, gate structures in which each gate structure includes a gate electrode intersecting the active pattern and a gate capping pattern on the gate electrode, a source/drain pattern disposed on the active pattern between adjacent gate structures, a lower active contact connected to the source/drain pattern, an etching stop film extending along an upper surface of the lower active contact without contacting an upper surface of the gate capping pattern, and an upper active contact connected to the lower active contact, wherein a bottom surface of the upper active contact is lower than the upper surface of the gate capping pattern.

Abstract: A semiconductor device comprises a first gate structure extending in a first direction and including a first gate electrode and a first gate capping pattern, a second gate structure spaced apart from the first gate structure and extending in the first direction, and including a second gate electrode and a second gate capping pattern, an active pattern extending in a second direction, the active pattern below the second gate structure, an epitaxial pattern on one side of the second gate structure and on the active pattern, a gate contact connected to the first gate electrode, and a node contact connected to the second gate electrode and to the epitaxial pattern. An upper surface of the gate contact is at a same level as the first gate capping pattern, and an upper surface of the node contact is lower than the upper surface of the first gate capping pattern.

Abstract: A liquid crystal display device and method of manufacturing a liquid crystal display device are provided. The liquid crystal display device includes: a thin film transistor substrate, a color filter substrate on the thin film transistor substrate, a transparent conductive plate on the color filter substrate, a pad portion on the thin film transistor substrate, a static-electricity transmission electrode on a region of the pad portion adjacent to the color filter substrate, a conductive member configured to electrically connect the transparent conductive plate and the static-electricity transmission electrode to each other, and a plurality of lattice patterns on the static-electricity transmission electrode.

Abstract: Disclosed are methods of manufacturing a metal wiring buried flexible substrate by using plasma and flexible substrates manufactured by the same. The method includes pre-treating a substrate by irradiating the plasma on the surface of the substrate (Step 1), forming a metal wiring on the pre-treated substrate in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the substrate including the metal wiring formed thereon in Step 2 and curing (Step 3), and separating the polymer layer formed in Step 3 from the substrate in Step 1 (Step 4). The metal wiring may be inserted into the flexible substrate, and the resistance of the wiring may be decreased. The metal wiring may be clearly separated from the substrate, and impurities on the substrate surface may be clearly removed. The flexible substrate may be easily separated by applying only physical force.

Abstract: Disclosed are a method of manufacturing a metal wiring buried flexible substrate and a flexible substrate manufactured by the same. The method includes coating a sacrificial layer including a polymer soluble in water or an organic solvent, or a photodegradable polymer on a substrate (Step 1), forming a metal wiring on the sacrificial layer in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the sacrificial layer including the metal wiring formed thereon in Step 2 and curing (Step 3) and separating the polymer layer in Step 3 from the substrate in Step 1 by removing through dissolving in the water or the organic solvent or photodegrading only the sacrificial layer present between the substrate in Step 1 and the polymer layer in Step 3 (Step 4).

Abstract: The present disclosure relates to a method of synthesis of Lithium Titanate Oxide used for a cathode of Lithium ion battery, the method comprising: (A) diluting TiCl4 with TiOCl2; (B) adding YCl3 or NbCl5 at the rate of 0.1˜2 mol % to Ti(mol); (C) forming a complex salt by dissolving to put at least one selected from a group consisting of Hydroxy propyl cellulose or Polyethylene glycol in a solvent, the Hydroxy propyl cellulose being a complexing agent and being a dispersing agent as well, whereas the Polyethylene glycol being a dispersing agent; (D) synthesizing a titanium precursor by adding an aqueous ammonia solution; (E) preparing Y or Nb doped titanium dioxide(TiO2) powder by heat-treating the synthetic product in a temperature of 500˜700° C.; and (F) mixing the Y or Nb doped TiO2 powder with LiOH.H2O and heat-treating the mixture in a temperature of 800˜900° C.

Abstract: A liquid crystal display device and method of manufacturing a liquid crystal display device are provided. The liquid crystal display device includes: a thin film transistor substrate, a color filter substrate on the thin film transistor substrate, a transparent conductive plate on the color filter substrate, a pad portion on the thin film transistor substrate, a static-electricity transmission electrode on a region of the pad portion adjacent to the color filter substrate, a conductive member configured to electrically connect the transparent conductive plate and the static-electricity transmission electrode to each other, and a plurality of lattice patterns on the static-electricity transmission electrode.

Abstract: Disclosed are methods or manufacturing a metal wiring buried flexible substrate by using plasma and flexible substrates manufactured by the same. The method includes pre-treating a substrate by irradiating the plasma on the surface of the substrate (Step 1), forming a metal wiring on the pre-treated substrate in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the substrate including the metal wiring formed thereon in Step 2 and curing (Step 3), and separating the polymer layer formed in Step 3 from the substrate in Step 1 (Step 4), The metal wiring may be inserted into the flexible substrate, and the resistance of the wiring may be decreased. The metal wiring may be clearly separated from the substrate, and impurities on the substrate surface may be clearly removed. The flexible substrate may be easily separated by applying only physical force.

Abstract: Disclosed are a method of manufacturing a metal wiring buried flexible substrate and a flexible substrate manufactured by the same. The method includes coating a sacrificial layer including a polymer soluble in water or an organic solvent, or a photodegradable polymer on a substrate (Step 1), forming a metal wiring on the sacrificial layer in Step 1 (Step 2), forming a metal wiring buried polymer layer by coating a curable polymer on the sacrificial layer including the metal wiring formed thereon in Step 2 and curing (Step 3) and separating the polymer layer in Step 3 from the substrate in Step 1 by removing through dissolving in the water or the organic solvent or photodegrading only the sacrificial layer present between the substrate in Step 1 and the polymer layer in Step 3 (Step 4).

Abstract: The present disclosure relates to a method of synthesis of Lithium Titanate Oxide used for a cathode of Lithium ion battery, the method comprising: (A) diluting TiCl4 with TiOCl2; (B) adding YCl3 or NbCl5 at the rate of 0.1˜2 mol % to Ti(mol); (C) forming a complex salt by dissolving to put at least one selected from a group consisting of Hydroxy propyl cellulose or Polyethylene glycol in a solvent, the Hydroxy propyl cellulose being a complexing agent and being a dispersing agent as well, whereas the Polyethylene glycol being a dispersing agent; (D) synthesizing a titanium precursor by adding an aqueous ammonia solution; (E) preparing Y or Nb doped titanium dioxide(TiO2) powder by heat-treating the synthetic product in a temperature of 500˜700° C.; and (F) mixing the Y or Nb doped TiO2 powder with LiOH.H2O and heat-treating the mixture in a temperature of 800˜900° C.

Abstract: The present invention is based on an electrode binding material including polyacrylics and a functional group substituent(Li, Na, K) as a binder of an electrode. The present invention provides a polyacrylic acid an electrode binding material including a polyacrylics mixture having a high degree of polymerization and a functional group with Li, Na or K being substituted and high efficiency Lithium secondary battery utilizing a silicon anode active material etc. using the same. Therefore, the electrode binding material of the present invention has an excellent binding force, and can reduce side reactions in reactions of a secondary battery, and maintain a stable cycle property, and also enhance electric performance.

Abstract: A transmitter of a Diagonal Bell Laboratories Layered Space-Time (DBLAST) system includes an interleaver for performing interleaving for all sub-streams in a stream of a transmission signal, thereby generating an interleaved signal, a symbol repeater for generating a reverse-arranged signal rearranged in a reverse order to the interleaved signal, and a DBLAST transmit unit for transmitting the interleaved signal and the reverse-arranged signal through multiple transmit antennas. A receiver of a DBLAST system includes a DBLAST receive unit for receiving signals through multiple transmit antennas, a repeating symbol combiner for generating a combined signal; a deinterleaver for generating a deinterleaved signal; and a decoder for decoding the deinterleaved signal.

Abstract: A method of generating a frame sync signal of a mobile terminal is provided. The mobile terminal includes an input unit, which receives through an I-channel and a Q-channel frames into which a data frame transmitted from a base station is divided; a preamble detection unit, which detects timing information of the base station from a preamble pattern of the received frames; a frame sync pattern detection unit, which receives the frame through the I-channel and an output of the preamble detection unit and verifies the timing information; and a frame sync signal generation unit, which generates a frame sync signal according to an output of the frame sync pattern detection unit.

Abstract: A synchronous transmitter and receiver utilizing a spread spectrum communication method includes a pseudo noise code generator for generating a preset pseudo noise (PN) code; a spectrum spreading device for band-spreading input data in accordance with a pseudo noise code; a modulator for modulating an intermediate frequency signal to an in-phase and a quadrature phase by means of the pseudo noise code and spread spectrum data according to a quadrature phase shift keying modulation method; and a transmitter for transmitting a carrier wave modulated by the modulated signal.

Abstract: A method and an apparatus for supporting a discontinuous reception (DRX) operation in a Node B in a mobile communication system are provided. The method includes defining a second System Frame Number (SFN) where one cycle of a first SFN corresponds to one bit, transmitting information on the second SFN to a User Equipment (UE), determining a second SFN which is used to transmit a paging signal to the UE, determining a first SFN which is used to transmit the paging signal in the determined second SFN, and transmitting the paging signal to the UE at the determined first SFN.