Patents by Inventor Sung-hun Park

Sung-hun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110162003
    Abstract: A broadcasting system where user's participation is allowed, additional information personalized for each of users/local areas/time is inserted into an AV and the AV including the additional information provides a user and a method of providing a personalized broadcasting service in the same are disclosed. The method of providing a personalized broadcasting service in a broadcasting system includes inserting additional information registered by a first user into an AV, and displaying the AV into which the additional information is inserted for a second user.
    Type: Application
    Filed: December 28, 2010
    Publication date: June 30, 2011
    Applicant: ALTICAST CORPORATION
    Inventors: Kil-Su HA, Su-Kyung Kim, Sung-Hun Park
  • Patent number: 6573547
    Abstract: A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.
    Type: Grant
    Filed: December 12, 2001
    Date of Patent: June 3, 2003
    Assignee: Hynix Semiconductor Inc.
    Inventors: Byoung-kwon Ahn, Sung-hun Park
  • Publication number: 20020094624
    Abstract: A method for forming a cell capacitor used for a high-integrated DRAM is disclosed which guarantees interfacial properties of aluminum oxide and excellent leakage current preventive properties by depositing an aluminum oxide layer and a mixed layer of TiON and TiO2 as dielectric layers on a semiconductor substrate having a predetermined lower substructure by an atomic layer deposition (ALD) method and thus forming a double layer structure, and simultaneously providing a high capacitance by using a high dielectric property of a mixed layer of TiON and TiO2.
    Type: Application
    Filed: December 12, 2001
    Publication date: July 18, 2002
    Inventors: Byoung-kwon Ahn, Sung-hun Park