Abstract: Disclosed in the present invention is a floating hologram system. The floating hologram system includes a diffuser configured to form a projection image using light beams transmitted from an image transmitter and diffuse the formed image, and a holographic optical element on which the image diffused from the diffuser is incident and which generates a virtual image floating at a position a predetermined distance therefrom and has a convex lens characteristic. A distance between the diffuser and the holographic optical element is determined based on a focal length of the holographic optical element and a distance from the holographic optical element to the virtual image.

Abstract: A bottom antireflective coating layer is made from the compositions of organic photosensitive materials that contain isoflavone chromophore by photolithography utilizing a deep ultraviolet light source for producing a submicro-level, large-scale integrated chip. A copolymer containing an isoflavone chromophore is used as a bottom antireflective coating layer for fabricating a 64-megabit or gigabit DRAM. The antireflective coating layer enables not only the suppression of reflections of light that occur under the substrate layer but also the removal of standing waves. Consequently, a high-resolution sub-micron of a 100˜200 nm integrated circuit is able to be stably formed. Therefore, it is possible to increase the production of semiconductors.

Abstract: A bottom antireflective coating layer is made from the compositions of organic photosensitive materials containing isoflavone chromophore by photolithography utilizing deep ultraviolet light source for producing a submicro-level, large-scale integrated chip. A copolymer being contained an isoflavone chromophore is used as a bottom antireflective coating layer for fabricating a 64-megabit or gigabit DRAMs. The antireflective coating layer enables not only to suppress reflection of light that occurs under the substrate layer but also to remove standing waves. Consequently, a high-resolution sub-micron of 100˜200 nm integrated circuit is able to be stably formed. Therefore, it is possible to increase the production of semiconductors.