Abstract: A battery pack includes a module assembly including a plurality of battery modules each including, on a side, a module opening through which venting gas is discharged, a pack cover facing the module opening and configured to cover the side of the module assembly, and an oxygen introduction preventing member located in a space formed between the module assembly and the pack cover and configured to prevent oxygen from being reversely introduced after venting gas is discharged in an extension direction of the space.

Abstract: A battery pack includes a module assembly including a plurality of battery modules arranged in a first direction, a vent channel located on a surface of the module assembly and configured to communicate with each of the plurality of battery modules, and a discharge delay member provided in the vent channel and configured to delay discharge of venting gas generated in at least some of the plurality of battery modules and introduced into the vent channel.

Abstract: Disclosed are a method and device for bidirectional communication in a wireless LAN. The method of a first STA comprises the steps of: receiving, from an AP, a first frame including an information element indicating TXOP sharing; confirming a shared TXOP duration on the basis of the first frame; and communicating with a second STA within the shared TXOP duration.

Abstract: A method and apparatus for NSTR communication in a communication system supporting multiple links are disclosed. A method for a first device comprises the steps of: if a first backoff operation has succeeded on a first link belonging to a first pair of NSTR links on which an STR operation of a second device is not supported, transmitting a first data frame to the second device on the first link; performing a second backoff operation for transmission of a second data frame on a second link belonging to the first pair of NSTR links; if the second backoff operation has succeeded on the second link, identifying whether or not a transmission operation of the second device is performed on the first link belonging to the pair of NSTR links; and transmitting the second data frame to the second device on the second link.

Abstract: A method and a device for direct communication in a communication system supporting multiple links are disclosed. A method of an AP MLD comprises the steps of: transmitting a trigger frame in multiple links including a first link and a second link; receiving a response frame for the trigger frame from a first STA associated with an STA MLD in the first link; receiving a first data frame from a third STA in the second link; and when a subject to receive the first data frame is a second STA associated with the STA MLD, transmitting a second data frame generated on the basis of the first data frame, to the first STA in the first link.

Abstract: Discussed is a display device including a substrate including a first region and a second region surrounding the first region, a plurality of first subpixels on the first region of the substrate, and a plurality of second subpixels on the second region of the substrate. The first region includes a transmission portion adjacent to the plurality of first subpixels. Each of the first and second subpixels includes a first electrode, a first common layer, an organic emission layer, a second common layer, and a second electrode stacked in order. The first and second common layers are located in succession in the first and second subpixels.

Abstract: A method for processing an audio signal includes setting target loudness; receiving metadata of an audio signal from a server; and adjusting the loudness of the audio signal by using the received metadata, so that the loudness of the audio signal corresponds to the set target loudness.

Abstract: A method and a device for shard communication in a wireless LAN are disclosed. A method of a first STA comprises the steps of: receiving a first frame for allocation of a shared communication period from an AP; identifying the shared communication period on the basis of one or more fields included in the first frame; and performing shared communication with a second STA in the shared communication period, wherein the shared communication period is configured within a TXOP configured between the AP and a third STA.

Abstract: A battery module includes a plurality of battery cells, at least one cooling channel provided on at least one side of the plurality of battery cells and through which a coolant for cooling the plurality of battery cells flows, and at least one cooling fin unit disposed in contact with the at least one cooling channel and having at least one support rib for supporting the at least one cooling channel.

Abstract: A battery pack has improved safety. The battery pack includes a battery module having at least one battery cell; and a thermal runaway suppression unit mounted to one side of the battery module and configured to form a positive pressure inside the battery module when an abnormal situation occurs in any one battery cell.

Abstract: An extreme ultra violet (EUV) mask is disclosed, which prevents defects from shot overlap encountered in wafer exposure as well as reflection of unnecessary EUV and DUV generated in a black border region, such that a pattern CD is reduced and defects are not created. The EUV mask includes a quartz substrate, a multi-layered reflection film formed over the quartz substrate to reflect exposure light, an absorption layer formed over the multi-layered reflection film, a black border region formed over the quartz substrate that does not include the multi-layered reflection film, and a blind layer formed in a position including at least one of over the absorption layer, over the quartz substrate, and below the quartz substrate.

Abstract: A method for forming a photomask includes detecting a defect of the photomask which has a mirror layer formed on a first surface of a substrate, and forming a recess groove on a first layer which is formed on a second surface of the substrate, wherein the coordinate of the recess groove corresponds to the coordinate of the defect.

Abstract: An EUV mask comprises a multi-reflecting layer is formed over a substrate and reflecting EUV light; an absorber layer pattern defining a sidewall formed over the multi-reflecting layer formed and selectively exposing a region of the multi-reflecting layer; and a reflecting spacer which additionally reflects the EUV light at the sidewall of the absorber layer pattern.

Abstract: A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.

Abstract: A method for correcting an image placement error in a photomask includes, forming a photomask including a light absorbing layer formed on a frame region of a substrate and a mask pattern formed on a field region inside the frame region, measuring a first registration error of the photomask, and etching a portion of the light absorbing layer on the frame region to induce a second registration error for compensating the first registration error.

Abstract: A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.

Abstract: A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern.

Abstract: A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.

Abstract: In a method of fabricating a mask for a semiconductor device, a phase shift layer and a light blocking layer are formed on a transparent substrate. The light blocking layer is patterned to form light blocking patterns which partially expose a surface of the phase shift layer. An extension defect or a bridge defect is detected. A photoresist layer, which does not react to light, is formed on a resulting structure including the detected defect. The extension defect is removed by performing a repair process on the light blocking patterns. The bridge defect is removed by etching using the light blocking patterns as a mask.

Abstract: Provided are a method and apparatus for inspecting mask defects. The method may include preparing a mask with a defect inspecting pattern, formed on a transparent substrate. The method may further include preparing a wafer defect inspecting apparatus including a defect inspecting unit capable of detecting defects through radiating light on a surface of a mask and obtaining an image based on reflected light, and a mask stage on which the mask is mounted facing the defect inspecting unit. The mask stage may replace the wafer stage of a wafer defect inspecting apparatus, and the mask stage may support the mask at a surface height substantially equal to a surface height of the wafer mounted on the wafer stage. The method may also include mounting the mask on the mask stage and detecting mask defects through operating the defect inspecting unit to radiate light on a surface of the mask and obtain an image based on reflected light.