Abstract: A cathode active material with controlled rheological properties for lithium secondary batteries. In particular, the cathode active material for a lithium secondary battery includes: a core part comprising a lithium metal oxide; and a coating layer covering at least a portion of a surface of the core part and comprising an inorganic compound.

Abstract: A reinforced composite membrane with improved ion conductivity and wettability is provided. Provided in one embodiment of the present disclosure is a reinforced composite membrane comprising a porous support and an ionomer layer, which comprises an ion conductor filling the pores inside the porous support, wherein the porous support comprises a first surface and a second surface opposite to the first surface, and the first surface is reformed to contain a first hydrophilic functional group.

Abstract: A method of managing identification information of a drone may include: generating an access message, wherein the access message includes an identifier for the ground identification device, which is a transmitter, an identifier for a receiver, an execution function command for classifying and defining a function to be performed, a serial number for transmitting information sequentially and retransmitting the information when transmission fails, data size information for informing a size of data to be transmitted, and transmission data; and transmitting the access message to an integrated management system corresponding to the identifier for the receiver.

Abstract: A D2D scheduling method in a UAV-based IoT network includes: (a) acquiring a geographical map for all transmission links of a D2D network within a network coverage area; (b) applying the geographical map to a sparse convolution model to extract a feature map; (c) defining the feature map for a time slot t as a state St, and then inputting the feature map to actor and critic networks of a reinforcement learning-based scheduling policy learning model, respectively, and selecting a scheduling decision At for the D2D transmission link based on a scheduling output of the actor network and a greedy strategy; and (d) transmitting the scheduling decision At to the D2D network and then receiving reward when the scheduling decision At is applied by the D2D network, wherein the reward is calculated as a total achievable transmission rate.

Abstract: The present invention provides a surface acoustic wave filter with a mass addition film formed on a plurality of electrodes. The surface acoustic wave filter includes a substrate on which a support substrate, an energy confinement layer, and a piezoelectric layer are sequentially stacked; first and second bus bars extended in a first direction on the substrate and spaced apart from each other in a second direction perpendicular to the first direction; a plurality of IDT electrodes alternately extended from the first and second bus bars in the second direction and spaced apart from each other in the first direction; and a mass addition film extended in the first direction to cover the top surface of the plurality of IDT electrodes and the top surface of the substrate exposed between the plurality of IDT electrodes.

Abstract: An extreme ultra violet (EUV) mask is disclosed, which prevents defects from shot overlap encountered in wafer exposure as well as reflection of unnecessary EUV and DUV generated in a black border region, such that a pattern CD is reduced and defects are not created. The EUV mask includes a quartz substrate, a multi-layered reflection film formed over the quartz substrate to reflect exposure light, an absorption layer formed over the multi-layered reflection film, a black border region formed over the quartz substrate that does not include the multi-layered reflection film, and a blind layer formed in a position including at least one of over the absorption layer, over the quartz substrate, and below the quartz substrate.

Abstract: A method for forming a photomask includes detecting a defect of the photomask which has a mirror layer formed on a first surface of a substrate, and forming a recess groove on a first layer which is formed on a second surface of the substrate, wherein the coordinate of the recess groove corresponds to the coordinate of the defect.

Abstract: An EUV mask comprises a multi-reflecting layer is formed over a substrate and reflecting EUV light; an absorber layer pattern defining a sidewall formed over the multi-reflecting layer formed and selectively exposing a region of the multi-reflecting layer; and a reflecting spacer which additionally reflects the EUV light at the sidewall of the absorber layer pattern.

Abstract: A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.

Abstract: A method for correcting an image placement error in a photomask includes, forming a photomask including a light absorbing layer formed on a frame region of a substrate and a mask pattern formed on a field region inside the frame region, measuring a first registration error of the photomask, and etching a portion of the light absorbing layer on the frame region to induce a second registration error for compensating the first registration error.

Abstract: A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.

Abstract: A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern.

Abstract: A method for fabricating a photomask for extreme ultraviolet lithography is provided. A reflection layer reflecting extreme ultraviolet light is formed over a transparent substrate having a main chip region and a frame region. A phase shifter pattern is formed over the reflection layer to selectively expose the reflection layer. An absorber pattern is formed over the phase shifter pattern of the frame region. A reflectivity reduction region guiding the shielding of the extreme ultraviolet light is formed in the absorber pattern.

Abstract: In a method of fabricating a mask for a semiconductor device, a phase shift layer and a light blocking layer are formed on a transparent substrate. The light blocking layer is patterned to form light blocking patterns which partially expose a surface of the phase shift layer. An extension defect or a bridge defect is detected. A photoresist layer, which does not react to light, is formed on a resulting structure including the detected defect. The extension defect is removed by performing a repair process on the light blocking patterns. The bridge defect is removed by etching using the light blocking patterns as a mask.

Abstract: Provided are a method and apparatus for inspecting mask defects. The method may include preparing a mask with a defect inspecting pattern, formed on a transparent substrate. The method may further include preparing a wafer defect inspecting apparatus including a defect inspecting unit capable of detecting defects through radiating light on a surface of a mask and obtaining an image based on reflected light, and a mask stage on which the mask is mounted facing the defect inspecting unit. The mask stage may replace the wafer stage of a wafer defect inspecting apparatus, and the mask stage may support the mask at a surface height substantially equal to a surface height of the wafer mounted on the wafer stage. The method may also include mounting the mask on the mask stage and detecting mask defects through operating the defect inspecting unit to radiate light on a surface of the mask and obtain an image based on reflected light.

Abstract: A mask includes mask patterns formed over a frontside of a substrate and a phase grating formed over a backside of the substrate. The mask patterns correspond to a layout of diagonal patterns extending in a direction rotated toward a predetermined direction from an axis of a rectangular coordinate system. The phase grating extends in a direction parallel to the extending direction of the mask patterns. The phase grating includes first and second phase regions alternately arranged over the backside of the substrate with a phase difference of 180° therebetween. The first and second phase regions induce a phase interference that blocks a zero-order light of an exposure light incident to the substrate and allows a primary light to be incident to the mask patterns.

Abstract: A method for fabricating an extreme ultraviolet (EUV) lithography mask comprises forming a reflecting layer, an absorber layer, and a resist layer over a substrate; defining a plurality of split regions by partially splitting the resist layer with regular spacing; performing an exposure process, wherein the exposure region is irradiated with an electron beam at different intensities on the split regions to generate a difference in electron beam doses implanted into the resist layer; forming a resist layer pattern which selectively exposes the absorber layer and has a slanted side wall profile by performing a development process to remove a portion of the resist layer, into which the electron beam doses are implanted; and forming an absorber layer pattern with a slanted side wall profile by sequentially etching the portion of the absorber layer exposed by the resist layer pattern.

Abstract: An EUV mask comprises a multi-reflecting layer is formed over a substrate and reflecting EUV light; an absorber layer pattern defining a sidewall formed over the multi-reflecting layer formed and selectively exposing a region of the multi-reflecting layer; and a reflecting spacer which additionally reflects the EUV light at the sidewall of the absorber layer pattern.

Abstract: In a method of fabricating a mask for a semiconductor device, a phase shift layer and a light blocking layer are formed on a transparent substrate. The light blocking layer is patterned to form light blocking patterns which partially expose a surface of the phase shift layer. An extension defect or a bridge defect is detected. A photoresist layer, which does not react to light, is formed on a resulting structure including the detected defect. The extension defect is removed by performing a repair process on the light blocking patterns. The bridge defect is removed by etching using the light blocking patterns as a mask.

Abstract: Provided are a method and apparatus for inspecting mask defects. The method may include preparing a mask with a defect inspecting pattern, formed on a transparent substrate. The method may further include preparing a wafer defect inspecting apparatus including a defect inspecting unit capable of detecting defects through radiating light on a surface of a mask and obtaining an image based on reflected light, and a mask stage on which the mask is mounted facing the defect inspecting unit. The mask stage may replace the wafer stage of a wafer defect inspecting apparatus, and the mask stage may support the mask at a surface height substantially equal to a surface height of the wafer mounted on the wafer stage. The method may also include mounting the mask on the mask stage and detecting mask defects through operating the defect inspecting unit to radiate light on a surface of the mask and obtain an image based on reflected light.