Patents by Inventor Sung-hyun SIM

Sung-hyun SIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190221730
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Application
    Filed: March 22, 2019
    Publication date: July 18, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Ha-nul Yoo, Yong-il Kim, Nam-goo Cha, Wan-tae Lim, Kyung-wook Hwang, Sung-hyun Sim, Hye-seok Noh
  • Patent number: 10333035
    Abstract: A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions and one or more wavelength conversion regions, preparing light emitting devices, each including one or more light emitting regions, bonding the film strip to the light emitting devices so as to dispose the one or more wavelength conversion regions on the one or more light emitting regions of each of the light emitting devices, and cutting the film strip and the light emitting devices into individual device units.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: June 25, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Sung Hyun Sim, Wan tae Lim, Hye Seok Noh, Hanul Yoo
  • Publication number: 20190189595
    Abstract: A light emitting device package includes a first wavelength conversion portion and a second wavelength conversion portion to provide a wavelength of incident light to provide light having a converted wavelength, a light-transmissive partition structure extending along side surfaces of the first and second wavelength conversion portions along a thickness direction to separate the first and second wavelength conversion portions part from each other along a direction crossing the thickness direction, and a cell array including a first light emitting device, a second light emitting device and a third light emitting device, overlapping the first wavelength conversion portion, the second wavelength conversion portion and the light-transmissive partition structure, respectively, along the thickness direction.
    Type: Application
    Filed: June 14, 2018
    Publication date: June 20, 2019
    Inventors: Dong Gun LEE, Yong Il KIM, Hye Seok NOH, Han Kyu SEONG, Sung Hyun SIM, Ha Nul YOO
  • Publication number: 20190189853
    Abstract: A light emitting device package comprises a light emitting cell array including a first light emitting cell, a second light emitting cell, and a third light emitting cell, and including a first surface, and a second surface, disposed to oppose the first surface; a plurality of metal pillars disposed on the first surface of the light emitting cell array and electrically connected to the first light emitting cell, the second light emitting cell, and the third light emitting cell; and a molding portion encapsulating the light emitting cell array and the plurality of metal pillars, wherein the plurality of metal pillars include a conductive layer and a bonding layer disposed below the conductive layer, and an interface between the bonding layer and the conductive layer is higher than a lower surface of the molding portion.
    Type: Application
    Filed: June 19, 2018
    Publication date: June 20, 2019
    Inventors: Hanul YOO, Sung Hyun SIM, Ji Hye YEON, Yong Il KIM, Dong Gun LEE
  • Patent number: 10326061
    Abstract: A method of fabricating a light emitting device package includes forming a plurality of semiconductor light emitting parts, each having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a growth substrate, forming a partition structure having a plurality of light emitting windows on the growth substrate, filling each of the plurality of light emitting windows with a resin having a phosphor, and forming a plurality of wavelength conversion parts by planarizing a surface of the resin.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: June 18, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Wan Tae Lim, Sung Hyun Sim, Hanul Yoo, Yong Il Kim, Hye Seok Noh, Ji Hye Yeon
  • Publication number: 20190181181
    Abstract: A method of fabricating a light emitting device package including forming a cell array that includes semiconductor light-emitters including first and second conductivity-type semiconductor layers and an active layer on a substrate, and a separation region, the cell array having a first surface contacting the substrate; exposing the first surface of the separation region by removing the substrate; forming a seed layer on the first surface in the separation region; forming a photoresist pattern on the light-emitters such that the photoresist pattern exposes the seed layer; forming a partition structure that separates the light-emitters by plating a region exposed by the photoresist pattern; forming light emitting windows of the partition structure by removing the photoresist pattern such that the light-emitters are exposed at lower ends of the light emitting windows; and forming wavelength converters by filling the light emitting windows with a wavelength conversion material.
    Type: Application
    Filed: May 30, 2018
    Publication date: June 13, 2019
    Inventors: Ji Hye YEON, Sung Hyun SIM, Ha Nul YOO, Dong Gun LEE
  • Publication number: 20190149820
    Abstract: The present invention relates to an apparatus and method for encoding and decoding an image by skip encoding. The image-encoding method by skip encoding, which performs intra-prediction, comprises: performing a filtering operation on the signal which is reconstructed prior to an encoding object signal in an encoding object image; using the filtered reconstructed signal to generate a prediction signal for the encoding object signal; setting the generated prediction signal as a reconstruction signal for the encoding object signal; and not encoding the residual signal which can be generated on the basis of the difference between the encoding object signal and the prediction signal, thereby performing skip encoding on the encoding object signal.
    Type: Application
    Filed: January 10, 2019
    Publication date: May 16, 2019
    Applicants: Electronics and Telecommunications Research Institute, Kwangwoon University Industry-Academic Collaborati on Foundation, University-Industry Cooperation Group of Kyung Hee University
    Inventors: Sung Chang LIM, Ha Hyun LEE, Se Yoon JEONG, Hui Yong KIM, Suk Hee CHO, Jong Ho KIM, Jin Ho LEE, Jin Soo CHOI, Jin Woong KIM, Chie Teuk AHN, Dong Gyu SIM, Seoung Jun OH, Gwang Hoon PARK, Sea Nae PARK, Chan Woong JEON
  • Publication number: 20190103510
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Application
    Filed: November 14, 2018
    Publication date: April 4, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Yong Il KIM, Young Soo PARK, Sung Hyun SIM, Hanul YOO
  • Patent number: 10243123
    Abstract: A light-emitting diode (LED) package includes a light-emitting structure, an optical wavelength conversion layer on the light-emitting structure, and an optical filter layer on the optical wavelength conversion layer. The light-emitting structure includes a first-conductivity-type semiconductor layer, an active layer on the first-conductivity-type semiconductor layer, and a second-conductivity-type semiconductor layer on the active layer, and emits first light having a first peak wavelength. The optical wavelength conversion layer absorbs the first light emitted from the light-emitting structure and emits second light having a second peak wavelength different from the first peak wavelength. The optical filter layer reflects the first light emitted from the light-emitting structure and transmits the second light emitted from the optical wavelength conversion layer.
    Type: Grant
    Filed: September 14, 2017
    Date of Patent: March 26, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-nul Yoo, Yong-il Kim, Nam-goo Cha, Wan-tae Lim, Kyung-wook Hwang, Sung-hyun Sim, Hye-seok Noh
  • Patent number: 10217914
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent sup
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: February 26, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Wan Tae Lim, Yong Il Kim, Hye Seok Noh, Eun Joo Shin, Sung Hyun Sim, Hanul Yoo
  • Patent number: 10170666
    Abstract: An LED light source module includes a light emitting stacked body, and a first through electrode structure and a second through electrode structure passing through a portion of the light emitting stacked body. The light emitting stacked body includes a base insulating layer, light emitting layers sequentially stacked on the base insulating layer, each of the light emitting layers including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and an interlayer insulating layer disposed between the light emitting layers. The first through electrode structure is connected to the first conductivity-type semiconductor layer of each of the light emitting layers, and the second through electrode structure is connected to any one or any combination of the second conductivity-type semiconductor layer of each of the light emitting layers.
    Type: Grant
    Filed: December 23, 2016
    Date of Patent: January 1, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo Cha, Yong Il Kim, Young Soo Park, Sung Hyun Sim, Hanul Yoo
  • Publication number: 20180374738
    Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.
    Type: Application
    Filed: January 12, 2018
    Publication date: December 27, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Sub LEE, Han Kyu SEONG, Yong II KIM, Sung Hyun SIM, Dong gun LEE
  • Patent number: 10103301
    Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
    Type: Grant
    Filed: June 8, 2017
    Date of Patent: October 16, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hanul Yoo, Yong Il Kim, Sung Hyun Sim, Wan Tae Lim, Hye Seok Noh, Ji Hye Yeon
  • Publication number: 20180286915
    Abstract: A semiconductor light emitting device includes a plurality of light emitting cells including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first and second conductivity type semiconductor layers, an insulating layer on the plurality of light emitting cells and having a first opening and a second opening defining a first contact region of the first conductivity type semiconductor layer and a second contact region of the second conductivity type semiconductor layer, respectively, in each of the plurality of light emitting cells, a connection electrode on the insulating layer and connecting the first contact region and the second contact region to electrically connect the plurality of light emitting cells to each other, a transparent support substrate on the insulating layer and the connection electrode, and a transparent bonding layer between the insulating layer and the transparent support substrate.
    Type: Application
    Filed: October 20, 2017
    Publication date: October 4, 2018
    Inventors: Ji Hye YEON, Han Kyu SEONG, Wan Tae LIM, Sung Hyun SIM, Hanul YOO
  • Publication number: 20180269192
    Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other.
    Type: Application
    Filed: May 4, 2018
    Publication date: September 20, 2018
    Inventors: YONG IL KIM, Wan Tae LIM, Young Jin CHOI, Sung Hyun SIM
  • Publication number: 20180261738
    Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively providing a first surface and a second surface, opposite to each other, of the light emitting structure, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a region of the first conductivity-type semiconductor layer being open toward the second surface, and the first surface having a concavo-convex portion disposed thereon; a first electrode and a second electrode disposed on the region of the first conductivity-type semiconductor layer and a region of the second conductivity-type semiconductor layer, respectively; a transparent support substrate disposed on the first surface of the light emitting structure; and a transparent adhesive layer disposed between the first surface of the light emitting structure and the transparent sup
    Type: Application
    Filed: May 8, 2018
    Publication date: September 13, 2018
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Nam Goo CHA, Wan Tae LIM, Yong II KIM, Hye Seok NOH, Eun Joo SHIN, Sung Hyun SIM, Hanul YOO
  • Publication number: 20180211993
    Abstract: A light emitting device package includes a substrate for growth having a plurality of light-emitting windows, a plurality of semiconductor light-emitting units corresponding to the plurality of light-emitting windows, each semiconductor light-emitting unit having a first surface contacting the substrate for growth and a second surface opposite the first surface, and each semiconductor light-emitting unit having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked on each other, a plurality of wavelength conversion units respectively disposed inside the plurality of light-emitting windows, each wavelength conversion unit is configured to provide light having a wavelength different from light emitted by the respective semiconductor light-emitting unit, a metal support layer disposed on at least one surface of each of the plurality of semiconductor light-emitting units and having a lateral surface coplanar with a lateral surface of the substra
    Type: Application
    Filed: March 23, 2018
    Publication date: July 26, 2018
    Inventors: Ji Hye YEON, Sung Hyun SIM, Wan Tae LIM, Yong Il KIM, Hanul YOO
  • Publication number: 20180175261
    Abstract: A semiconductor light emitting device includes a light-transmissive support having a first surface including a first region and a second region surrounding the first region, and a second surface opposing the first surface, and including a wavelength conversion material, a semiconductor stack disposed above the first region of the first surface of the light-transmissive support, and including first and second conductivity-type semiconductor layers and an active layer disposed therebetween, a light-transmitting bonding layer disposed between the light-transmissive support and the semiconductor stack, a light blocking film disposed above the second region of the light-transmissive support to surround the semiconductor stack, and first and second electrodes respectively disposed on portions of the first and second conductivity-type semiconductor layers.
    Type: Application
    Filed: June 8, 2017
    Publication date: June 21, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hanul Yoo, Yong ll Kim, Sung Hyun Sim, Wan Tae Lim, Hye Seok Noh, Ji Hye Yeon
  • Publication number: 20180166424
    Abstract: A light-emitting diode (LED) device includes a plurality of light-emitting structures spaced apart from each other; a plurality of electrode layers on first surfaces of the plurality of light-emitting structures, respectively; a protection layer on second surfaces of each of the plurality of light-emitting structures, respectively; a separation layer to electrically insulate the plurality of light-emitting structures from each other and electrically insulate the plurality of electrode layers from each other; a plurality of phosphor layers on second surfaces of the plurality of light-emitting structures, respectively, each of the plurality of the phosphor layers each to output a different color of light; and a partitioning layer between the phosphor layers and separating the plurality of phosphor layers from each other, the partitioning layer including a substrate structure, an insulation structure, or a metal structure.
    Type: Application
    Filed: December 6, 2017
    Publication date: June 14, 2018
    Inventors: Sung-hyun Sim, Yong-il Kim, Wan-tae Lim, Ji-hye Yeon, Ha-nul Yoo
  • Patent number: 9966369
    Abstract: A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: May 8, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Il Kim, Wan Tae Lim, Young Jin Choi, Sung Hyun Sim