Abstract: The present invention relates to a composition for preventing or treating transplantation rejection or a transplantation rejection disease, comprising a novel compound and a calcineurin inhibitor. A co-administration of the present invention 1) reduces the activity of pathogenic Th1 cells or Th17 cells, 2) increases the activity of Treg cells, 3) has an inhibitory effect against side effects, such as tissue damage, occurring in the sole administration thereof, 4) inhibits various pathogenic pathways, 5) inhibits the cell death of inflammatory cells, and 6) increases the activity of mitochondria, in an in vivo or in vitro allogenic model, a transplantation rejection disease model, a skin transplantation model, and a liver-transplanted patient, and thus inhibits transplantation rejection along with mitigating side effects possibly occurring in the administration of a conventional immunosuppressant alone.

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

Abstract: A negative voltage switching device includes a first switching circuit configured to transmit a first negative voltage, a second switching circuit configured to transmit a second negative voltage, and a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal.

Abstract: A gas safety device is provided. An electronic valve connected to a thermocouple is closed to cut off the gas supply when the temperature of radiant heat directly emitted from a surface of a vessel exceeds a preset temperature level while the vessel is heated through the spark ignition of a burner, thereby preventing risks of overheating and thus fire caused due to a user's carelessness when the user cooks the food.

Abstract: A gas safety device is provided. An electronic valve connected to a thermocouple is closed to cut off the gas supply when the temperature of radiant heat directly emitted from a surface of a vessel exceeds a preset temperature level while the vessel is heated through the spark ignition of a burner, thereby preventing risks of overheating and thus fire caused due to a user's carelessness when the user cooks the food.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: A backside illuminated image sensor includes a photodiode, formed below the top surface of a semiconductor substrate, for receiving light illuminated from the backside of the semiconductor substrate to generate photoelectric charges, a reflecting gate, formed on the photodiode over the front upper surface of the semiconductor substrate, for reflecting light illuminated from the backside of the substrate and receiving a bias to control a depletion region of the photodiode, and a transfer gate for transferring photoelectric charges from the photodiode to a sensing node of a pixel.

Abstract: Disclosed herein is a method of improving residue and thermal characteristics of a semiconductor device. The method comprises the steps of a) depositing nickel and cobalt layers sequentially on a silicone substrate having a transistor formed thereon, b) depositing a capping layer on the cobalt layer, c) forming a silicide layer from the cobalt and nickel layers deposited on the silicone substrate by heat treatment, and d) wet etching to remove a residue. As the silicide layer is formed by additionally deposing the capping layer of titanium nitride on triple layers of silicone, cobalt and nickel, thermal stability for a thermal process performed when forming the silicide is ensured, and as resistance caused by an etchant is eliminated by the subsequent etching process, the residue is completely removed.

Abstract: Disclosed herein is a method of improving residue and thermal characteristics of a semiconductor device. The method comprises the steps of a) depositing nickel and cobalt layers sequentially on a silicone substrate having a transistor formed thereon, b) depositing a capping layer on the cobalt layer, c) forming a silicide layer from the cobalt and nickel layers deposited on the silicone substrate by heat treatment, and d) wet etching to remove a residue. As the silicide layer is formed by additionally deposing the capping layer of titanium nitride on triple layers of silicone, cobalt and nickel, thermal stability for a thermal process performed when forming the silicide is ensured, and as resistance caused by an etchant is eliminated by the subsequent etching process, the residue is completely removed.

Abstract: Disclosed herein is a method of manufacturing a semiconductor device. The method comprises the steps of a) depositing nickel and cobalt layers sequentially on a silicone substrate having a transistor formed thereon, b) forming a silicide layer from the nickel and cobalt layers deposited on the silicone substrate by a rapid thermal process, and c) annealing and wet-etching the semiconductor device obtained in the step b). As the double layers of nickel/cobalt are formed, a resistance difference between N-polysilicone and P-polysilicone is lowered, and thermal stability during a subsequent heat treatment process after forming the silicide is enhanced.