Abstract: A compound of Chemical Formula 1, and an organic photoelectric device, an image sensor, and an electronic device including the same are disclosed: In Chemical Formula 1, the definition of each group and parameter is as described in the detailed description.

Abstract: Provided is a diaphragm pump. The diaphragm pump operates such that a viscous liquid is discharged by transferring a pressing force via a diaphragm that is elastically deformed. The diaphragm pump has a structure capable of rapidly and accurately discharging the viscous liquid of high viscosity by using a diaphragm. Also, the diaphragm pump is capable of effectively pressing the viscous liquid while preventing the damage to the particles contained in the viscous liquid, by preventing the mechanical structure pressing the viscous liquid from coming into direct contact with the viscous liquid.

Abstract: Disclosed is an amplification circuit, which includes a first amplifier that receives an external signal and performs first band pass filtering on the external signal to output a first filter signal, and a second amplifier that receives the first filter signal and performs second band pass filtering on the first filter signal to output a second filter signal, and a frequency pass bandwidth of the second band pass filtering is narrower than a frequency pass bandwidth of the first band pass filtering.

Abstract: A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.

Abstract: A method for controlling driving of a hybrid electric vehicle includes collecting driving data while the hybrid electric vehicle is driven, determining whether the hybrid electric vehicle enters a first mode corresponding to emergency driving of the hybrid electric vehicle or a second mode corresponding to control in preparation for the emergency driving, and controlling the hybrid electric vehicle in accordance with a mode that the hybrid electric vehicle enters among the first mode and the second mode.

Abstract: A hybrid communication device, an operation method thereof, and a communication system including the same are provided. The hybrid communication device includes a contact unit that includes an antenna for receiving a first communication signal and an electrode for receiving a second signal, a switch controller that includes a first switch and a second switch and controls the first switch and the second switch based on a change in capacitance of the electrode, and a signal processing unit that receives at least one of the first communication signal and the second communication signal from the contact unit via the first switch and processes the received signal. The first switch is connected to the contact unit, and the signal processing unit is connected to the first switch.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: An adhesive-type insect trap includes a body having a hole for insertion of an adhesive sheet; a light source mounting unit disposed on the body; and a cover which is detachably mounted on the body and has a through-hole in at least a part thereof, and an adhesive sheet including a sticky substance and a sheet. The body includes a guide unit by which the adhesive sheet is guided, and the cover comprises a light refraction unit therein or on a surface thereof.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: An adhesive-type insect trap includes a main body having an adhesive sheet insertion hole; a light source mounting unit disposed on the main body; a cover which is detachably mounted on the main body and has a through-hole in at least a part thereof; an adhesive sheet including a sticky substance and a sheet. The main body includes a guide unit by which the adhesive sheet is guided, and an adhesive sheet support unit for supporting the adhesive sheet.

Abstract: A metaverse autonomous driving system includes a vehicle server that receives camera image signals and a GPS signal, displays a metaverse autonomous driving image, and controls a vehicle in an autonomous driving state, a camera image input device that receives and provides image signals from cameras on the vehicle to the vehicle server in real time, a GPS input device that provides current GPS position information of the vehicle to the vehicle server in real time, a display that provides an I/O interface so that a driver can give an instruction for autonomous driving through a metaverse image, an ECU that operates a vehicle controller on the basis of an autonomous driving control instruction transmitted from the vehicle server, the vehicle controller that controls the vehicle on the basis of the control instruction, and a communication device that wirelessly communicates with other vehicles equipped with the metaverse autonomous driving system.

Abstract: A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode, a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode, and a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor.

Abstract: There is provided a semiconductor device having reduced contact resistance and enhanced performance. The semiconductor device includes a substrate, a first active pattern spaced apart from the substrate and extending in a first direction, and including a first two-dimensional semiconductor material, a first gate electrode extending in a second direction intersecting the first direction on the substrate, and through which the first active pattern penetrates, and a first source/drain contact which includes a first contact insertion film and a first filling metal film sequentially stacked on a side surface of the first gate electrode, and is connected to the first active pattern, wherein the first contact insertion film at least partially surrounds a lower surface, a side surface and an upper surface of an end portion of the first active pattern, and the first active pattern and the first contact insertion film form an ohmic contact.

Abstract: A spray pump formed to atomize and apply a viscous liquid may micro-discharge the viscous liquid ranging from low to high viscosity in a quantitative manner, may miniaturize a device capable of atomizing liquids by spraying, and may shorten a spraying path to prevent changes in liquid properties and keep spraying quality constant.

Abstract: The present specification relates to a composition for external application to skin with improved solubility and feeling during use, comprising a benzoic acid amide compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solute that is a solvate thereof, and a first cyclodextrin solubilizing agent.

Abstract: A semiconductor device is provided. The semiconductor device includes: lower nanosheets; upper nanosheets on the lower nanosheets; gate electrodes on the substrate and provided around each of the nanosheets; a first lower source/drain region on a first side of the first and second gate electrodes; a second lower source/drain region on a second side of the first and second gate electrodes; a first upper source/drain region on the first lower source/drain region; and a second upper source/drain region on the second lower source/drain region. A first length of the second lower source/drain region is greater than a second length of the second upper source/drain region.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first active pattern extending in a first direction; a second active pattern spaced apart extending in the first direction, the first active pattern being provided between the second active pattern and a substrate; a gate structure extending in a second direction, the first active pattern and the second active pattern passing through the gate structure, and the second direction crossing the first direction; a first source/drain area connected with the first active pattern and provided on a side of the gate structure; a second source/drain area connected with the second active pattern and provided on the first source/drain area; a first insulating structure provided between the substrate and the first source/drain area, the first insulating structure not being provided between the substrate and the gate structure; and a second insulating structure provided between the first source/drain area and the second source/drain area.

Abstract: A semiconductor memory device and a method for manufacturing the same. The semiconductor memory device may include a substrate, a first lower wire pattern and a first upper wire pattern stacked on the substrate, and spaced apart from each other; a second lower wire pattern and a second upper wire pattern stacked on the substrate, spaced apart from each other, and spaced apart from the first lower and upper wire patterns; a first gate line surrounding the first lower wire pattern and the first upper wire pattern; a second gate line surrounding the second lower wire pattern and the second upper wire pattern and spaced apart from the first gate line; a first lower source/drain area; a first upper source/drain area; and a first overlapping contact that electrically connects the first lower source/drain area, the first upper source/drain area and the second gate line to each other.

Abstract: A semiconductor device comprises a substrate, a first active pattern on the substrate and extending in a first direction, a second active pattern extending in the first direction spaced apart from the substrate, a gate electrode extending in a second direction surrounding the first and second active patterns, and a high dielectric film between the first and second active patterns and the gate electrode. The gate electrode includes first and second work function adjusting films surrounding the high dielectric film on the first and second active patterns, and a filling conductive film surrounding the first and second work function adjusting films. The first and second work function adjusting films include first and second work function conductive films, each of which includes a first metal film. A thickness of the first metal film of the first work function conductive film is greater than that of the second work function conductive film.

Abstract: In an embodiment, the present disclosure pertains to an organ-specific wireless optogenetic device. In some embodiments, the device includes an electronic circuit, such that the electronic circuit is configured to harvest and convert radio frequency (RF) energy into optical energy and a tether having a ?LED, where the ?LED illuminates targeted regions in the organ. In an additional embodiment, the present disclosure pertains to a method of treating obesity. In general, the method includes implanting an organ-specific wireless optogenetic device into a subject, activating an RF-power system to produce RF energy, harvesting, by the organ-specific wireless optogenetic device, the RF energy, converting, by the organ-specific wireless optogenetic device, the RF energy into optical energy, illuminating, by the ?LED, targeted regions in the stomach of the subject, and stimulating nerve endings to thereby suppress appetite in the subject.