Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: A binder includes composite particles with a polytetrafluoroethylene structure coated with an acrylic polymer. The binder can be for a lithium secondary battery according to one embodiment of the present invention, and not only can solve problems such as agglomeration that can occur when handling conventional binders, but also has excellent physical properties such as low thickness deviation and high tensile strength when manufacturing electrodes. In addition, a battery with these electrodes has improved performance, such as improved capacity retention rate.

Abstract: An integrated circuit (IC) device includes a first region and a second region adjacent to each other along a first direction on a substrate, fin patterns in each of the first and second regions extending along a second direction perpendicular to the first direction; gate electrodes extending along the first direction and intersecting the fin patterns; and an isolation region between the first and second regions, a bottom of the isolation region having a non-uniform height relative to a bottom of the substrate.

Abstract: A semiconductor device includes a first active pattern extending in a first direction, a second active pattern on the first active pattern and extending in the first direction, a gate structure on the first active pattern and the second active pattern and extending in a second direction intersecting the first direction, a first source/drain region on side faces of the gate structure and connected to the first active pattern, a second source/drain region on the side faces of the gate structure and connected to the second active pattern, and an intermediate connecting layer which includes a first intermediate conductive pattern between the first active pattern and the second active pattern, and a second intermediate conductive pattern connected to the first intermediate conductive pattern between the first source/drain region and the second source/drain region.

Abstract: An apparatus for surgical lighting is disclosed. The apparatus includes a light emitting element formed with a light source encapsulated within an outer layer. The outer layer includes a biocompatible material. A power supply is coupled to the light source. The apparatus includes an actuating mechanism that controls power from the power supply to the light source to emit light along a surgical area. The light emitting element provides enhanced illumination and other surgical advantages.

Abstract: In one aspect, a hyperspectral image measurement device is provided to include: a main body; an illumination module disposed in the main body and including LEDs having different peak wavelengths to irradiate light to a subject; a camera disposed on the main body and receiving light reflected from the subject to acquire an image of the subject; a barrel having a contact surface contacting the subject, the contact surface located to be spaced apart from the illumination module and the camera module by a predetermined distance; and a reference cover located on the contact surface and including a standard reflection layer for reflecting light irradiated from the illumination module toward the camera module.

Abstract: Disclosed is a semiconductor device including a first channel layer on a substrate, and a second channel layer on the first channel layer, the first and second channel layers extending in a first direction while being spaced apart from the substrate, and including a 2D semiconductor material, a gate structure on the substrate, the gate structure extending in a second direction, and being penetrated by the first and second channel layers, and source/drain contacts on side surfaces of the gate structure and being connected to the first and second channel layers. The gate structure includes a first gate portion between the substrate and the first channel layer and having a first gate length, a second gate portion between the first and second channel layers and having a second gate length, and a third gate portion on an upper surface of the second channel layer and having a third gate length.

Abstract: A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.

Abstract: Provided is a diaphragm pump. The diaphragm pump operates such that a viscous liquid is discharged by transferring a pressing force via a diaphragm that is elastically deformed. The diaphragm pump has a structure capable of rapidly and accurately discharging the viscous liquid of high viscosity by using a diaphragm. Also, the diaphragm pump is capable of effectively pressing the viscous liquid while preventing the damage to the particles contained in the viscous liquid, by preventing the mechanical structure pressing the viscous liquid from coming into direct contact with the viscous liquid.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: An adhesive-type insect trap includes a body having a hole for insertion of an adhesive sheet; a light source mounting unit disposed on the body; and a cover which is detachably mounted on the body and has a through-hole in at least a part thereof, and an adhesive sheet including a sticky substance and a sheet. The body includes a guide unit by which the adhesive sheet is guided, and the cover comprises a light refraction unit therein or on a surface thereof.

Abstract: A semiconductor device includes a fin type pattern extending in a first direction on a substrate, a first gate electrode extending in a second direction intersecting the first direction on the fin type pattern, a source/drain region on a side wall of the first gate electrode and in the fin type pattern, a separation structure extending in the first direction on the substrate, the separation structure including a first trench and being spaced apart from the fin type pattern and separating the first gate electrode, an interlayer insulating layer on a side wall of the separation structure and covering the source/drain region, the interlayer insulating layer including a second trench having a lower surface lower than a lower surface of the first trench, and a contact connected to the source/drain region and filling the first trench and the second trench.

Abstract: An adhesive-type insect trap includes a main body having an adhesive sheet insertion hole; a light source mounting unit disposed on the main body; a cover which is detachably mounted on the main body and has a through-hole in at least a part thereof; an adhesive sheet including a sticky substance and a sheet. The main body includes a guide unit by which the adhesive sheet is guided, and an adhesive sheet support unit for supporting the adhesive sheet.

Abstract: There is provided a semiconductor device having reduced contact resistance and enhanced performance. The semiconductor device includes a substrate, a first active pattern spaced apart from the substrate and extending in a first direction, and including a first two-dimensional semiconductor material, a first gate electrode extending in a second direction intersecting the first direction on the substrate, and through which the first active pattern penetrates, and a first source/drain contact which includes a first contact insertion film and a first filling metal film sequentially stacked on a side surface of the first gate electrode, and is connected to the first active pattern, wherein the first contact insertion film at least partially surrounds a lower surface, a side surface and an upper surface of an end portion of the first active pattern, and the first active pattern and the first contact insertion film form an ohmic contact.

Abstract: A metaverse autonomous driving system includes a vehicle server that receives camera image signals and a GPS signal, displays a metaverse autonomous driving image, and controls a vehicle in an autonomous driving state, a camera image input device that receives and provides image signals from cameras on the vehicle to the vehicle server in real time, a GPS input device that provides current GPS position information of the vehicle to the vehicle server in real time, a display that provides an I/O interface so that a driver can give an instruction for autonomous driving through a metaverse image, an ECU that operates a vehicle controller on the basis of an autonomous driving control instruction transmitted from the vehicle server, the vehicle controller that controls the vehicle on the basis of the control instruction, and a communication device that wirelessly communicates with other vehicles equipped with the metaverse autonomous driving system.

Abstract: A semiconductor device having high performance and a high degree of integration includes a substrate, a first transistor disposed on the substrate, the first transistor comprising a first active pattern including a first two-dimensional semiconductor material, a first gate electrode through which the first active pattern penetrates, and a first source/drain contact connected to the first active pattern on a side surface of the first gate electrode, a second transistor disposed on an upper surface of the first transistor, the second transistor comprising a second active pattern including a second two-dimensional semiconductor material, a second gate electrode through which the second active pattern penetrates, and a second source/drain contact connected to the second active pattern on a side surface of the second gate electrode, and a first wiring structure interposed between the first transistor and the second transistor, and electrically connecting the first transistor and the second transistor.

Abstract: A spray pump formed to atomize and apply a viscous liquid may micro-discharge the viscous liquid ranging from low to high viscosity in a quantitative manner, may miniaturize a device capable of atomizing liquids by spraying, and may shorten a spraying path to prevent changes in liquid properties and keep spraying quality constant.

Abstract: The present specification relates to a composition for external application to skin with improved solubility and feeling during use, comprising a benzoic acid amide compound, an isomer thereof, a pharmaceutically acceptable salt thereof, a hydrate thereof or a solute that is a solvate thereof, and a first cyclodextrin solubilizing agent.

Abstract: A semiconductor device is provided. The semiconductor device includes: lower nanosheets; upper nanosheets on the lower nanosheets; gate electrodes on the substrate and provided around each of the nanosheets; a first lower source/drain region on a first side of the first and second gate electrodes; a second lower source/drain region on a second side of the first and second gate electrodes; a first upper source/drain region on the first lower source/drain region; and a second upper source/drain region on the second lower source/drain region. A first length of the second lower source/drain region is greater than a second length of the second upper source/drain region.