Abstract: An embodiment multi-way coolant valve includes an outer housing including first to third outer inlets, first to third outer outlets, and a pump mount portion coupled to one of the outer outlets, an inner housing rotatably provided within the outer housing and including penetration holes corresponding to the outer inlets and outlets, a coolant line defined by a selective connection of the penetration holes such that the outer inlets and outlets are selectively connected, pads interposed between an interior circumference of the outer housing and an exterior circumference of the inner housing at locations of the outer inlets and outlets, respectively, and a driving device connected to a rotation center of the inner housing to selectively rotate the inner housing within the outer housing, wherein the inner housing is configured to rotate by a preset interval according to a selected vehicle mode.

Abstract: Disclosed herein is a method for transmitting information using a monitor brightness change. The method may include generating a transmission data frame structure for transmitting digital information, encoding the bit of the digital information, and converting the encoded bit of the digital information into a wireless signal that is a brightness change signal of blue (B) color, among red, green, and blue (RGB) for configuring colors on a monitor.

Abstract: Gate all around semiconductor devices, such as nanowire or nanoribbon devices, are described that include a low dielectric constant (“low-k”) material disposed between a first nanowire closest to the substrate and the substrate. This configuration enables gate control over all surfaces of the nanowires in a channel region of a semiconductor device via the high-k dielectric material, while also preventing leakage current from the first nanowire into the substrate.

Abstract: A capacitor component includes a body, including a dielectric layer and an internal electrode layer, and an external electrode disposed on the body and connected to the internal electrode layer. At least one hole is formed in the internal electrode layer, and a region, containing at least one selected from the group consisting of indium (In) and tin (Sn), is disposed in the hole. A method of manufacturing a capacitor component includes forming a dielectric green sheet, forming a conductive thin film, including a first conductive material and a second conductive material, on the dielectric green sheet, and sintering the conductive thin film to form an internal electrode layer. The internal electrode layer includes the first conductive material, and a region, including the second conductive material, is formed in the internal electrode layer.

Abstract: Disclosed are a vision aid device based on an electrochromic layer that maintains a visibility of light input from an outside and improves a resolution of an image projected to the eyes of a wearer, and vision aid glasses including the same.

Abstract: Disclosed are a display panel and a display device including the same according to an embodiment. A display panel according to the embodiment includes: a display area in which a plurality of first pixels are arranged at a first pixels per inch (PPI); and a sensing area in which a plurality of second pixels are arranged at a second PPI that is lower than the first PPI, wherein the first pixels of the display area and the second pixels of the sensing area are arranged adjacent to each other at a boundary between the display area and the sensing area, the second pixel includes red, green, and blue sub-pixels, and at least one of the red and green sub-pixels of the second pixel is arranged closest to the first pixel.

Abstract: Provided is a novel JAK-specific inhibitor compound and a method for preparing the same. The compound of the provided can exhibit therapeutic effects on a variety of diseases, for example, inflammatory diseases, autoimmune diseases, myeloproliferative diseases, and human cancers due to its ability to regulate signal transduction at the level of JAK kinases. In particular, due to its high selectivity for JAK1, the compound of the provided can exhibit better therapeutic effects on inflammatory diseases and autoimmune diseases at a low dose and with fewer side effects and can be expected to be effective in preventing and treating liver fibrosis.

Abstract: Disclosed is a method for pre-detecting a defective porous polymer substrate for a separator, including selecting a porous polymer substrate having a plurality of pores; observing the selected porous polymer substrate with a scanning electron microscope (SEM) to obtain an image of the porous polymer substrate; quantifying the average value of pore distribution index (PDI); correcting the quantified average value of pore distribution index to obtain the corrected average value of pore distribution index; determining whether or not the corrected average value of pore distribution index is 60 a.u. (arbitrary unit) or less; and classifying the porous polymer substrate as a good product, when the corrected average value of pore distribution index is determined to be 60 a.u. or less, and classifying the porous polymer substrate as a defective product, when the corrected average value of pore distribution index is determined to be larger than 60 a.u.

Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.

Abstract: A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: A storage device includes a printed circuit board (PCB) with attached semiconductor chips, each including a memory, and with at least one wire coupling the plural semiconductor chips, and a breathable case surrounding a top portion and a bottom portion of the printed circuit board. The breathable case includes a first layer disposed on a second layer which is exposed to the printed circuit board. The second layer has smaller pores than the first layer.

Abstract: A display device includes a display panel including a plurality of pixels, a display panel driver, and a zone compensating circuit which divides the display panel into a plurality of unit blocks, obtains load values of input image data for the unit blocks, and generates corrected image data by correcting the input image data based on the load values. Each of the load values corresponds to one of the unit blocks. The display panel driver generates a data signal for displaying an image on the display panel based on the corrected image data. When grayscale values included in the input image data are the same, a luminance of the image displayed on the display panel is decreased moving away from a center of a reference block having a largest load value among the unit blocks based on the corrected image data.

Abstract: An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.

Abstract: A multilayer electronic component includes a body including a plurality of internal electrodes and a dielectric layer disposed between the plurality of internal electrodes; and an external electrode disposed on the body and connected to the plurality of internal electrodes, wherein each of the plurality of internal electrodes includes a plurality of nickel layers, and a heterogeneous material layer provided between the plurality of nickel layers.

Abstract: Gate all around semiconductor devices, such as nanowire or nanoribbon devices, are described that include a low dielectric constant (“low-k”) material disposed between a first nanowire closest to the substrate and the substrate. This configuration enables gate control over all surfaces of the nanowires in a channel region of a semiconductor device via the high-k dielectric material, while also preventing leakage current from the first nanowire into the substrate.

Abstract: Disclosed is a seat adjustment apparatus for a mobility vehicle, in which a seat cushion slides in a forward/rearward direction while moving upward or downward when the seat cushion is tilted, thereby allowing an occupant to take a stable posture. In one aspect, the seat apparatus comprises 1) a fixing bracket fixed to a floor surface; 2) a setting bracket disposed above the fixing bracket and connected to a back frame so that the back frame is rotatable; 3) a guide unit disposed at a front end of the fixing bracket and a front end of the setting bracket; 4) a guide part disposed at a rear end of the fixing bracket and a rear end of the setting bracket; and 5) a drive unit connected to the guide unit.

Abstract: A semiconductor device includes a substrate. A conductive layer is disposed on the substrate and extends in a first direction. An insulating layer is disposed on the conductive layer and exposes at least a portion of the conductive layer through a via hole. The via hole includes a first face extending in a first slope relative to a top face of the conductive layer. A second face extends in a second slope relative to the top face of the conductive layer that is less than the first slope. A redistribution conductive layer includes a first pad area disposed in the via hole. A line area at least partially extends along the first face and the second face. The first face directly contacts the conductive layer. The second face is positioned at a higher level than the first face in a second direction perpendicular to a top face of the substrate.

Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.