Abstract: The invention relates to biodegradable iron alloy-containing compositions for use in preparing medical devices. In addition, biodegradable crystalline and amorphous compositions of the invention exhibit properties that make them suitable for use as medical devices for implantation into a body of a patient. The compositions include elemental iron, and one or more elements selected from manganese, magnesium, zirconium, zinc and calcium. The compositions can be prepared using a high energy milling technique. The resulting compositions and the devices formed therefrom are useful in various surgical procedures, such as but not limited to orthopedic, craniofacial, tracheal, and cardiovascular.

Abstract: Provided is a composition for improving, preventing or treating sleep disorders including a Dendropanax morbifera extract.

Abstract: A semiconductor memory device is provided that includes a bit line on a substrate, a protruded insulating pattern on the bit line, and in a channel trench, first and second channel patterns that extend along sidewalls of the channel trench, and spaced apart from the first channel pattern in the first direction, a channel interfacial layer that extends along the sidewalls of the channel trench, and is in contact with the first channel pattern and the second channel pattern, a first word line between the first channel pattern and the second channel pattern, a second word line between the first channel pattern and the second channel pattern, and is spaced apart from the first word line in the first direction and a first capacitor and a second capacitor, which are electrically connected to the first channel pattern and the second channel pattern.

Abstract: The present disclosure relates to a novel organic light emitting material and an organic light emitting device including the same.

Abstract: The present invention provides a metal organic chemical vapor deposition device and a temperature control method therefor. The device comprises: a chamber; a susceptor which is installed inside the chamber to allow rotation therein, wherein at least one substrate is settled thereon; a plurality of heaters which heat the susceptor, wherein the temperature is independently controlled; a gas sprayer which is positioned in the upper part of the susceptor, and sprays gases of group III and V toward the susceptor; a plurality of temperature detection sensors which are positioned in the upper part of the susceptor, and measure the temperature of heating regions heated by each heater; and a controller which retains temperature setting values necessary for the heating regions, and controls the temperature of the heating regions by comparing sensing temperature values detected by each temperature detection sensor with the setting values necessary for the heating regions.

Abstract: Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.

Abstract: A temperature control method of a chemical vapor deposition device including: a chamber; a susceptor positioned on the inner side of the chamber allowing rotation therein, a wafer stacked on an upper side; a gas supplier disposed on the inner side of the chamber, and sprays gas toward the wafer; a heater disposed on the inner side of the susceptor, and heats the wafer; and a temperature sensor positioned in the chamber, and measures the temperature. The temperature control method includes: (a) calculating the temperature distribution of the susceptor based on a measured value of the temperature sensor, and dividing a section with relatively high temperature as a susceptor section and a section with relatively low temperature as a wafer section from the temperature distribution; and (b) controlling the heater by comparing a reference temperature with the temperature of a selected position of the susceptor section or the wafer section.

Abstract: Provided are a lead-free solder, a solder paste, and a semiconductor device, and more particularly, a lead-free solder that includes Cu in a range from about 0.1 wt % to about 0.8 wt %, Pd in a range from about 0.001 wt % to about 0.1 wt %, Al in a range from about 0.001 wt % to about 0.1 wt %, Si in a range from about 0.001 wt % to about 0.1 wt %, and Sn and inevitable impurities as remainder, a solder paste and a semiconductor device including the lead-free solder. The lead-free solder and the solder paste are environment-friendly and have a high high-temperature stability and high reliability.

Abstract: A tin (Sn)-based solder ball having appropriate characteristics for electronic products and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.3 to 3.0 wt. % silver (Ag), about 0.4 to 0.8 wt. % copper (Cu), about 0.01 to 0.09 wt. % nickel (Ni), about 0.1% to 0.5 wt. % bismuth (Bi), and balance of tin (Sn) and unavoidable impurities.

Abstract: A tin (Sn)-based solder ball and a semiconductor package including the same are provided. The tin-based solder ball includes about 0.2 to 4 wt. % silver (Ag), about 0.1 to 1 wt. % copper (Cu), about 0.001 to 0.3 wt. % aluminum (Al), about 0.001% to 0.1 wt. % germanium (Ge), and balance of tin and unavoidable impurities. The tin-based solder ball has a high oxidation resistance.

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract: The present invention provides a metal organic chemical vapor deposition device and a temperature control method therefor. The device comprises: a chamber; a susceptor which is installed inside the chamber to allow rotation therein, wherein at least one substrate is settled thereon; a plurality of heaters which heat the susceptor, wherein the temperature is independently controlled; a gas sprayer which is positioned in the upper part of the susceptor, and sprays gases of group III and V toward the susceptor; a plurality of temperature detection sensors which are positioned in the upper part of the susceptor, and measure the temperature of heating regions heated by each heater; and a controller which retains temperature setting values necessary for the heating regions, and controls the temperature of the heating regions by comparing sensing temperature values detected by each temperature detection sensor with the setting values necessary for the heating regions.

Abstract: There is a need for a method capable of distinguishing even a temperature difference between a susceptor surface and a wafer surface, and controlling the temperature by reflecting the temperature difference. To accomplish such a purpose, the invention provides a temperature control method of a chemical vapor deposition device that comprises: a chamber; a susceptor which is positioned on the inner side of the chamber to allow rotation therein, wherein a wafer is stacked on an upper side; a gas supplier which is disposed on the inner side of the chamber, and sprays gas toward the wafer; a heater which is disposed on the inner side of the susceptor, and heats the wafer; and a temperature sensor which is positioned in the chamber, and measures the temperature.

Abstract: A method capable of perceiving a temperature difference between a susceptor surface and a wafer surface even without special complicated or high-priced equipment is needed.

Abstract: Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3–30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3–30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.

Abstract: A gold (Au) alloy bonding wire for a semiconductor device is provided. The Au alloy bonding wire is manufactured by adding at least one of polonium (Po), promethium (Pm), thulium (Tm), and boron (B) to high-purity gold of 99.999% or more in an amount of 3-30 parts per million (ppm) by weight and at least one of magnesium (Mg), sodium (Na), vanadium (V), molybdenum (Mo), and technetium (Tc) in an amount of 3-30 ppm by weight to the high-purity gold. In the Au alloy bonding wire, high-temperature reliability after ball bonding is not reduced and damage near a ball neck in forming an ultra low loop of the Au alloy bonding wire can be prevented.