Abstract: Provided are a vehicle driving information providing method and system, the method including: operating in a turning radius control mode by determining a parking situation or a U-turn situation while a vehicle is driving; determining a driving force for each of wheels located on left and right sides of the vehicle according to one predetermined configuration mode, which is set up for an operation in the turning radius control mode, among a plurality of predetermined configuration modes including different target turning radii of the vehicle; and generating and outputting an expected driving path of the vehicle, based on the determined driving force.

Abstract: An electric vehicle and a cruise control method therefore are capable of improving ride comfort by reducing a pitch caused by a road surface deceleration factor. A method of controlling a smart cruise control function includes determining a target speed of a vehicle that is traveling when a road surface deceleration factor in front of the vehicle is detected, entering the road surface deceleration factor while traveling at a constant speed corresponding to the determined target speed, and performing pitch reduction control upon entering the road surface deceleration factor.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A method for providing engine start information for a hybrid electric vehicle includes determining a likelihood of engine start for each of a plurality of reasons for engine start, and displaying a reason for engine start having a highest likelihood of engine start from among the plurality of reasons for engine start and engine start information including the highest likelihood of engine start in consideration of a type of at least one reason for engine start and a level of the likelihood of engine start.

Abstract: Disclosed is a vehicle strut insulator that includes first and second bushes (100 and 200) having different hardness characteristics. The first bush (100) having a relatively high hardness is disposed in a left-right direction of a vehicle that affects the handling performance, and the second bush (200) having a relatively low hardness is disposed in a forward-backward direction of the vehicle that affects the ride comfort. Accordingly, the vehicle strut insulator can satisfy both requirements for handling performance, ride comfort and road noise performance.

Abstract: Disclosed is a method of controlling a hybrid electric vehicle having a transmission, an engine, and first and second drive motors. The method includes: performing charging through the first drive motor using the power of the engine by engaging an engine clutch disposed between the engine and the first drive motor while a vehicle is stopped with the gear stage shifted to the parking (P) range; turning off the engine and controlling the clutch of the transmission to enter an open state when the gear stage is shifted to the driving (D) range; and commencing movement of the vehicle using the second drive motor alone or using at least one of the first drive motor or the engine together with the second drive motor based on at least one of requested torque, available torque of the second drive motor, or the speed of the first drive motor.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: Disclosed is a method of controlling a hybrid electric vehicle having a transmission, an engine, and first and second drive motors. The method includes: performing charging through the first drive motor using the power of the engine by engaging an engine clutch disposed between the engine and the first drive motor while a vehicle is stopped with the gear stage shifted to the parking (P) range; turning off the engine and controlling the clutch of the transmission to enter an open state when the gear stage is shifted to the driving (D) range; and commencing movement of the vehicle using the second drive motor alone or using at least one of the first drive motor or the engine together with the second drive motor based on at least one of requested torque, available torque of the second drive motor, or the speed of the first drive motor.

Abstract: A method for providing engine start information for a hybrid electric vehicle includes determining a likelihood of engine start for each of a plurality of reasons for engine start, and displaying a reason for engine start having a highest likelihood of engine start from among the plurality of reasons for engine start and engine start information including the highest likelihood of engine start in consideration of a type of at least one reason for engine start and a level of the likelihood of engine start.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A power amplification apparatus includes a multiple output bias voltage generation unit, a dynamic bias modulator, and a power amplifier. The multiple output bias voltage generation unit generates first and second bias voltages using an inductor coupled between an input voltage and a plurality of capacitors. The capacitors are connected to the inductor in a non-overlapping manner. The dynamic bias modulator outputs the first bias voltage or the second bias voltage as a variable bias voltage based on results of comparing voltage of an envelope signal of a radio frequency (RF) signal to an envelope reference voltage. The power amplifier is biased in response to the variable bias voltage, amplifies power of the RF signal, and outputs the amplified RF signal to an antenna.

Abstract: A power amplification apparatus includes a multiple output bias voltage generation unit, a dynamic bias modulator, and a power amplifier. The multiple output bias voltage generation unit generates first and second bias voltages using an inductor coupled between an input voltage and a plurality of capacitors. The capacitors are connected to the inductor in a non-overlapping manner. The dynamic bias modulator outputs the first bias voltage or the second bias voltage as a variable bias voltage based on results of comparing voltage of an envelope signal of a radio frequency (RF) signal to an envelope reference voltage. The power amplifier is biased in response to the variable bias voltage, amplifies power of the RF signal, and outputs the amplified RF signal to an antenna.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.