Abstract: method of controlling torque of a vehicle driving device is provided. The method includes estimating speed of a driving system of a vehicle from vehicle driving information collected from the vehicle and calculating speed difference between actually measured speed of the driving system and the estimated speed of the driving system. A nominal rate limit value is determined according to the vehicle driving information and a required real-time rate correction amount is determined according to the calculated speed difference. A torque command variation is determined based on the determined nominal rate limit value and the determined required real-time rate correction amount. A torque command after correction in a previous control period is corrected by the determined torque command variation to determine a torque command after correction in a current control period.

Abstract: A control system of an autonomous vehicle for performing control for effective calculation by parallelizing operations between a plurality of modules of the autonomous vehicle includes the plurality of modules arranged in the autonomous vehicle and configured to perform a connective operation, and a module scheduling system configured to monitor operations of the plurality of modules, to parallelize the plurality of modules using an additional thread, and to control the plurality of modules to aperiodically operate using a pipelining method, and thus, processing capability per hour of a plurality of modules may be optimized by controlling parallel processing of the plurality of modules, and when an entire logic calculation period is longer than a sensor input period, an error due to delay that occurs in a data processing procedure between the modules is overcome.

Abstract: A semiconductor device may include: a capacitor including a first source electrode, a second source electrode connected in common to a plurality of second access lines, each of the second access lines spaced apart from one another and located on different layers, and a first channel structure located on the first source electrode and penetrating through the plurality of second access lines; and at least one cell string located between a source line and a first access line, the at least one cell string including a second channel structure penetrating through the plurality of second access lines, the plurality of second access lines electrically separated from each other.

Abstract: A deep learning-based MLCC stacked alignment inspection system includes an integrated defect detection unit configured to detect core areas requiring inspection of image data in which a stacked structure is photographed from a semiconductor MLCC chip by using at least one deep learning-based core area detection model, perform segmentation in the detected core areas, determine whether a defect exists according to a standard margin percentage range, and enable defect detection by generating normal and/or defective data based on the determination result, a result analysis unit configured to perform visualization for respective results of the core area detection, segmentation, and defect detection of the integrated defect detection unit, and provide stepwise analysis data for the visualized respective results so as to determine whether to modify corresponding data, and a data storage configured to store the normal and/or defective data, and stepwise analysis data.

Abstract: Provided are a vehicle driving information providing method and system, the method including: operating in a turning radius control mode by determining a parking situation or a U-turn situation while a vehicle is driving; determining a driving force for each of wheels located on left and right sides of the vehicle according to one predetermined configuration mode, which is set up for an operation in the turning radius control mode, among a plurality of predetermined configuration modes including different target turning radii of the vehicle; and generating and outputting an expected driving path of the vehicle, based on the determined driving force.

Abstract: An electric vehicle and a cruise control method therefore are capable of improving ride comfort by reducing a pitch caused by a road surface deceleration factor. A method of controlling a smart cruise control function includes determining a target speed of a vehicle that is traveling when a road surface deceleration factor in front of the vehicle is detected, entering the road surface deceleration factor while traveling at a constant speed corresponding to the determined target speed, and performing pitch reduction control upon entering the road surface deceleration factor.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A method for providing engine start information for a hybrid electric vehicle includes determining a likelihood of engine start for each of a plurality of reasons for engine start, and displaying a reason for engine start having a highest likelihood of engine start from among the plurality of reasons for engine start and engine start information including the highest likelihood of engine start in consideration of a type of at least one reason for engine start and a level of the likelihood of engine start.

Abstract: Disclosed is a vehicle strut insulator that includes first and second bushes (100 and 200) having different hardness characteristics. The first bush (100) having a relatively high hardness is disposed in a left-right direction of a vehicle that affects the handling performance, and the second bush (200) having a relatively low hardness is disposed in a forward-backward direction of the vehicle that affects the ride comfort. Accordingly, the vehicle strut insulator can satisfy both requirements for handling performance, ride comfort and road noise performance.

Abstract: Disclosed is a method of controlling a hybrid electric vehicle having a transmission, an engine, and first and second drive motors. The method includes: performing charging through the first drive motor using the power of the engine by engaging an engine clutch disposed between the engine and the first drive motor while a vehicle is stopped with the gear stage shifted to the parking (P) range; turning off the engine and controlling the clutch of the transmission to enter an open state when the gear stage is shifted to the driving (D) range; and commencing movement of the vehicle using the second drive motor alone or using at least one of the first drive motor or the engine together with the second drive motor based on at least one of requested torque, available torque of the second drive motor, or the speed of the first drive motor.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: Disclosed is a method of controlling a hybrid electric vehicle having a transmission, an engine, and first and second drive motors. The method includes: performing charging through the first drive motor using the power of the engine by engaging an engine clutch disposed between the engine and the first drive motor while a vehicle is stopped with the gear stage shifted to the parking (P) range; turning off the engine and controlling the clutch of the transmission to enter an open state when the gear stage is shifted to the driving (D) range; and commencing movement of the vehicle using the second drive motor alone or using at least one of the first drive motor or the engine together with the second drive motor based on at least one of requested torque, available torque of the second drive motor, or the speed of the first drive motor.

Abstract: A method for providing engine start information for a hybrid electric vehicle includes determining a likelihood of engine start for each of a plurality of reasons for engine start, and displaying a reason for engine start having a highest likelihood of engine start from among the plurality of reasons for engine start and engine start information including the highest likelihood of engine start in consideration of a type of at least one reason for engine start and a level of the likelihood of engine start.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: In one example, an electronic device can comprise (a) a first substrate comprising a first encapsulant extending from the first substrate bottom side to the first substrate top side, and a first substrate interconnect extending from the substrate bottom side to the substrate top side and coated by the first encapsulant, (b) a first electronic component embedded in the first substrate and comprising a first component sidewall coated by the first encapsulant, (c) a second electronic component coupled to the first substrate top side, (d) a first internal interconnect coupling the second electronic component to the first substrate interconnect, and (e) a cover structure on the first substrate and covering the second component sidewall and the first internal interconnect. Other examples and related methods are also disclosed herein.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.

Abstract: A semiconductor device including a relatively thin interposer excluding a through silicon hole and a manufacturing method thereof are provided. The method includes forming an interposer on a dummy substrate. The forming of the interposer includes, forming a dielectric layer on the dummy substrate, forming a pattern and a via on the dielectric layer, and forming a seed layer at the pattern and the via of the dielectric layer and forming a redistribution layer and a conductive via on the seed layer. A semiconductor die is connected with the conductive via facing an upper portion of the interposer, and the semiconductor die is encapsulated with an encapsulant. The dummy substrate is removed from the interposer. A bump is connected with the conductive via facing a lower portion of the interposer.