Abstract: A fingerprint-based network authentication method and system thereof comprises a user end and an authentication end. The user end has a fingerprint capture device comprising a fingerprint capture unit, a fingerprint processing unit, and a transmission unit. The fingerprint capture unit captures a fingerprint image, which is received and packaged into a data packet by the fingerprint processing unit. The transmission unit transmits the data packet. The authentication end has an authentication device comprising a transmission unit, a fingerprint processing and control unit, a data storage unit, and an interface unit. The transmission unit receives the data packet. The fingerprint processing and control unit receives and compares the data packet. The data storage unit stores fingerprint data and related user data. The interface unit transforms a comparison result into a control signal and replies the authentication result so as to authenticate the user's identity and confirm the limits of authority.

Abstract: A system for controlling a polishing machine during polishing of a workpiece, such as a semiconductor wafer, includes a carrier which has an interface surface for engaging a workpiece and establishing ultrasonic coupling thereto. At least one crystal oscillator is ultrasonically coupled to the carrier and operates at a resonant frequency in an ultrasonic band which is indicative of a desired polishing depth of the workpiece, such as the endpoint of polishing. A detector circuit provides an output signal which is representative of an output level of the crystal oscillator. A processor circuit receives the signal from the detector circuit and provides a signal to the polishing machine when the amplitude of the signal from the detector circuit indicates that the desired polishing endpoint has been reached. A number of crystal oscillators can be spatially arranged on the carrier to establish a local polishing depth detection array.

Abstract: A plug is formed of polysilicon, or other oxidizable conductor. Chemical-mechanical polishing is performed, with a polish stop layer defining the top of the dielectric layer. The upper portion of the polysilicon is oxidized to a controlled depth, then the oxidized portion is removed by an etch, followed by removal of the polish stop layer. The plug thus formed protrudes a controllable distance above the surrounding dielectric, providing good contact to subsequent conductive layers.