Abstract: A pressurizing centrifugal dehydrator for removing moisture according to the present disclosure includes: an inner basket into which slurry is introduced; an outer basket surrounding the inner basket; a blocking barrier disposed in the outer basket; and a gas supplying portion for supplying gas into the inner basket and/or the outer basket, wherein a dehydration product is positioned between an outer circumference of the blocking barrier and an inner side of the outer basket to maintain airtightness of the outer basket.

Abstract: The present invention relates to a device and a method for measuring a magnetic field, wherein a spin current is injected into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.

Abstract: A magnetic field sensor of the present invention includes a first electrode including a magnetic material, a second electrode including a non-magnetic material, a common electrode disposed between the first electrode and the second electrode and connected to a ground terminal, a power supplier of which one end is connected to the first electrode and the second electrode and of which another end is connected to the common electrode to supply power of a frequency band required, a variable resistor configured to control at least one of a resistance value between the first electrode and the power supplier or a resistance value between the second electrode and the power supplier, and a differential amplifier connected to the first electrode through a positive terminal and connected to the second electrode through a negative terminal to output a difference value between a first capacitance generated by the first electrode and a second capacitance generated by the second electrode in response to external application

Abstract: The present invention relates to a device and a method for measuring a magnetic field and, more particularly, to a device and a method for measuring a magnetic field, wherein a spin current is in into a magnetic body that has magnetic anisotropy using a spin Hall effect occurring in a current applied to a conductor, and the degree of shift of hysteresis in the magnetic body is calculated while reversing the magnetization of the magnetic body by a spin torque such that an external magnetic field applied to the magnetic body can be measured precisely.

Abstract: A magnetic field sensor of the present invention includes a first electrode including a magnetic material, a second electrode including a non-magnetic material, a common electrode disposed between the first electrode and the second electrode and connected to a ground terminal, a power supplier of which one end is connected to the first electrode and the second electrode and of which another end is connected to the common electrode to supply power of a frequency band required, a variable resistor configured to control at least one of a resistance value between the first electrode and the power supplier or a resistance value between the second electrode and the power supplier, and a differential amplifier connected to the first electrode through a positive terminal and connected to the second electrode through a negative terminal to output a difference value between a first capacitance generated by the first electrode and a second capacitance generated by the second electrode in response to external application

Abstract: A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.

Abstract: A magnetic field effect transistor is presented. A magnetic field effect transistor comprises a current control part and a magnetic field applying part. A current control part comprises multiple electrodes and a current flowing material region located between multiple electrodes and in which the amount of current flowing between the electrodes is changed, and a magnetic field applying part applying a magnetic field generating from a magnetization state, which changes according to external input, of a pre-set material. By controlling current by using magnetic fields, high speed operation is possible as charging time is not required, and calculation results may be stored without external power supply because magnetic field is supplied by altering magnetization state of a material according to external input.

Abstract: An InSb-based switching device, which operates at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements, is provided. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.

Abstract: The present invention provides an InSb-based switching device operating at room temperature by using a magnetic field controlled avalanche process for applying to magneto-logic elements. A switching device of one embodiment includes a p-type semiconductor layer; an n-type semiconductor layer; and contact layers disposed on one of the p-type and n-type semiconductor layers, the p-type semiconductor layer being in contact with the n-type semiconductor layer such that a current can be applied through the contact layers to the p-type and n-type semiconductor layers to cause a current flow from one of the contact layers to the p-type and n-type semiconductor layers and from the p-type and n-type semiconductor layers to the other of the contact layers, whereby the current flow can be controlled by an intensity of a magnetic field applied to the p-type and n-type semiconductor layers substantially perpendicularly thereto.

Abstract: A hybrid semiconductor-ferromagnet device is a device which has micromagnets (Co) deposited on semiconductor (InAs) two-dimensional electrons, and which has a junction structure of positive and negative magnetic field regions using a stray field resulting from the micromagnets. The magnetoresistance measured in the hybrid semiconductor-ferromagnet device has an asymmetrical hall resistance profile, and a change in magnetoresistance thereof is very large. The measured data is well consistent with the calculated results using a diffusive mode and a ballistic model.