Patents by Inventor Sung-Keun Won

Sung-Keun Won has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Image sensor and method for forming the same
    Patent number: 8067301
    Abstract: A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.
    Type: Grant
    Filed: January 22, 2010
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Duk-Min Yi, Sung-Keun Won, Jun-Yeoul You
  • IMAGE SENSOR AND METHOD FOR FORMING THE SAME
    Publication number: 20100120190
    Abstract: A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.
    Type: Application
    Filed: January 22, 2010
    Publication date: May 13, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Duk-Min YI, Sung-Keun WON, Jun-Yeoul YOU
  • Image sensor and method for forming the same
    Publication number: 20060057760
    Abstract: A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.
    Type: Application
    Filed: September 1, 2005
    Publication date: March 16, 2006
    Inventors: Duk-Min Yi, Sung-Keun Won, Jun-Yeoul You