Abstract: The present invention provides an insulating film manufacturing method of a semiconductor process, the method comprises the steps of: placing a wafer in a processing chamber; by supplying a source gas to the processing chamber at a first pressure higher than an atmospheric pressure, forming an insulating film on the wafer as at least one of an oxidation process and a nitridation process proceeds; by supplying a purge gas to the processing chamber, purging the source gas; and, by supplying atmospheric gas to the processing chamber at a second pressure higher than atmospheric pressure, strengthening the insulation film as the heat treatment process proceeds.

Abstract: The present invention provides a method for doping carbon in a thin film on a wafer, the method comprising the steps of: arranging a thin film-formed wafer in a processing area; supplying an atmospheric gas into the processing area to bring the pressure in the processing area to a process pressure higher than atmospheric pressure; heating the processing area to bring the temperature in the processing area to a processing temperature; and supplying a source gas containing carbon to the processing area to allow the source gas to undergo a chemical reaction with the thin film under the process pressure at the process temperature, thereby injecting the carbon into the thin film.

Abstract: The present disclosure provides a high-pressure substrate processing apparatus and a high-pressure chemical vapor deposition method for a substrate, using same, the high-pressure substrate processing apparatus comprising: a chamber having an inner space in which a substrate to be processed is accommodated; a fluid supply module which communicates with the inner space and is configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module which communicate with the inner space and are configured to exhaust the fluid through different paths, wherein the adjustment amount of the first exhaust module for the pressure in the inner space is smaller than the adjustment amount of the second exhaust module, and the first exhaust module operates only when the inner space is in a high pressure higher than atmospheric pressure.

Abstract: The present invention provides a high-pressure wafer processing method using a dual high-pressure wafer processing facility, the method comprising the steps of: disposing a wafer in a first processing chamber of a first high-pressure wafer processing module; performing a first process, which corresponds to one among high-pressure oxidation, high-pressure nitridation, high-pressure carbon doping, and high-pressure heat treatment, on the wafer in the first processing chamber; transferring the wafer to a second processing chamber of a second high-pressure wafer processing module; and performing a second process, which corresponds to another among the high-pressure oxidation, the high-pressure nitridation, the high-pressure carbon doping, and the high-pressure heat treatment, on the wafer in the second processing chamber.

Abstract: According to an embodiment of the present invention, a method for forming a thin film includes loading an object to be processed into a chamber, and while controlling the temperature of the object to be processed to be 400° C. or less, supplying an Si source gas and an oxidizing gas into the chamber to form a silicon oxide film on the surface of the object to be processed, wherein the oxidizing gas is heated to a temperature exceeding 400° C. before being supplied into the chamber.

Abstract: A display apparatus is disclosed. The display apparatus includes a voice collecting unit which collects a user's voice; a first communication unit which transmits the user's voice to a first server, and receives text information corresponding to the user's voice from the first server; a second communication unit which transmits the received text information to a second server, and receives response information corresponding to the text information; an output unit which outputs a response message corresponding to the user's voice based on the response information; and a control unit which controls the output unit to output a response message differentiated from a response message corresponding to a previously collected user's voice, when a user's voice having a same utterance intention is re-collected.

Abstract: Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.

Abstract: Provided are a substrate supporting unit and a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor on which a substrate is placed on a top surface thereof, one or more heat absorbing members which are capable of being converted between a mounted position at which the heat absorbing member is disposed on an upper portion of the susceptor to thermally contact the susceptor and a released position at which the heat absorbing member is separated from the upper portion of the susceptor, the one or more heat absorbing members absorbing heat of the susceptor at the mounted position, and an edge ring having a plurality of fixing slots in which the heat absorbing members are selectively inserted and fixed.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method for forming a silicon film, and more particularly, to a method for forming a polycrystalline silicon film including pretreatment process in a process for forming a silicon film. According to an embodiment of the present invention, a method for forming a polycrystalline silicon film by annealing a amorphous silicon film deposited on a base, the method includes a pretreatment process of allowing a pretreatment gas including at least one of N, C, O and B to flow.

Abstract: A method for manufacturing a memory device having a vertical structure according to one embodiment of the present invention comprises: a step for alternatingly laminating one or more insulation layers and one or more sacrificial layers on a substrate; a step for forming a penetration hole for penetrating the insulation layer and the sacrificial layer; a step for forming a pattern for filling up the penetration hole; a step for forming an opening for penetrating the insulation layer and the sacrificial layer; and a step for removing the sacrificial layer by supplying an etchant through the opening, wherein the step for laminating the insulation layer includes a step for depositing a first silicon oxide film by supplying to the substrate at least one gas selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and the step for laminating the sacrificial layer includes a step for depositing a second silicon oxide film by supplying dichlorosilane (SiCl2H2) to the substrate.

Abstract: Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate in a state where the substrate is loaded in a chamber to deposit the amorphous silicon film on the substrate. The atmospheric gas includes at least one of hydrogen and helium. The source gas includes at least one of silane (SiH2), disilane (Si2H6), and dichlorosilane (SiCl2H2).

Abstract: Provided is a method of manufacturing a memory device having a 3-dimensional structure, which includes alternately stacking one or more dielectric layers and one or more sacrificial layers on a substrate, forming a through hole passing through the dielectric layers and the sacrificial layers, forming a pattern filling the through hole, forming an opening passing through the dielectric layers and the sacrificial layers, and supplying an etchant through the opening to remove the sacrificial layers. The stacking of the dielectric layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, and Si4H10, to deposit a silicon oxide layer. The stacking of the sacrificial layers includes supplying the substrate with one or more gases selected from the group consisting of SiH4, Si2H6, Si3H8, Si4H10, and dichloro silane (SiCl2H2), and ammonia-based gas, to deposit a silicon nitride layer.

Abstract: A display apparatus, an electronic device, an interactive system, and controlling methods thereof are provided. The display apparatus includes: a storage unit which stores peripheral device control information in which a remote control signal for controlling a peripheral device of the display apparatus matches with a control signal corresponding to a user voice; a voice collector which the user voice; a communicator which transmits the collected user voice to the display apparatus and receives the control signal corresponding to the user voice from the display apparatus; an infrared ray (IR) transmitter which transmits the remote control signal for controlling the peripheral device; and a controller which, if the control signal is received from the display apparatus, controls the IR transmitter to transmit a remote control signal corresponding to the received control signal among remote control signals stored in the storage unit, to the peripheral device.

Abstract: Provided is a production method for a semiconductor device comprising a metal silicide layer. According to one embodiment of the present invention, the production method for a semiconductor device comprises the steps of: forming an insulating layer on a substrate, on which a polysilicon pattern has been formed, in such a way that the polysilicon pattern is exposed; forming a silicon seed layer on the exposed polysilicon pattern that has been selectively exposed with respect to the insulating layer; forming a metal layer on the substrate on which the silicon seed layer has been formed; and forming a metal silicide layer by carrying out a heat treatment on the substrate on which the metal layer has been formed.

Abstract: A display apparatus, an electronic device, an interactive system, and controlling methods thereof are provided. The display apparatus includes: a storage unit which stores peripheral device control information in which a remote control signal for controlling a peripheral device of the display apparatus matches with a control signal corresponding to a user voice; a voice collector which the user voice; a communicator which transmits the collected user voice to the display apparatus and receives the control signal corresponding to the user voice from the display apparatus; an infrared ray (IR) transmitter which transmits the remote control signal for controlling the peripheral device; and a controller which, if the control signal is received from the display apparatus, controls the IR transmitter to transmit a remote control signal corresponding to the received control signal among remote control signals stored in the storage unit, to the peripheral device.

Abstract: A display apparatus, an electronic device, an interactive system, and controlling methods thereof are provided. The display apparatus includes: a storage unit which stores peripheral device control information in which a remote control signal for controlling a peripheral device of the display apparatus matches with a control signal corresponding to a user voice; a voice collector which the user voice; a communicator which transmits the collected user voice to the display apparatus and receives the control signal corresponding to the user voice from the display apparatus; an infrared ray (IR) transmitter which transmits the remote control signal for controlling the peripheral device; and a controller which, if the control signal is received from the display apparatus, controls the IR transmitter to transmit a remote control signal corresponding to the received control signal among remote control signals stored in the storage unit, to the peripheral device.

Abstract: A display apparatus, an electronic device, an interactive system, and controlling methods thereof are provided. The display apparatus includes: a storage unit which stores peripheral device control information in which a remote control signal for controlling a peripheral device of the display apparatus matches with a control signal corresponding to a user voice; a voice collector which the user voice; a communicator which transmits the collected user voice to the display apparatus and receives the control signal corresponding to the user voice from the display apparatus; an infrared ray (IR) transmitter which transmits the remote control signal for controlling the peripheral device; and a controller which, if the control signal is received from the display apparatus, controls the IR transmitter to transmit a remote control signal corresponding to the received control signal among remote control signals stored in the storage unit, to the peripheral device.