Abstract: A method for fabricating a semiconductor device, comprising forming a first photoresist pattern having a hole on a first layer, forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern, removing the surface curing layer, forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern, removing the first and second photoresist patterns, and etching the first layer using the first and second curing patterns as an etch barrier.

Abstract: The present invention relates to a composition for treating chronic hepatitis B, containing clevudine and adefovir dipivoxil. The combined formulation of the present invention maximizes the effect for treating diseases caused by infection of hepatitis B virus and shows a mutual inhibitory activity against a resistant virus compared with a single-component formulation.

Abstract: A method for fabricating a semiconductor device, comprising forming a first photoresist pattern having a hole on a first layer, forming a surface curing layer in the hole and curing the first photoresist pattern on an inner sidewall of the hole to form a first curing pattern, removing the surface curing layer, forming a second photoresist pattern in the hole and curing the second photoresist pattern that contacts with the first curing pattern to form a second curing pattern, removing the first and second photoresist patterns, and etching the first layer using the first and second curing patterns as an etch barrier.

Abstract: A method for forming a pattern of a semiconductor device comprises: forming a stacked film including an underlying layer, an antireflection film and a photoresist film over a semiconductor substrate; coating an over-coating composition over the photoresist film to form an over-coating film; performing an exposing and developing process with a cell mask on the photoresist film where the over-coating film is formed to form a photoresist pattern; forming a silicon-containing-RELACS layer over the antireflection film including the photoresist pattern where the over-coating film is formed; removing the over-coating film and the silicon containing RELACS layer on the photoresist pattern to form a spacer of the silicon containing RELACS layer at sidewalls of the photoresist pattern; removing the photoresist pattern; and etching the antireflection film and the underlying layer with the spacer of the silicon containing RELACS layer as a mask to form an antireflection pattern and an underlying pattern.

Abstract: The present invention relates to a method for producing clinically effective quantities of human adipose tissue-derived stromal cells for treating fistulas and a composition made with the same. The method of the present invention can efficiently produce clinically effective number of adipose tissue-derived stromal cells within a short period by improving conventional standard culturing methods. The adipose stem cells composition containing the adipose tissue-derived stromal cells obtained by the method of the present invention exhibit superior multipotency and immunomodulatory activity over those of a cell composition produced by conventional methods, and thus is more suitable for treating fistulas. The cell composition of the present invention has excellent clinical usages especially since immune response is suppressed in allogenic adipose-derived stem cells.

Abstract: A method of and an apparatus for taking an image of a mobile terminal. A shooting direction of the mobile terminal is recognized. When the recognized shooting direction is not a reference direction and an image is taken, a direction of an image stored in a storage unit is matched with a direction of a preview image. Therefore, since an image displayed on a preview screen, desired by a user, is stored, additional editing of the image is not required and user convenience is improved.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing anti-reflection film.

Abstract: A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Abstract: Disclosed herein is a composition for removing an immersion lithography solution. The composition includes an organic solvent and an acid compound. Also disclosed is a method for manufacturing a semiconductor device including an immersion lithography process. When a photoresist pattern is formed by the immersion lithography process, an exposure process is performed on a photoresist film formed over an underlying layer with an immersion lithography exposer. Then, the composition is dripped over the wafer to remove residual immersion lithography solution on the photoresist film, thereby improving a water mark defect phenomenon.

Abstract: A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.

Abstract: A method for forming a pattern of a semiconductor device comprises: forming a stacked film including an underlying layer, an antireflection film and a photoresist film over a semiconductor substrate; coating an over-coating composition over the photoresist film to form an over-coating film; performing an exposing and developing process with a cell mask on the photoresist film where the over-coating film is formed to form a photoresist pattern; forming a silicon-containing-RELACS layer over the antireflection film including the photoresist pattern where the over-coating film is formed; removing the over-coating film and the silicon containing RELACS layer on the photoresist pattern to form a spacer of the silicon containing RELACS layer at sidewalls of the photoresist pattern; removing the photoresist pattern; and etching the antireflection film and the underlying layer with the spacer of the silicon containing RELACS layer as a mask to form an antireflection pattern and an underlying pattern.

Abstract: Disclosed herein is a method for manufacturing a semiconductor device that includes performing an O2 plasma treatment step after forming a Si-containing photoresist film.

Abstract: In a method for forming a pattern of a semiconductor device, an ultra fine pattern is formed using a spacer patterning technology to overcome resolution limits of an exposer. A silicon-containing resist enhancement lithography assisted by a chemical shrink (RELACS) layer is formed with a spin-con-coating method in a track apparatus over a photoresist pattern. As a result, a cross-linking reaction is generated between the RELACS layer and the photoresist patterns to form the spacer, and the spacer is used as a mask in the patterning process.

Abstract: Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.

Abstract: Disclosed is an organic electroluminescent device including a first electrode, a second electrode, and a light-emitting layer having a guest material of a red luminescent material and at least two host materials so as to be formed between the first and second electrodes. One of the host materials is a composite including the following structural formula: Moreover, one of the host materials can be a substituted or non-substituted quinoline derivative.

Abstract: A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process.

Abstract: Provided is a technology involving differentiating preadipocytes, derived from human adipose tissues, into adipocytes and transplanting the differentiated adipocytes in conjunction with a biodegradable scaffold into the body. According to the present invention, when immature adipocytes having a cell diameter of 20 to 40 ?m, obtained by differentiation of adipose tissue-derived preadipocytes into adipose tissues, are used in conjunction with a scaffold in autologous or allogeneic transplantation, maturation of adipocytes at the target transplantation site leads to a gradual increase in the volume of adipocytes. Therefore, the adipocyte-scaffold composition according to the present invention can be utilized as an effective body volume replacement and can treat various disorders due to defects of soft tissues or aesthetic defects in appearance.

Abstract: Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.

Abstract: A photoresist composition includes a base resin, a copolymer of acrylic acid or methacrylic acid and 3,3-dimethoxypropene, a photoacid generator, an organic base, and an organic solvent, and is used for forming a fine (micro) pattern in a semiconductor device by double patterning. The invention method can markedly reduce the number of steps in etching and hard mask deposition processes, so that work hours and manufacturing costs may be reduced, contributing to an increase in yield of semiconductor devices.

Abstract: A method for manufacturing a semiconductor device using an immersion lithography process is disclosed. The semiconductor device is manufactured by filtering an air by using an amine removing chemical filter; and applying the filtered air onto a photoresist film formed on a semiconductor substrate (i) after washing the photoresist film with water and before an exposure process or (ii) after washing the photoresist film with water and before a post-baking process. These steps thereby effectively prevent water mark defects.