Abstract: The present invention provides a lead frame having excellent solder wettability and solderability, that is well-bonded to a copper wire, and manufactured with low cost, and a semiconductor package manufactured by using the same. The lead frame includes: a base material; a first metal layer formed on at least one surface of the base material, the first metal layer comprising nickel; a second metal layer formed on a surface of the first metal layer, the second metal layer comprising palladium; and a third metal layer formed on a surface of the second metal layer, the third metal layer comprising silver.

Abstract: A lead frame and a semiconductor package including the lead frame are provided. The lead frame includes: a base material; a first metal layer which is formed on at least one side of the base material, of which a surface is roughly formed, and which includes copper or nickel; a second metal layer which is formed on a surface of the first metal layer, of which a surface is roughly formed, and which includes palladium or a palladium alloy; a third metal layer which is formed on a surface of the second metal layer, of which a surface is roughly formed, and which includes gold or a gold alloy; and a fourth metal layer which is formed on a surface of the third metal layer, of which a surface is roughly formed, and which includes metal that includes silver.

Abstract: The present invention provides a lead frame having excellent solder wettability and solderability, that is well-bonded to a copper wire, and manufactured with low cost, and a semiconductor package manufactured by using the same. The lead frame includes: a base material; a first metal layer formed on at least one surface of the base material, the first metal layer comprising nickel; a second metal layer formed on a surface of the first metal layer, the second metal layer comprising palladium; and a third metal layer formed on a surface of the second metal layer, the third metal layer comprising silver.

Abstract: A lead frame having improved connectivity with a molded portion and a method of manufacturing the lead frame are provided. The lead frame includes a die pad on which a semiconductor chip is to be disposed; at least one lead portion arranged to be connected to the semiconductor chip; and at least one plating layer formed on at least one of the at least one lead portion and the die pad, wherein a top surface of the at least one plating layer has an uneven portion having a first average surface roughness.

Abstract: A lead frame and a semiconductor package including the lead frame are provided. The lead frame includes: a base material; a first metal layer which is formed on at least one side of the base material, of which a surface is roughly formed, and which includes copper or nickel; a second metal layer which is formed on a surface of the first metal layer, of which a surface is roughly formed, and which includes palladium or a palladium alloy; a third metal layer which is formed on a surface of the second metal layer, of which a surface is roughly formed, and which includes gold or a gold alloy; and a fourth metal layer which is formed on a surface of the third metal layer, of which a surface is roughly formed, and which includes metal that includes silver.

Abstract: A lead frame having improved connectivity with a molded portion and a method of manufacturing the lead frame are provided. The lead frame includes a die pad on which a semiconductor chip is to be disposed; at least one lead portion arranged to be connected to the semiconductor chip; and at least one plating layer formed on at least one of the at least one lead portion and the die pad, wherein a top surface of the at least one plating layer has an uneven portion having a first average surface roughness.

Abstract: A lead frame having a structure that can discharge hydrogen adsorbed during deposition and can reduce a galvanic potential difference between plating layers and a method of manufacturing the same are provided. The method includes forming a Ni plating layer formed of Ni or a Ni alloy on a base metal layer formed of a metal, forming a Pd plating layer formed of Pd or an Pd alloy on the Ni plating layer, heat-treating the Ni plating layer and the Pd plating layer, and forming a protective plating layer on the heat-treated Pd plating layer.

Abstract: Provided is a method for manufacturing a lead frame and a semiconductor package having a semiconductor chip for connecting to an outer board and having a base metal layer formed of iron and nickel as main elements. The method includes preparing the base metal layer of a lead frame, forming one or more plating layers on the base metal layer, mounting the semiconductor chip on the lead frame, molding the semiconductor chip and at least a portion of the lead frame, bending the lead frame to form the lead frame in a predetermined shape, and heat-treating the lead frame for forming a diffusion layer in order to protect the lead frame from corrosion.

Abstract: A lead frame having a structure that can discharge hydrogen adsorbed during deposition and can reduce a galvanic potential difference between plating layers and a method of manufacturing the same are provided. The method includes forming a Ni plating layer formed of Ni or a Ni alloy on a base metal layer formed of a metal, forming a Pd plating layer formed of Pd or an Pd alloy on the Ni plating layer, heat-treating the Ni plating layer and the Pd plating layer, and forming a protective plating layer on the heat-treated Pd plating layer.

Abstract: Provided is a method for manufacturing a lead frame and a semiconductor package having a semiconductor chip for connecting to an outer board and having a base metal layer formed of iron and nickel as main elements. The method includes preparing the base metal layer of a lead frame, forming one or more plating layers on the base metal layer, mounting the semiconductor chip on the lead frame, molding the semiconductor chip and at least a portion of the lead frame, bending the lead frame to form the lead frame in a predetermined shape, and heat-treating the lead frame for forming a diffusion layer in order to protect the lead frame from corrosion.