Patents by Inventor Sung-Kyoo Park

Sung-Kyoo Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8246790
    Abstract: The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that
    Type: Grant
    Filed: October 23, 2008
    Date of Patent: August 21, 2012
    Assignee: LG Chem, Ltd.
    Inventors: Se-Won Baek, Kyoung-Su Ha, Sung-Kyoo Park, Jun-Seok Ko, Dong-Hyun Woo, Young-Bae Kim, Jung-Hoon Chang
  • Patent number: 8013185
    Abstract: The present invention provides a method for preparing unsaturated aldehydes and/or unsaturated fatty acids from olefins using a fixed-bed catalytic partial oxidation reactor, in particular, a start-up method upon packing with catalysts and initiating the reaction, and a process for producing unsaturated aldehydes and/or unsaturated fatty acids with high yield.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: September 6, 2011
    Assignee: LG Chem, Ltd.
    Inventors: Jun-Seok Ko, Kyoung-Su Ha, Sung-Kyoo Park, Sung-Soo Park, Se-Won Baek, Dong-Hyun Woo, Seong-Jin Kim
  • Publication number: 20100224478
    Abstract: The present invention provides a (meth)acrylic acid collecting method for collecting a (meth)acrylic acid from a mixed gas that includes an organic byproduct, a steam, and a (meth)acrylic acid that are generated in a production reaction of the (meth)acrylic acid, which includes the steps of a) contacting the mixed gas that includes the organic byproduct, the steam, and the (meth)acrylic acid with a (meth)acrylic acid absorption solvent to obtain a gas that includes the organic byproduct and the steam and the (meth)acrylic acid containing solution while the gas and the (meth)acrylic acid containing solution are separated from each other; b) contacting the gas that includes the organic byproduct and the steam that are obtained in the step a with the organic byproduct absorption solvent to obtain the gas that includes the steam and the organic byproduct containing solution while the gas and the organic byproduct containing solution are separated from each other; c) supplying the gas that includes the steam that
    Type: Application
    Filed: October 23, 2008
    Publication date: September 9, 2010
    Inventors: Se-Won Baek, Kyoung-Su Ha, Sung-Kyoo Park, Jun-Seok Ko, Dong-Hyun Woo, Young-Bae Kim, Jung-Hoon Chang
  • Publication number: 20100219469
    Abstract: A mask read-only memory (ROM) cell structure includes buried gate electrodes, common source regions under the gate electrodes, common drain regions extending between upper portions of adjacent ones of the gate electrodes, and two vertical channel regions on opposite sides, respectively, of each of the gate electrodes. The channel regions are selectively coded such that the cell transistors are on or off depending on whether the channel region of the transistor is coded. To this end, selected ones of the channel regions of the mask ROM structure are coded by forming ion implantation regions that differentiate the threshold voltages of the thus coded channel regions from the non-coded channel regions. The coding process may thus be carried out using a shallow ion implantation process. Accordingly, a relatively thin mask for coding may be used, and the ion implantation process may be carried out at a relatively low energy level.
    Type: Application
    Filed: February 25, 2010
    Publication date: September 2, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-Kook Min, Yong-Suk Choi, Sung-Kyoo Park
  • Publication number: 20100036157
    Abstract: The present invention provides a method for preparing unsaturated aldehydes and/or unsaturated fatty acids from olefins using a fixed-bed catalytic partial oxidation reactor, in particular, a start-up method upon packing with catalysts and initiating the reaction, and a process for producing unsaturated aldehydes and/or unsaturated fatty acids with high yield.
    Type: Application
    Filed: April 3, 2008
    Publication date: February 11, 2010
    Inventors: Jun-Seok Ko, Kyoung-Su Ha, Sung-Kyoo Park, Sung-Soo Park, Se-Won Baek, Dong-Hyun Woo, Seong-Jin Kim
  • Publication number: 20070161190
    Abstract: Provided are a split-gate-type nonvolatile memory device and method of fabricating the same. The method includes forming isolation patterns defining active regions in a predetermined region of a semiconductor substrate. A first conductive layer is formed on the resultant structure having the isolation patterns. The first conductive layer has openings exposing both ends of the isolation patterns. Mask patterns are formed between the openings on the first conductive layer, thereby exposing a top surface of the first conductive layer as a rectangular type. The exposed top surface of the first conductive layer is thermally oxidized to form silicon oxide patterns with rectangular shapes. The first conductive layer is anisotropically etched using the silicon oxide patterns as etch masks to form floating conductive patterns. Thereafter, control gate electrodes are formed across the isolation patterns on the silicon oxide patterns.
    Type: Application
    Filed: January 3, 2007
    Publication date: July 12, 2007
    Inventors: Sung-Kyoo Park, Hong-Kook Min, Chang-Mo Park
  • Publication number: 20070032022
    Abstract: The Mask ROM includes a plurality of doped lines arranged on a substrate of a first conductivity. The doped lines have a second conductivity. In addition, the Mask ROM further includes an insulation film covering the substrate, a plurality of interconnections intersecting the doped lines in parallel and arranged on the insulation film, an isolative doped region of the first conductivity arranged at the doped line of at least one intersecting place selected from intersecting places between the interconnections and the doped lines, a first contact plug penetrating the insulation film at the selected intersecting place and connecting the isolative doped region to the interconnection, and a second contact plug penetrating the insulation film at a deselected intersecting place and connecting the doped line to the interconnection.
    Type: Application
    Filed: August 4, 2006
    Publication date: February 8, 2007
    Applicant: Samsung Electronics Co., LTD
    Inventors: Hong-Kook Min, Chang-Mo Park, Sung-Kyoo Park
  • Patent number: 6200497
    Abstract: A low-voltage excited pink phosphor is provided. The pink phosphor includes a ZnS:Zn or ZnS:Ag phosphor and a (ZnnCd1−n)S:Ag,Cl phosphor (n=0.1 to 0.5) and has good color purity, high brightness and excellent color maintenance.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: March 13, 2001
    Assignee: Samsung Display Devices Co. Ltd.
    Inventors: Sung-Kyoo Park, Hyung-Keun Park
  • Patent number: 6200496
    Abstract: A low-voltage excited white phosphor is provided. The white phosphor includes a ZnS:Zn phosphor and a (ZnnCd1−n)S:Ag,Cl phosphor (n=0.5 to 0.7), and has good color purity, high brightness and excellent color maintenance.
    Type: Grant
    Filed: October 7, 1999
    Date of Patent: March 13, 2001
    Assignee: Samsung Display Devices Co., Ltd.
    Inventors: Hyung-Keun Park, Sung-Kyoo Park