Abstract: Methods and devices to support multiple frequency bands in radio frequency (RF) circuits are shown. The described methods and devices are based on adjusting the effective width of a transistor in such circuits by selectively disposing matching transistors in parallel with the transistor. The presented devices and methods can be used in RF circuits including low noise amplifiers (LNAs), RF receiver front-ends or any other RF circuits where input matching to wideband inputs is required.

Abstract: Methods and devices for limiting the power level of low noise amplifiers (LNA) implemented in radio frequency (RF) receiver front-ends. The described methods are applicable to bypass, low and high gain modes of the LNA. According to the described methods, the decoder allows the signal to be clamped before or after being attenuated. The benefit of such methods is to improve large signal performances (e.g. IIP3, P1dB) of the RF receiver front-end, while still meeting the clamping requirements, or improve (lower) clamped output power, while still meeting large signal performances (e.g. IIP3, P1dB).

Abstract: New multi-input LNA architectures with improved passive mode negative gain performance that reconfigure the bypass path routes to achieve wide-band bypass matching and make bypass matching for lower frequency bands possible to achieve desired gain specifications. In a first embodiment, improved wide-band performance is provided by a bypass path that optionally does not pass through an impedance matching network and thus has a dedicated path to RFOUT. In a second embodiment, improved wide-band performance is provided by a bypass path that does not pass through an input inductor. In a third embodiment, improved wide-band performance is provided by a bypass path that has a first portion that optionally does not pass through an impedance matching network, and a second portion that does not pass through an input inductor. In a fourth embodiment, improved wide-band performance is provided by selectively disabling a load inductor in some modes of operation.

Abstract: Methods and devices for limiting the power level of low noise amplifiers (LNA) implemented in radio frequency (RF) receiver front-ends. The described methods are applicable to bypass, low and high gain modes of the LNA. According to the described methods, the decoder allows the signal to be clamped before or after being attenuated. The benefit of such methods is to improve large signal performances (e.g. IIP3, P1dB) of the RF receiver front-end, while still meeting the clamping requirements, or improve (lower) clamped output power, while still meeting large signal performances (e.g. IIP3, P1dB).

Abstract: Methods and devices to support multiple frequency bands in radio frequency (RF) circuits are shown. The described methods and devices are based on adjusting the effective width of a transistor in such circuits by selectively disposing matching transistors in parallel with the transistor. The presented devices and methods can be used in RF circuits including low noise amplifiers (LNAs), RF receiver front-ends or any other RF circuits where input matching to wideband inputs is required.

Abstract: Methods and devices for limiting the power level of low noise amplifiers (LNA) implemented in radio frequency (RF) receiver front-ends. The described methods are applicable to bypass, low and high gain modes of the LNA. According to the described methods, the decoder allows the signal to be clamped before or after being attenuated. The benefit of such methods is to improve large signal performances (e.g. IIP3, P1dB) of the RF receiver front-end, while still meeting the clamping requirements, or improve (lower) clamped output power, while still meeting large signal performances (e.g. IIP3, P1dB).

Abstract: An ion implantation apparatus for integrated circuit manufacturing is disclosed. In an apparatus in accordance with an embodiment of the invention, a current detector detects a current flowing to a turbo pump. A display displays information about the detected current, and a controller determines whether the detected current is within a specified range. If the detected current is not within the specified range, the controller issues a power control signal to, stop the turbo pump. At this time, the controller also stops an ion implantation of the apparatus.

Abstract: A semiconductor device is manufactured by forming a thin layer over a semiconductor substrate, coating photoresist on the thin layer, forming a photoresist pattern over the semiconductor substrate, injecting ions into the photoresist pattern so as to harden the photoresist pattern, and etching the thin layer by using the hardened photoresist pattern as an etch mask. The hardened photoresist pattern has an increased etch selectivity with respect to an underlying layer, allowing the use of thinner photoresist layers and improved etching.