Patents by Inventor Sung-Kyu Jo

Sung-Kyu Jo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • 3-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME
    Publication number: 20080165580
    Abstract: A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
    Type: Application
    Filed: March 20, 2008
    Publication date: July 10, 2008
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-Tae PARK, Jung-Dal CHOI, Sung-Kyu JO
  • Self-reference sense amplifier circuit and sensing method
    Publication number: 20080106945
    Abstract: A sense amplifier circuit for a flash memory device is disclosed. The sense amplifier including a first transistor controlled by a first voltage applied via a selected bit line, and a second transistor controlled by a second voltage applied via an unselected bit line. The second transistor has a current driving capability lower than a current driving capability of the first transistor.
    Type: Application
    Filed: April 24, 2007
    Publication date: May 8, 2008
    Inventors: Sung-Kyu Jo, Yun-Ho Choi
  • 3-level non-volatile semiconductor memory device and method of driving the same
    Patent number: 7366033
    Abstract: A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
    Type: Grant
    Filed: July 27, 2006
    Date of Patent: April 29, 2008
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ki-Tae Park, Jung-Dal Choi, Sung-Kyu Jo
  • 3-LEVEL NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF DRIVING THE SAME
    Publication number: 20070025161
    Abstract: A page buffer for a non-volatile semiconductor memory device includes a switch configured to couple a first bitline coupled to a first memory cell to a second bitline coupled to a second memory cell, a first latch block coupled to the first bitline and configured to transfer a first latch data to the first memory cell, and a second latch block coupled to the second bitline and the first latch block, and configured to transfer a second latch data to the second memory cell.
    Type: Application
    Filed: July 27, 2006
    Publication date: February 1, 2007
    Inventors: Ki-Tae PARK, Jung-Dal CHOi, Sung-Kyu JO