Abstract: A charging integrated circuit (IC) in a mobile device including battery includes; a switching charger including at least one inductor, a direct charger including at least one capacitor, and a control circuit. The control circuit detects a connection between the mobile device and an external power unit and a disconnection between the mobile device and the external power unit, wherein the switching charger and the direct charger selectively receive an external power signal provided by the external power unit by the connection between the mobile device and an external power unit.

Abstract: A first mobile device including a connection terminal configured to electrically connect to a second mobile device, a variable impedance device connected to the connection terminal, the variable impedance device configured to vary an impedance, processing circuitry configured to determine a power line communication (PLC) mode between the first mobile device and the second mobile device to be one of a low-speed PLC mode or a high-speed PLC mode, and control the impedance of the variable impedance device according to the determined PLC mode, and a PLC modem configured to receive power from the second mobile device or communicate data with the second mobile device based on the determined PLC mode.

Abstract: A semiconductor device for evaluating characteristics of a transistor is provided. The semiconductor device includes a substrate, an active area defined on the substrate, an insulated gate configured to be formed on the active area, a first source layer and a first drain layer configured to be formed on the active area in a first two-way direction of the gate, and a second source layer and a second drain layer configured to be formed on the active area in a second two-way direction of the gate. The first source layer, the first drain layer, and the second drain layer are formed as a first conductive type. The second source layer is formed as a second conductive type.

Abstract: A semiconductor device for evaluating characteristics of a transistor is provided. The semiconductor device includes a substrate, an active area defined on the substrate, an insulated gate configured to be formed on the active area, a first source layer and a first drain layer configured to be formed on the active area in a first two-way direction of the gate, and a second source layer and a second drain layer configured to be formed on the active area in a second two-way direction of the gate. The first source layer, the first drain layer, and the second drain layer are formed as a first conductive type. The second source layer is formed as a second conductive type.