Abstract: Disclosed are an artificial intelligence device and a method for operating the same. An artificial intelligence device according to at least one embodiment of various embodiments of the present disclosure includes: a display; and a processor configured to control the display, wherein the processor is configured to: receive and register a first wake-up word; activate a voice recognition function when the registered first wake-up word is received, and transmit the first wake-up word to a server, wherein the first wake-up word is not a basic wake-up word embedded in the artificial intelligence device.

Abstract: A method of fabricating a semiconductor device including forming a pre metal dielectric liner over a semiconductor substrate on which a transistor is formed. The pre metal dielectric liner is sputter etched to form an unstable interface at the surface. The boron is trapped in an interface in an unstable state in a surface of the PMD liner to effectively suppress the boron penetration phenomenon to the semiconductor substrate.

Abstract: Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may include forming a pre-metal dielectric liner, which has a multi-layer structure including a plurality of interfacial surfaces, on an entire surface of a semiconductor substrate formed with a transistor, and forming a boron phospho silicate glass (BPSG) oxide layer on the pre-metal dielectric liner. Since the pre-metal dielectric liner is formed in a multi-layer structure having a plurality of interfacial surfaces, boron (B) of an upper BPSG oxide layer is not penetrated into the semiconductor substrate.

Abstract: A method of fabricating a semiconductor device including forming a pre metal dielectric liner over a semiconductor substrate on which a transistor is formed. The pre metal dielectric liner is sputter etched to form an unstable interface at the surface. The boron is trapped in an interface in an unstable state in a surface of the PMD liner to effectively suppress the boron penetration phenomenon to the semiconductor substrate.

Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 ?m.

Abstract: A soluble polyimide for a photosensitive polyimide precursor and a photosensitive polyimide precursor composition including the soluble polyimide, wherein the soluble polyimide contains hydroxyl and acetyl moieties and at least one reactive end-cap group at one or both ends of the polymer chain. The photosensitive polyimide precursor composition comprises the soluble polyimide, a polyamic acid containing at least one reactive end-cap group at one or both ends of the polymer chain, a photo acid generator (PAG) and optionally a dissolution inhibitor. Since the polyimide film of the present invention exhibits excellent thermal, electric and mechanical properties, it can be used as insulating films or protective films for various electronic devices. A pattern with a high resolution may be formed even on the polyamide film having a thickness of above 10 &mgr;m.

Abstract: A polyamic ester prepared by partially substituting hydrogen atoms of carboxylic groups of a polyamic acid with acid labile groups, the polyamic ester comprising one or more repeating units represented by Formula 1, and each of at least one terminal of the polyamic ester molecule terminates with the same or different reactive end-capping monomer: wherein in Formula 1, R1 and R2 are independently a hydrogen atom, or an acid labile group; X is a tetravalent, an aromatic or an aliphatic organic group; Y is a divalent, an aromatic or an aliphatic organic group; and m is an integer equal to or greater than 1.

Abstract: A polyamic ester prepared by partially substituting hydrogen atoms of carboxylic groups of a polyamic acid with acid-dissociable groups, the polyamic ester comprising one or more repeating units represented by Formula 1, and each of at least one terminal of the polyamic ester molecule terminates with the same or different reactive end-capping monomer: 1