Patents by Inventor Sung Lyul Maeng

Sung Lyul Maeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8360753
    Abstract: Provided is a micro fluidic transportation device capable of controlling discontinuous transportation of micro droplets using surface acoustic wave (SAW), and a method for manufacturing the same. The micro fluidic transportation device which includes: a substrate; a piezoelectric layer formed on the substrate; an inter digitated transducer (IDT) electrode formed on the piezoelectric layer for energy conversion by generating a surface acoustic wave (SAW); and a fluid passage formed on the piezoelectric thin layer.
    Type: Grant
    Filed: December 4, 2007
    Date of Patent: January 29, 2013
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Dae-Sik Lee, Sung-Lyul Maeng, Jack Luo, Bill Milne
  • Patent number: 8101337
    Abstract: Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.
    Type: Grant
    Filed: March 19, 2008
    Date of Patent: January 24, 2012
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Ki-Chul Kim, Sung-Lyul Maeng, Sung-Jin Shin, Dae-Joon Kang
  • Patent number: 8017268
    Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
    Type: Grant
    Filed: January 12, 2006
    Date of Patent: September 13, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
  • Publication number: 20110135827
    Abstract: Provided is CNTs on which TiO2 is uniformly coated. The method includes: functionalizing CNTs with hydrophilic functional groups; mixing the CNTs functionalized with hydrophilic functional groups in a solution that contains with TiO2 precursors; refining TiO2 precursor-coated CNTs from the solution in which the CNTs and the TiO2 precursors are mixed; and heat treating the refined TiO2-coated CNTs. The TiO2-coated CNTs formed in this manner simultaneously retain the characteristics of CNTs and TiO2 nanowires, and thus, can be applied to solar cells, field emission display devices, gas sensors, or optical catalysts.
    Type: Application
    Filed: March 19, 2008
    Publication date: June 9, 2011
    Applicant: Electronic and Telecommunications Research Institute
    Inventors: Ki-Chul Kim, Sung-Lyul Maeng, Sang-Hyeob Kim, Rae-Man Park, Jong-Hyurk Park, Young-Jin Choi, Dae-Joon Kang
  • Publication number: 20100304501
    Abstract: Disclosed is a bio lab-on-a-chip. The bio lab-on-a-chip is provided on a piezoelectric thin film on a substrate, and includes a sensing unit to sense a bio signal and a fluidic control unit which controls a transfer of a microfluid adjacent to the sensing unit. Provided is also a method of fabricating the bio lab-on-a-chip. The method includes the steps of forming a piezoelectric thin film, forming a sensing unit to sense a bio signal of a microfluid on the piezoelectric thin film, and forming a fluidic control unit located adjacent to the sensing unit.
    Type: Application
    Filed: November 9, 2007
    Publication date: December 2, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICAATIONS RESEARCH INSTI
    Inventors: Dae Sik Lee, Rae Man Park, Sung Lyul Maeng, Moon Youn Jung, Seon Hee Park, Hyun Chul Yoon
  • Patent number: 7767501
    Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: August 3, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Doo-Hyeb Youn, Hyun-Tak Kim, Byung-Gyu Chae, Sung-Lyul Maeng, Kwang-Yong Kang
  • Publication number: 20100117058
    Abstract: Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.
    Type: Application
    Filed: February 26, 2008
    Publication date: May 13, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jong-Hyurk Park, Sung-Lyul Maeng, Rae-Man Park, Andrea C. Ferrari, Andrea Fasoli, Alan Colli
  • Publication number: 20100055016
    Abstract: Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials.
    Type: Application
    Filed: February 1, 2008
    Publication date: March 4, 2010
    Inventors: Sang-Hyeob Kim, Hye-Jin Myoung, Sung-Lyul Maeng, G.A.J. Amaratunga, Sunyoung Lee
  • Publication number: 20100035179
    Abstract: Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.
    Type: Application
    Filed: March 19, 2008
    Publication date: February 11, 2010
    Applicant: Electronics and Telecommunications Research Instit ute
    Inventors: Ki-Chul Kim, Sung-Lyul Maeng, Sung-Jin Shin, Dae-Joon Kang
  • Publication number: 20100018596
    Abstract: Provided is a micro fluidic transportation device capable of controlling discontinuous transportation of micro droplets using surface acoustic wave (SAW), and a method for manufacturing the same. The micro fluidic transportation device which includes: a substrate; a piezoelectric layer formed on the substrate; an inter digitated transducer (IDT) electrode formed on the piezoelectric layer for energy conversion by generating a surface acoustic wave (SAW); and a fluid passage formed on the piezoelectric thin layer.
    Type: Application
    Filed: December 4, 2007
    Publication date: January 28, 2010
    Inventors: Dae-Sik Lee, Sung-Lyul Maeng, Jack Luo, Bill Milne
  • Publication number: 20090286140
    Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
    Type: Application
    Filed: January 12, 2006
    Publication date: November 19, 2009
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
  • Publication number: 20090230428
    Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.
    Type: Application
    Filed: December 5, 2005
    Publication date: September 17, 2009
    Inventors: Doo-Hyeb Youn, Hyun-Tak Kim, Byung-Gyu Chae, Sung-Lyul Maeng, Kwang-Yong Kang
  • Publication number: 20080268656
    Abstract: Provided is a method of forming an oxide-based nano-structured material including growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano-structured material is annealed.
    Type: Application
    Filed: September 27, 2007
    Publication date: October 30, 2008
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sang Hyeob Kim, Sun Young Lee, Sung Lyul Maeng, Hey Jin Myoung
  • Patent number: 7408217
    Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.
    Type: Grant
    Filed: April 1, 2004
    Date of Patent: August 5, 2008
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Doo Hyeb Yoon, Hyun Tak Kim, Byung Gyu Chae, Kwang Yong Kang, Sung Lyul Maeng