Patents by Inventor Sung Lyul Maeng
Sung Lyul Maeng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8360753Abstract: Provided is a micro fluidic transportation device capable of controlling discontinuous transportation of micro droplets using surface acoustic wave (SAW), and a method for manufacturing the same. The micro fluidic transportation device which includes: a substrate; a piezoelectric layer formed on the substrate; an inter digitated transducer (IDT) electrode formed on the piezoelectric layer for energy conversion by generating a surface acoustic wave (SAW); and a fluid passage formed on the piezoelectric thin layer.Type: GrantFiled: December 4, 2007Date of Patent: January 29, 2013Assignee: Electronics and Telecommunications Research InstituteInventors: Dae-Sik Lee, Sung-Lyul Maeng, Jack Luo, Bill Milne
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Patent number: 8101337Abstract: Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.Type: GrantFiled: March 19, 2008Date of Patent: January 24, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Ki-Chul Kim, Sung-Lyul Maeng, Sung-Jin Shin, Dae-Joon Kang
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Patent number: 8017268Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.Type: GrantFiled: January 12, 2006Date of Patent: September 13, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
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Publication number: 20110135827Abstract: Provided is CNTs on which TiO2 is uniformly coated. The method includes: functionalizing CNTs with hydrophilic functional groups; mixing the CNTs functionalized with hydrophilic functional groups in a solution that contains with TiO2 precursors; refining TiO2 precursor-coated CNTs from the solution in which the CNTs and the TiO2 precursors are mixed; and heat treating the refined TiO2-coated CNTs. The TiO2-coated CNTs formed in this manner simultaneously retain the characteristics of CNTs and TiO2 nanowires, and thus, can be applied to solar cells, field emission display devices, gas sensors, or optical catalysts.Type: ApplicationFiled: March 19, 2008Publication date: June 9, 2011Applicant: Electronic and Telecommunications Research InstituteInventors: Ki-Chul Kim, Sung-Lyul Maeng, Sang-Hyeob Kim, Rae-Man Park, Jong-Hyurk Park, Young-Jin Choi, Dae-Joon Kang
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Publication number: 20100304501Abstract: Disclosed is a bio lab-on-a-chip. The bio lab-on-a-chip is provided on a piezoelectric thin film on a substrate, and includes a sensing unit to sense a bio signal and a fluidic control unit which controls a transfer of a microfluid adjacent to the sensing unit. Provided is also a method of fabricating the bio lab-on-a-chip. The method includes the steps of forming a piezoelectric thin film, forming a sensing unit to sense a bio signal of a microfluid on the piezoelectric thin film, and forming a fluidic control unit located adjacent to the sensing unit.Type: ApplicationFiled: November 9, 2007Publication date: December 2, 2010Applicant: ELECTRONICS AND TELECOMMUNICAATIONS RESEARCH INSTIInventors: Dae Sik Lee, Rae Man Park, Sung Lyul Maeng, Moon Youn Jung, Seon Hee Park, Hyun Chul Yoon
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Patent number: 7767501Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.Type: GrantFiled: December 5, 2005Date of Patent: August 3, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Doo-Hyeb Youn, Hyun-Tak Kim, Byung-Gyu Chae, Sung-Lyul Maeng, Kwang-Yong Kang
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Publication number: 20100117058Abstract: Provided is a multi-structure nanowire in which silicon nanowires are formed at both ends of a compound semi-conductor nanorod, and a method of manufacturing the multi-structure nanowire. The method includes providing a compound semiconductor nanorod; forming metal catalyst tips on both ends of the compound semiconductor nanorod; and growing silicon nanowires on both ends of the compound semiconductor nanorod where the metal catalyst tips are formed.Type: ApplicationFiled: February 26, 2008Publication date: May 13, 2010Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Jong-Hyurk Park, Sung-Lyul Maeng, Rae-Man Park, Andrea C. Ferrari, Andrea Fasoli, Alan Colli
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Publication number: 20100055016Abstract: Provided is a method of manufacturing oxide-based nano-structured materials using a chemical wet process, and thus, the method can be employed to manufacture oxide-based nano-structured materials having uniform composition and good electrical characteristics in large quantities, the method having a relatively simple process which does not use large growing equipment. The method includes preparing a first organic solution that comprises a metal, mixing the first organic solution with a second organic solution that contains hydroxyl radicals (—OH), filtering the mixed solution using a filter in order to extract oxide-based nano-structured materials formed in the mixed solution, drying the extracted oxide-based nano-structured materials to remove any remaining organic solution, and heat treating the dried oxide-based nano-structured materials.Type: ApplicationFiled: February 1, 2008Publication date: March 4, 2010Inventors: Sang-Hyeob Kim, Hye-Jin Myoung, Sung-Lyul Maeng, G.A.J. Amaratunga, Sunyoung Lee
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Publication number: 20100035179Abstract: Provided is a method of synthesizing an ITO electron beam resist and a method of forming an ITO pattern. The ITO electron beam resist is synthesized by dissolving indium chloride tetrahydrate and tin chloride dihydrate in 2-ethoxy ethanol. The method of forming an ITO pattern includes: forming an ITO electron beam resist film on a substrate, forming an ITO electron beam resist pattern by patterning the ITO electron beam resist film, and forming an ITO pattern by annealing the ITO electron beam resist pattern.Type: ApplicationFiled: March 19, 2008Publication date: February 11, 2010Applicant: Electronics and Telecommunications Research Instit uteInventors: Ki-Chul Kim, Sung-Lyul Maeng, Sung-Jin Shin, Dae-Joon Kang
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Publication number: 20100018596Abstract: Provided is a micro fluidic transportation device capable of controlling discontinuous transportation of micro droplets using surface acoustic wave (SAW), and a method for manufacturing the same. The micro fluidic transportation device which includes: a substrate; a piezoelectric layer formed on the substrate; an inter digitated transducer (IDT) electrode formed on the piezoelectric layer for energy conversion by generating a surface acoustic wave (SAW); and a fluid passage formed on the piezoelectric thin layer.Type: ApplicationFiled: December 4, 2007Publication date: January 28, 2010Inventors: Dae-Sik Lee, Sung-Lyul Maeng, Jack Luo, Bill Milne
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Publication number: 20090286140Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.Type: ApplicationFiled: January 12, 2006Publication date: November 19, 2009Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Hyun-Tak Kim, Doo-Hyeb Youn, Byung-Gyu Chae, Kwang-Yong Kang, Bong-Jun Kim, Yong-Wook Lee, Sun-Jin Yun, Jung-Wook Lim, Gyung-Ock Kim, Sung-Lyul Maeng
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Publication number: 20090230428Abstract: The abrupt metal-insulator transition device includes: an abrupt metal insulator transition material layer including an energy gap of less than or equal to 2 eV and holes within a hole level; and two electrodes contacting the abrupt metal-insulator transition material layer. Here, each of the two electrodes is formed by thermally treating a stack layer of a first layer formed on the abrupt metal-insulator transition material layer and comprising Ni or Cr, a second layer formed on the first layer and comprising In, a third layer formed on the second layer and comprising Mo or W, and a fourth layer formed on the third layer and comprising Au.Type: ApplicationFiled: December 5, 2005Publication date: September 17, 2009Inventors: Doo-Hyeb Youn, Hyun-Tak Kim, Byung-Gyu Chae, Sung-Lyul Maeng, Kwang-Yong Kang
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Publication number: 20080268656Abstract: Provided is a method of forming an oxide-based nano-structured material including growing a nano-structured material using a nano-nucleus having the same composition as the desired oxide-based nano-structured material. A solution is coated on a substrate, the solution including: an organic precursor containing M which is a transition metal or a semi metal; and an organic solvent in which the organic precursor is dissolved. A nano-nucleus having a composition of MxOy is formed on the substrate by annealing the substrate. A nano-structured material having a composition of MxOy is formed by growing the nano-nucleus while supplying a reaction precursor containing M into the nano-nucleus, and the nano-structured material is annealed.Type: ApplicationFiled: September 27, 2007Publication date: October 30, 2008Applicant: Electronics and Telecommunications Research InstituteInventors: Sang Hyeob Kim, Sun Young Lee, Sung Lyul Maeng, Hey Jin Myoung
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Patent number: 7408217Abstract: Provided is a metal-insulator-transition switching transistor with a gate electrode on a silicon substrate (back-gate structure) and a metal-insulator-transition channel layer of VO2 that changes from an insulator phase to a metal phase, or vice versa, depending on a variation of an electric field, and a method for manufacturing the same, whereby it is possible to fabricate a metal-insulator-transition switching transistor having high current gain characteristics and being stable thermally.Type: GrantFiled: April 1, 2004Date of Patent: August 5, 2008Assignee: Electronics and Telecommunications Research InstituteInventors: Doo Hyeb Yoon, Hyun Tak Kim, Byung Gyu Chae, Kwang Yong Kang, Sung Lyul Maeng