Abstract: A system is configured for reconfiguration of a Synchronization Signal Block (SSB) pattern. The system is configured for obtaining data including a configuration for a Synchronization Signal Block (SSB) transmission carrying a physical broadcast channel (PBCH), the configuration specifying, for an SSB of the configuration, resource elements (REs) allocated for transmitting a primary synchronization signal (PSS) to a user equipment (UE) and REs allocated for transmitting a secondary synchronization signal (SSS) to the UE. The system is configured for selecting a set of REs that are unused in the configuration for the SSB transmission, specifying a filling sequence for extending a synchronization signal or an SSB to the set of REs that are unused in the configuration of the SSB transmission, generating data including an enhanced configuration for the SSB transmission that includes the extended synchronization signal or the extended SSBs, and transmitting the SSB transmission using the enhanced configuration.

Abstract: A system is configured for reconfiguration of a Synchronization Signal Block (SSB) pattern. The system is configured for obtaining data including a configuration for a Synchronization Signal Block (SSB) transmission carrying a physical broadcast channel (PBCH), the configuration specifying, for an SSB of the configuration, resource elements (REs) allocated for transmitting a primary synchronization signal (PSS) to a user equipment (UE) and REs allocated for transmitting a secondary synchronization signal (SSS) to the UE. The system is configured for selecting a set of REs that are unused in the configuration for the SSB transmission, specifying a filling sequence for extending a synchronization signal or an SSB to the set of REs that are unused in the configuration of the SSB transmission, generating data including an enhanced configuration for the SSB transmission that includes the extended synchronization signal or the extended SSBs, and transmitting the SSB transmission using the enhanced configuration.

Abstract: An improved CCD image sensor which contains a plurality of photodetectors is provided with a transfer gate and uses a CCD as a scanner for reading signals, and having photo diodes which are connected consecutively to both the left and right sides of VCCD region and, in the parts without VCCD region, are disposed repeatedly parallel to each other separated by an interval of the width of the channel stop region. A 4 phase clock signal consisting of 4 fields is used for operation of said CCD image sensor. The resultant CCD image sensor has an increased photodetector area which can provide high resolution of video.

Abstract: The present invention relates to a structure and a method for fabrication of a CCD image sensor having a structure that a p-type epitaxial layer is formed on an n-type substrate to reduce a smear noise and an n-type region for controlling an OFD voltage which is disposed between an n-type substrate beneath an n-type photo diode and a p-type epitaxial layer and a p.sup.+ -type region for reducing the smear phenomenon which is deposed between an n-type substrate beneath an n-type BCCD and a p-type epitaxial layer. According to this improved structure and method, it can be fabricated of a CCD image sensor easily and rapidly and with reduced smear noise.

Abstract: A CCD image sensor having a plurality of VCCDs each formed in a zig-zag pattern in a vertical direction and a plurality of groups of first to fourth photodiodes, the first to fourth photodiodes of the respective groups being arranged respectively on the left and right sides of each of the VCCDs, so that an improvement in resolution of a picture can be made in the same chip size. The first photodiodes are arranged on the left sides of curved portions of each of the VCCD regions on odd horizontal scanning lines, the second photodiodes are arranged on the right sides of the curved portions of each of the VCCD regions on even horizontal scanning lines, the third photodiodes are arranged on the right sides of the curved portions of each of the VCCD regions on the odd horizontal scanning lines, and the fourth photodiodes are arranged on the left sides of the curved portions of each of the VCCD regions on the even horizontal scanning lines.

Abstract: A CCD image sensor includes a plurality of uniformly spaced photodiodes arranged in series in vertical and horizontal directions, a horizontal signal transferring region formed integrally in a zigzag from between adjacent sets of said plurality of horizontally arranged photodiodes, a signal flowing direction changing region formed under the last set of the plurality of horizontally arranged photodiodes and at output of the horizontal signal transferring region, a signal processing region for storing temporarily signal charges from the horizontal signal transferring region or the signal charges from the signal flowing direction changing region and then resetting the signal charges, and a sensing amplifier for sensing states of the signal charges being temporarily stored in the signal processing region and amplifying the sensed states of the signal charges by a predetermined amplification degree, whereby the CCD image sensor is capable of being driven by a small number of clock signals so that it can be applied

Abstract: A lamp lead with swaged indentations arranged around the circumference of the lead is disclosed. It has been discovered that the orientation of the locking indentation is significant in making a sound mechanical lock with the press seal of a lamp. By arranging the indentations around the lead, proper orientation of at least one of the indentations is always assured.

Abstract: A three-dimensional CCD image sensor comprising a plurality of N type light receiving regions being formed on a two-dimensional plane; a plurality of N type VCCD regions being formed under said plurality of N type light receiving regions; a series of arrangement that said plurality of N type light receiving regions and said plurality of N type VCCD regions are formed opposite to each other being configured in sequence at a desired interval; a desired area of a charge transfer path being formed between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions; and a P.sup.+ type charge transfer barrier being formed to a predetermined thickness at the remaining portion except where said charge transfer path is to be formed, between each of said plurality of N type light receiving regions and each of said plurality of N type VCCD regions.

Abstract: Thermoplastic elastomer having excellent processability and physical properties is provided by the composition:(A) monoolefin copolymer rubber: 20 to 90 parts by weight(B) crystalline poly-alpha olefin resin: 5 to 70 parts by weight(C) mineral oil-type oil: 5 to 100 parts by weight with respect to (A) plus (B)(D) polyolefin-type wax: 5 to 60 parts by weight with respect to (A) plus (B)(E) butyl rubber: 0.1 to 10 parts by weight with respect to (A) plus (B)in the extruder and then are dynamically partial cross-linked together with a certain amount of organic peroxide, cross-linking aids and coupling agents in the extruder.