Abstract: A drying device includes an automatically adjustable shield film, a shielding region which can be automatically set according to the extent that a shield film part opens and closes an opening, a time loss of shield film replacement can be reduced, and drying defects due to improper installation of the shield film can be improved.

Abstract: A positive electrode active material for a secondary battery includes a lithium composite transition metal oxide including nickel (Ni), cobalt (Co), and manganese (Mn), and at least one particle growth-promoting element selected from the group consisting of strontium (Sr), zirconium (Zr), magnesium (Mg), yttrium (Y), and aluminum (Al). The lithium composite transition metal oxide includes the nickel (Ni) in an amount of 65 mol % or more and the manganese (Mn) in an amount of 5 mol % or more based on a total amount of transition metals, and the positive active material has a single particle.

Abstract: The present disclosure provides a method for manufacturing a positive electrode for a secondary battery, the method including forming a positive electrode mixture layer including a positive electrode active material on a positive electrode current collector, and forming a metal oxide coating layer on the positive electrode mixture layer by atomic layer deposition, wherein the positive electrode active material includes lithium composite transition metal oxide particles and a boron-containing coating layer formed on the lithium composite transition metal oxide particles, and the lithium composite transition metal oxide particles include nickel (Ni), cobalt (Co), and manganese (Mn), wherein the nickel (Ni) is 60 mol % or greater of all metals excluding lithium.

Abstract: Provided is a near-infrared ray absorbing article. A near-infrared ray absorbing article of the present invention is capable of preventing a decrease in visible transmittance and near-infrared absorption due to the interaction between a plurality of organic materials forming light-absorbing layers. In addition, the near-infrared ray absorbing article of the present invention has the advantage of being able to be thinner. In addition, the near-infrared ray absorbing article of the present invention has the advantage of excellent mechanical properties such as strength and heat resistance.

Abstract: A flash memory system includes a flash memory for storing input data, and a memory controller controlling the flash memory, wherein the memory controller generates a first error correction code corresponding to the input data, and encrypts the first error correction code, and the flash memory includes a main area for storing the input data and a spare area for storing the encrypted first error correction code.

Abstract: A flash memory system includes a flash memory for storing input data, and a memory controller controlling the flash memory, wherein the memory controller generates a first error correction code corresponding to the input data, and encrypts the first error correction code, and the flash memory includes a main area for storing the input data and a spare area for storing the encrypted first error correction code.

Abstract: A refrigerant distributor is disclosed, for minimizing noise and providing refrigerant to each refrigerant tube uniformly, which includes a hollow body (11) in which a refrigerant flows; an inlet (12) provided at one end of the body, and through which the refrigerant flows in; and a plurality of discharge holes (13) provided for being in parallel at the other end of the body.

Abstract: Example embodiments relate to a semiconductor device and a method of fabricating the same. A dummy pattern may be formed on a semiconductor substrate. Source and drain regions may be formed on the semiconductor substrate at sides of the dummy pattern. A first metal silicide layer may be formed on the source and drain regions. A recess region may be formed in the semiconductor substrate under the dummy pattern. A gate insulating layer and a gate electrode may be formed in the recess region.

Abstract: The present invention prevents peak noise caused by a resonance frequency, and reduces an overall noise of the system by binding core teeth of a stator of a BLDC motor with a vibration prevention member. To do this, the present invention provides a brushless DC motor for a washing machine including a stator including a frame, a core in the frame, and a plurality of core teeth each extended outward from the frame and having a coil wound thereon, a rotor mounted to surround the core teeth, and rotatable when power is provided to the stator, and a vibration prevention member connected between the core teeth to bind the core teeth to each other, for prevention of vibration of the core teeth.

Abstract: Disclosed is an indoor unit of a packaged air conditioner including a cabinet having an inlet grill at a lower part and an outlet grill at an upper part so as to provide a circulation space of an indoor air, an evaporator established on a slant at an inner upper part of the cabinet to cool the indoor air with evaporation heat of a refrigerant, a cross-flow fan installed at an inner lower part of the cabinet to compulsorily inhale to exhale the indoor air toward the evaporator wherein the inhaled and exhaled indoor airs coexist at a same height, and a separator installed between a top of the cross-flow fan and the evaporator to prevent the inhaled and exhaled airs from intervening each other.

Abstract: The present invention prevents peak noise caused by a resonance frequency, and reduces an overall noise of the system by supporting core teeth of a stator of a BLDC motor with a supporting member.

Abstract: Disclosed is an indoor unit of a packaged air conditioner including a cabinet having an inlet grill at a lower part and an outlet grill at an upper part so as to provide a circulation space of an indoor air, an evaporator established on a slant at an inner upper part of the cabinet to cool the indoor air with evaporation heat of a refrigerant, a cross-flow fan installed at an inner lower part of the cabinet to compulsorily inhale to exhale the indoor air toward the evaporator wherein the inhaled and exhaled indoor airs coexist at a same height, and a separator installed between a top of the cross-flow fan and the evaporator to prevent the inhaled and exhaled airs from intervening each other.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.