Abstract: A polarizing plate and an optical display including the same are provided. The polarizing plate is composed of a display region and a non-display region surrounding the display region, and includes: a polarizer; and a bonding layer and a first polarizer protective film sequentially stacked on an upper surface of the polarizer. A light shielding layer includes a UV absorbent material and is embedded in the bonding layer to constitute at least a portion of the non-display region. The light shielding layer is formed on at least one surface of the first polarizer protective film.

Abstract: A method for producing a high-nickel positive electrode active material, a positive electrode active material produced thereby, and a positive electrode and a lithium secondary battery including the same is provided. The method includes preparing a lithium composite transition metal oxide having a nickel content of 80 atm % or greater among transition metals, washing the lithium composite transition metal oxide, and mixing the washed lithium composite transition metal oxide with an aluminum raw material and heat treating the mixture at a temperature of 650° C. to 690° C. to obtain a positive electrode active material having a surface portion doped with aluminum.

Abstract: A semiconductor device is provided. The semiconductor device includes an active pattern extending in a first horizontal direction, a plurality of lower nanosheets stacked on the active pattern and spaced apart from one another in a vertical direction, a separation layer on the plurality of lower nanosheets, a plurality of upper nanosheets stacked on the separation layer and spaced apart from one another in the vertical direction, a gate electrode extending on the active pattern in a second horizontal direction, the gate electrode surrounding each of the plurality of lower nanosheets, the separation layer and the plurality of upper nano sheets, and a first conductive layer between the gate electrode and each of a top surface and a bottom surface of the plurality of upper nanosheets. The first conductive layer is not between the gate electrode and sidewalls of the plurality of upper nanosheets.

Abstract: A flash memory system includes a flash memory for storing input data, and a memory controller controlling the flash memory, wherein the memory controller generates a first error correction code corresponding to the input data, and encrypts the first error correction code, and the flash memory includes a main area for storing the input data and a spare area for storing the encrypted first error correction code.

Abstract: A flash memory system includes a flash memory for storing input data, and a memory controller controlling the flash memory, wherein the memory controller generates a first error correction code corresponding to the input data, and encrypts the first error correction code, and the flash memory includes a main area for storing the input data and a spare area for storing the encrypted first error correction code.

Abstract: A refrigerant distributor is disclosed, for minimizing noise and providing refrigerant to each refrigerant tube uniformly, which includes a hollow body (11) in which a refrigerant flows; an inlet (12) provided at one end of the body, and through which the refrigerant flows in; and a plurality of discharge holes (13) provided for being in parallel at the other end of the body.

Abstract: Example embodiments relate to a semiconductor device and a method of fabricating the same. A dummy pattern may be formed on a semiconductor substrate. Source and drain regions may be formed on the semiconductor substrate at sides of the dummy pattern. A first metal silicide layer may be formed on the source and drain regions. A recess region may be formed in the semiconductor substrate under the dummy pattern. A gate insulating layer and a gate electrode may be formed in the recess region.

Abstract: The present invention prevents peak noise caused by a resonance frequency, and reduces an overall noise of the system by binding core teeth of a stator of a BLDC motor with a vibration prevention member. To do this, the present invention provides a brushless DC motor for a washing machine including a stator including a frame, a core in the frame, and a plurality of core teeth each extended outward from the frame and having a coil wound thereon, a rotor mounted to surround the core teeth, and rotatable when power is provided to the stator, and a vibration prevention member connected between the core teeth to bind the core teeth to each other, for prevention of vibration of the core teeth.

Abstract: Disclosed is an indoor unit of a packaged air conditioner including a cabinet having an inlet grill at a lower part and an outlet grill at an upper part so as to provide a circulation space of an indoor air, an evaporator established on a slant at an inner upper part of the cabinet to cool the indoor air with evaporation heat of a refrigerant, a cross-flow fan installed at an inner lower part of the cabinet to compulsorily inhale to exhale the indoor air toward the evaporator wherein the inhaled and exhaled indoor airs coexist at a same height, and a separator installed between a top of the cross-flow fan and the evaporator to prevent the inhaled and exhaled airs from intervening each other.

Abstract: The present invention prevents peak noise caused by a resonance frequency, and reduces an overall noise of the system by supporting core teeth of a stator of a BLDC motor with a supporting member.

Abstract: Disclosed is an indoor unit of a packaged air conditioner including a cabinet having an inlet grill at a lower part and an outlet grill at an upper part so as to provide a circulation space of an indoor air, an evaporator established on a slant at an inner upper part of the cabinet to cool the indoor air with evaporation heat of a refrigerant, a cross-flow fan installed at an inner lower part of the cabinet to compulsorily inhale to exhale the indoor air toward the evaporator wherein the inhaled and exhaled indoor airs coexist at a same height, and a separator installed between a top of the cross-flow fan and the evaporator to prevent the inhaled and exhaled airs from intervening each other.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.

Abstract: A method for fabricating a semiconductor device and a semiconductor formed by this method, the method including, the steps of sequentially forming a pad oxide film, a polysilicon film, and an antioxidation film on an active region of a semiconductor substrate such that a field region is exposed; etching an exposed portion of the surface of the substrate to a predetermined thickness to form a trench within the substrate; forming a first insulation film along the inner face of the trench by using an oxidation process; forming a stress buffer film on the entire surface of the resultant structure; forming a second insulation film on the stress buffer film such that the trench is sufficiently filled; making the second insulation film planar such that the remaining antioxidation film has a predetermined thickness on the active region of the substrate so as to form a shallow trench isolation within the trench; and sequentially removing the remaining antioxidation film, the polysilicon film, and the pad oxide film.