Abstract: A polyolefin thermoplastic elastomer composition for an airbag chute, includes a polypropylene, an olefin block copolymer, and a dendrimer as a material applied to a raw material of a passenger airbag chute. An olefin elastomer composite resin composition for an airbag chute includes 30-80 parts by weight of a polypropylene resin, 30-70 parts by weight of an olefin block copolymer, and 0.1-5 parts by weight of a dendrimer based on 100 parts by weight of the olefin elastomer composite resin composition. The olefin elastomer composite resin composition for an airbag chute, improves the dispersion of the elastomer by applying a high-flow elastomer and a low-flow polypropylene, and improves flowability and meltability characteristics without deteriorating physical properties by applying the dendrimer.

Abstract: Example embodiments of the inventive concepts relate to a reflection mask including an upper surface configured to reflect extreme ultraviolet EUV light, a lower surface opposite the upper surface, where the lower surface includes at least one alignment key. The reflection mask may include a conductive layer, a substrate on the conductive layer, a reflection layer on the substrate, and an absorption pattern on the reflection layer. The reflection layer may define the upper surface configured to reflect extreme ultraviolet EUV light. The absorption pattern may expose the upper surface of the reflection layer.

Abstract: A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Abstract: A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.

Abstract: In a reflecting mask, an apparatus for fixing the reflecting mask and a method of fixing the reflecting mask, voltages are applied to elements of a conductive pattern spaced apart from each other on a rear face of the reflecting mask to fix the reflecting mask by using electrostatic forces. A flatness of the fixed reflecting mask is measured, and the electrostatic forces provided to portions of the reflecting mask are selectively adjusted in accordance with a measured result obtained from the measuring part, such that the reflecting mask is horizontally fixed and is substantially flat.

Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

Abstract: A binary photomask with an improved resolution and a method of manufacturing the same are provided. The binary photomask may include a substrate, a transmission-prevention pattern formed on the substrate to define a circuit pattern, and a compensation layer configured to change light transmitted through the binary photomask based on a topology of the compensation layer and arranged on the transmission-prevention layer and/or the substrate.

Abstract: Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.

Abstract: A method of manufacturing an extreme ultra-violet lithography (EUVL) alternating phase-shift mask comprises preparing a substrate having a reflective layer, forming a light-shielding layer pattern on the reflective layer to cover part of the reflective layer while leaving a reflective region of the reflective layer exposed, forming a trench in a phase-shift region of the reflective layer by etching the reflective layer, and changing the physical structure of a non phase-shift region of the reflective region to lower its reflectivity with respect to extreme ultra-violet (EUV) light.

Abstract: A photomask ensures the transfer of a pattern having a uniform and desired CD onto a substrate from which an electronic device or the like is made. The photomask includes a transparent substrate, a light-shielding film on the front side of the substrate and defining a mask pattern of transmission regions dedicated for pattern formation, and an auxiliary pattern on the front side of the substrate that alters the intensity of the light beam passing through the substrate. After the mask pattern is formed, the photomask is tested to determine variations between the desired (target) CD and the CDs of the features of a pattern transcribed onto a test wafer using the photomask. A density function in which characteristics of the auxiliary pattern to be formed, e.g., the size, depth and/or pitch of recesses, is developed as a prediction of the intensity distribution of the light beam transmitted through the substrate once the auxiliary pattern is present at the front side of the substrate.

Abstract: A reflective photomask and a method of determining or optimizing thicknesses of layers of the reflective photomask are provided. The reflective photomask may include a substrate, a reflective layer, an absorptive pattern, and a spacer. The substrate may include a reflective region and an absorptive region, the reflective layer may be formed between the reflective and absorptive regions, the absorptive pattern may be formed on the reflective layer corresponding to the reflective region, and the spacer may be formed at an upper portion, lower portion, or inside of the reflective layer so as to correspond to the reflective region.

Abstract: A microscope includes optics configured to direct beams onto an object including a reflective material, a detector configured to receive a field spectrum formed by beams reflected by the object, and a calculator configured to reconstruct an image of the object from the field spectrum detected by the detector.

Abstract: A correction method and a system thereof automatically perform a measurement and an analysis for a photomask critical dimension (CD), to satisfy a desired CD uniformity and a desired mean-to-target (MTT) data. A correction for a portion where a CD error has occurred may be performed.

Abstract: A photo mask which enhances contrast and a method of fabricating the same are provided. The photo mask includes a transparent substrate and a light shielding layer pattern formed on the transparent substrate. The light shielding layer pattern includes apertures through which the transparent substrate is exposed. Depressions aligned with these apertures extend into the transparent substrate. Light exposed at an angle through the transparent layer would then pass into the depressions and reflect or diffuse from the sidewalls of the depressions and out through the apertures. The etching depth of the depressions is preferably equal to or less than a depth at which threshold intensity of the exposure light is saturated as the etching depth is increased. In another embodiment, the etching depth of the depressions is less than the wavelength of the exposure light.

Abstract: Provided are an extreme ultraviolet (EUV) exposure apparatus and a method of cleaning optical elements included in the exposure apparatus. The EUV exposure apparatus includes: a light source system generating an exposure beam that comprises an EUV beam during exposure of a substrate and generating a cleaning beam having a longer wavelength than the exposure beam during cleaning of an optical element; an optical system adjusting and patterning the EUV beam and the cleaning beam generated by the light source system; a chamber accommodating the light source system and the optical system; and a molecular oxygen supply unit in communication with the chamber.

Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

Abstract: In a reflecting mask, an apparatus for fixing the reflecting mask and a method of fixing the reflecting mask, voltages are applied to elements of a conductive pattern spaced apart from each other on a rear face of the reflecting mask to fix the reflecting mask by using electrostatic forces. A flatness of the fixed reflecting mask is measured, and the electrostatic forces provided to portions of the reflecting mask are selectively adjusted in accordance with a measured result obtained from the measuring part, such that the reflecting mask is horizontally fixed and is substantially flat.

Abstract: Provided are a method of correcting a critical dimension (CD) in a photomask and a photomask having a corrected CD using the method. The method may include providing a substrate that is transparent with respect to an incident light, forming shielding patterns on the substrate to form a photomask, detecting a CD error region of the shielding patterns, and forming a correction film to vary an intensity of the incident light in the CD error region to correct critical dimensions (CDs) of circuit patterns formed by the shielding patterns.

Abstract: The reflective photomask may include a substrate, a reflective layer formed on the substrate, an absorption pattern formed on the reflective layer and over a first portion of the substrate. A compensatory portion may be formed over at least a second portion of the substrate. The second portion is adjacent to the first portion, and the compensatory portion is thinner than the absorption pattern.