Abstract: Provided is a polyurethane polishing pad. More specifically, the present invention provides a polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer with a polyurethane matrix via radical polymerization and having no pores and gas bubbles. The polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer exhibits uniform dispersibility and reduced changes in hardness of the urethane pad due to heat and slurry, thereby resulting in no deterioration of polishing efficiency due to abrasion heat and solubility in the slurry upon polishing, and also enables a high-temperature polishing operation. Further, according to the present invention, the interpenetrating network structure leads to an improved polishing rate and abrasion performance, thereby significantly increasing the service life of the polishing pad.

Abstract: Disclosed herein is a plasma display panel in which afterimage is improved. The plasma display panel according to the present invention includes a panel unit having an upper plate and a lower plate, a frame that supports circuitry, and a conductive material formed between the panel unit and the frame. As such, a conductive material is formed on a bottom surface of a lower plate of a panel. Thus, charges introduced into the lower plate are properly controlled to improve the waveform stability of the panel. Also, a charge characteristic is improved to implement a stable operation. Accordingly, an afterimage time can be reduced. Further, a sheet of a low hardness and light weight is used. It is thus possible to absorb shock and noise of a PDP, accomplish light weight of the PDP and reduce the materials of the sheet.

Abstract: There is provided a chemical mechanical polishing (CMP) pad including a core of a polymer shell encapsulating a liquid organic material having one of a boiling point and a decomposition point of 130° C. or more in a polymer matrix, the CMP pad having open pores formed by the core on a polishing surface thereof, and a method of producing the CMP pad. The CMP pad having a high hardness and a high density improves polishing efficiency and flatness of a wafer and maintains a uniform size of the core, thereby producing pads having high polishing efficiency and stable polishing performance.

Abstract: Provided is a polyurethane polishing pad. More specifically, the present invention provides a polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer with a polyurethane matrix via radical polymerization and having no pores and gas bubbles. The polyurethane polishing pad having an interpenetrating network structure of a vinyl polymer exhibits uniform dispersibility and reduced changes in hardness of the urethane pad due to heat and slurry, thereby resulting in no deterioration of polishing efficiency due to abrasion heat and solubility in the slurry upon polishing, and also enables a high-temperature polishing operation. Further, according to the present invention, the interpenetrating network structure leads to an improved polishing rate and abrasion performance, thereby significantly increasing the service life of the polishing pad.

Abstract: A method of fabricating a semiconductor device wherein, in forming an overlay mark in a scribe line region between dies in a mask process, a semiconductor substrate is provided in which a contact plug is formed in a contact hole of a dielectric layer in the scribe line region and a trench is formed on the contact plug. A first metal layer for a metal line is formed in the contact plug and the dielectric layer through an ALD (Atomic Layer Deposition) method so that a step generated by the trench remains intact. A second metal layer for a metal line is formed on the first metal layer using a sputtering method so that the step remains intact.