Patents by Inventor Sung-Min RYU

Sung-Min RYU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor memory devices and memory systems including the same
    Patent number: 9390778
    Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: July 12, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Su-A Kim, Dae-Sun Kim, Dae-Jeong Kim, Sung-Min Ryu, Kwang-Il Park, Chul-Woo Park, Young-Soo Sohn, Jae-Youn Youn
  • SEMICONDUCTOR MEMORY DEVICES AND MEMORY SYSTEMS INCLUDING THE SAME
    Publication number: 20160064056
    Abstract: A semiconductor memory device includes a memory cell array, sub word-line drivers and power selection switches. The memory cell array includes memory cell rows coupled to word lines. The sub word line drivers are coupled to the word lines. The power selection switches are coupled to the sub word-line drivers. Each power selection switch controls a deactivation voltage level of a first word-line activated from the word-lines and an off-voltage level of a second word line adjacent to the first word line so that the deactivation voltage level and the off-voltage level have at least one of a ground voltage, a first negative voltage and a second negative voltage. The ground voltage, the first negative voltage and the second negative voltage have different voltage levels from each other.
    Type: Application
    Filed: July 13, 2015
    Publication date: March 3, 2016
    Inventors: SU-A KIM, Dae-Sun KIM, Dae-Jeong KIM, Sung-Min RYU, Kwang-II PARK, Chul-Woo PARK, Young-Soo SOHN, Jae-Youn YOUN