Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A substrate processing apparatus including a process chamber; a susceptor in the process chamber; and an inner edge ring and an outer edge ring on the susceptor, wherein the inner edge ring includes a semiconductor, the outer edge ring includes an insulator, an upper surface of the outer edge ring is at a higher level than an upper surface of the inner edge ring, and the outer edge ring has an overhang extending onto the inner edge ring.

Abstract: A plasma processing apparatus may include a lower electrode supporting a wafer; a focus ring surrounding an edge of the lower electrode and having a ring shape; and an edge ring disposed in a position lower than a position of the focus ring. The focus ring may include a lower region and an upper region disposed on the lower region, and the upper region increases in electrical conductivity as the upper region is closer to the lower region.

Abstract: A plasma process apparatus including a process chamber defined by an outer wall and a dielectric window, the dielectric window including a first dielectric material and covering an upper portion of the outer wall, the dielectric window including a top surface facing outside of the process chamber and a bottom surface facing insider of the process chamber, the dielectric window further including at least one magnetic-field control groove at the top surface of the dielectric window, and a coil antenna over the dielectric window and configured to receive RF power, the coil antenna including an inner coil and an outer coil, the inner coil over a center of the dielectric window, the outer coil over an edge of the dielectric window and surrounding the inner coil may be provided.

Abstract: A plasma process apparatus including a process chamber defined by an outer wall and a dielectric window, the dielectric window including a first dielectric material and covering an upper portion of the outer wall, the dielectric window including a top surface facing outside of the process chamber and a bottom surface facing insider of the process chamber, the dielectric window further including at least one magnetic-field control groove at the top surface of the dielectric window, and a coil antenna over the dielectric window and configured to receive RF power, the coil antenna including an inner coil and an outer coil, the inner coil over a center of the dielectric window, the outer coil over an edge of the dielectric window and surrounding the inner coil may be provided.