Abstract: An aerosol generating device includes: a holder configured to generate aerosols; and a cradle which displays, on the display, data obtained from the sensor and an indicator for activating a user interface, outputs through the user interface a plurality of pre-stored temperature profiles in response to a first user input of selecting the indicator, and in response to a second user input of selecting any one of the plurality of the pre-stored temperature profiles, transmits the selected temperature profile to the holder such that the holder controls a temperature profile used to heat an aerosol generating material based on the selected temperature profile.

Abstract: An embodiment of the present disclosure discloses tobacco material including: a center portion including a flavor material; and an outer portion including a tobacco mixture, wherein the outer portion surrounds the center portion.

Abstract: An aerosol generating device includes an accommodation portion configured to accommodate an aerosol generating article through an opening, a heater configured to heat the accommodation portion and move along a longitudinal direction of the accommodation portion; and a heater support that supports the heater and move the heater along the longitudinal direction of the accommodation portion, wherein the heater moves between a first position corresponding to a first point of the aerosol generating article and a second position corresponding to a second point of the aerosol generating article, and wherein the first position and the second position differ according to specifications of the aerosol generating article.

Abstract: An aerosol generating article includes an aerosol generator including a first aerosol generating material which does not include nicotine; a tobacco filler arranged adjacent to an end of the aerosol generator and including a second aerosol generating material including nicotine; a cooler arranged adjacent to an end of the tobacco filler and configured to cool aerosol; and a mouth piece arranged adjacent to an end of the cooler.

Abstract: An aerosol generating device includes a heater configured to heat an aerosol generating material to generate aerosol; a controller configured to: calculate a current flowing through the heater based on a predefined resistance of the heater and power supplied to the heater, measure the current flowing through the heater, and control the power supplied to the heater based on a difference between the calculated current and the measured current.

Abstract: According to one exemplary embodiment of the present disclosure, a light emitting diode system includes: a nitride-based multi-wavelength light emitting diode including a first semiconductor layer doped with an n-type material, a second semiconductor layer doped with a p-type material, and an active layer disposed between the first semiconductor layer and the second semiconductor layer and having a structure of an indium gallium nitride (InGaN)-based quantum well; and a control unit configured to adjust and apply at least one of a pulse width and a duty cycle of an injection current to the nitride-based multi-wavelength light emitting diode.

Abstract: Provided is a pressure-sensitive adhesive composition for a foldable display, more particularly, a pressure-sensitive adhesive composition for a foldable display which, by satisfying a specific range of storage modulus at high temperature as well as at low temperature and room temperature, not only allows excellent folding properties to be realized but also satisfies excellent adhesion, excellent heat resistance, and excellent recovery rate requirements at the same time.

Abstract: Provided is a pressure-sensitive adhesive composition for a foldable display, more particularly, a pressure-sensitive adhesive composition for a foldable display which, by satisfying a specific range of storage modulus for each frequency at a temperature of 50° C. or more as well as at low temperature and room temperature, not only allows excellent folding properties to be realized but also satisfies excellent adhesion, excellent heat resistance, and excellent recovery rate requirements at the same time.

Abstract: Provided is a light emitting diode. The light emitting diode includes a substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a conductor passing through the second semiconductor layer and the active layer to contact the first semiconductor layer.

Abstract: Provided is a light emitting diode. The light emitting diode includes a substrate, a first semiconductor layer on the substrate, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a conductor passing through the second semiconductor layer and the active layer to contact the first semiconductor layer.

Abstract: Provided is a pressure-sensitive adhesive composition for a foldable display, more particularly, a pressure-sensitive adhesive composition for a foldable display which, by satisfying a specific range of storage modulus at high temperature as well as at low temperature and room temperature, not only allows excellent folding properties to be realized but also satisfies excellent adhesion, excellent heat resistance, and excellent recovery rate requirements at the same time.

Abstract: Provided is a pressure-sensitive adhesive composition for a foldable display, more particularly, a pressure-sensitive adhesive composition for a foldable display which, by satisfying a specific range of storage modulus for each frequency at a temperature of 50° C. or more as well as at low temperature and room temperature, not only allows excellent folding properties to be realized but also satisfies excellent adhesion, excellent heat resistance, and excellent recovery rate requirements at the same time.

Abstract: A nitride-based semiconductor light emitting device having a structure capable of improving optical output performance, and methods of manufacturing the same are provided. The active layer may include a first barrier layer formed of InxGa(1-x)N (0.01?x?0.05) on a n-type semiconductor layer, a first diffusion barrier layer formed of InyGa(1-y)N (0?y<0.01) on the first barrier layer, and doped with an anti-defect agent including at least one of an N (nitrogen) element and a Si (silicon) element, a quantum well layer formed of InzGa(1-z)N (0.25?z?0.35) on the first diffusion barrier layer, a second diffusion barrier layer formed of InyGa(1-y)N (0?y<0.01) on the quantum well layer, and doped with an anti-defect agent including at least one of an N element and a Si element, and a second barrier layer formed of InxGa(1-x)N (0.01?x?0.05) on the second diffusion barrier layer.

Abstract: A semiconductor light-emitting device including an active layer is provided. The light-emitting device includes an active layer between an n-type semiconductor layer and a p-type semiconductor layer. The active layer includes a quantum well layer formed of Inx1Ga(1?x1)N, where 0<x1?1, barrier layers formed of Inx2Ga(1?x2)N, where 0?x2<1, on opposite surfaces of the quantum well layer, and a diffusion preventing layer formed between the quantum well layer and at least one of the barrier layers. Due to the diffusion preventing layer between the quantum well layer and the barrier layers in the active layer, the light emission efficiency increases.

Abstract: There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.

Abstract: There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.

Abstract: A semiconductor substrate includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer is formed of II-VI-group semiconductor material, III-V-group semiconductor material, or II-VI-group semiconductor material and III-V-group semiconductor material. At least one amorphous region and at least one crystalloid region are formed in the first semiconductor layer. The second semiconductor layer is formed on the first semiconductor layer and is crystal-grown from the at least one crystalloid region. A method of manufacturing a semiconductor substrate includes preparing a growth substrate; crystal-growing the first semiconductor layer on the growth substrate; forming the at least one amorphous region and the at least one crystalloid region in the first semiconductor layer; and forming a second semiconductor layer on the first semiconductor layer using the at least one amorphous region as a mask and the at least one crystalloid region as a seed.

Abstract: Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.

Abstract: A gallium nitride (GaN)-based compound semiconductor device having a structure improving a surface characteristic of a thin film growing on a substrate is provided. The GaN-based compound semiconductor device includes an AlxInyGa1?x?yN substrate (0?x?1, 0?y?1, and 0?x+y?1) whose surface inclines toward a predetermined direction at an off-angle of greater than 0° and less than 1° with respect to the (0001) plane, and a GaN-based compound semiconductor layer grown on the surface of the substrate.

Abstract: There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.