Patents by Inventor Sung-Nien Hsieh

Sung-Nien Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8692235
    Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: April 8, 2014
    Assignee: National Cheng Kung University
    Inventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li
  • Publication number: 20110227047
    Abstract: An organic photoelectric semiconductor device including organic group VA salts in an organic salt-containing layer and a method for manufacturing the same are provided. The organic photoelectric semiconductor device includes: a first electrode; an organic active layer disposed over the first electrode; an organic salt-containing layer disposed over the organic active layer, where the organic salt-containing layer includes quaternary group VA salts of cations represented by the following formula (I) or derivatives thereof and anions; and a second electrode, disposed over the organic salt-containing layer, where, X, R1, R2, R3 and R4 are defined the same as the specification. Accordingly, the present invention can enhance the transmission of electrons and thus enhances the performance of devices.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 22, 2011
    Applicant: National Cheng Kung University
    Inventors: Ten-Chin Wen, Sung-Nien Hsieh, Tzung-Fang Guo, Wei-Chou Hsu, Chen-Yan Li