Patents by Inventor Sung Qyu Lee

Sung Qyu Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7606132
    Abstract: Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: October 20, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Kibong Song, Eunkyoung Kim, Sung Qyu Lee, Kang Ho Park, Jun Ho Kim
  • Publication number: 20060027525
    Abstract: Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
    Type: Application
    Filed: October 12, 2005
    Publication date: February 9, 2006
    Inventors: Kibong Song, Eunkyoung Kim, Sung Qyu Lee, Kang Ho Park, Jun Ho Kim
  • Patent number: 6979406
    Abstract: Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
    Type: Grant
    Filed: December 26, 2002
    Date of Patent: December 27, 2005
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Kibong Song, Eunkyoung Kim, Sung Qyu Lee, Kang Ho Park, Jun Ho Kim
  • Publication number: 20050252882
    Abstract: Disclosed are a cantilever-type near-field probe capable of easily improving an optical throughput and being applied to a head of an optical data storage and a method of manufacturing the same. An oxide film is formed on a silicon substrate having dielectric films formed as a mask layer on upper and lower portions thereof, and a circular dielectric film formed on the upper mask layer and providing a function of a holder. A distal end of the probe has a parabolic structure by use of an effect of a bird's peak provided due to a difference of growth rate of the oxide film produced by the dielectric film, thereby forming the initial probe. After the dielectric film is removed from the initial probe, a bottom surface of the silicon substrate is removed, thereby providing the probe with the near-field aperture having a high throughput.
    Type: Application
    Filed: December 26, 2002
    Publication date: November 17, 2005
    Inventors: Kibong Song, Eunkyoung Kim, Sung Qyu Lee, Kang Ho Park, Jun Ho Kim