Abstract: A di-chromic device according to an embodiment of the present disclosure includes a base, a first conductivity type semiconductor region disposed on the base, a control portion disposed on the first conductivity type semiconductor region, a color region formed on the control portion, and a second conductivity type semiconductor region disposed on the color region, in which the control portion is configured to relieve strain in the color region, the color region includes a first color portion and a second color portion, and the first color portion includes a color material having a composition different from that of the second color portion.

Abstract: A red light emitting device according to an embodiment of the present disclosure includes: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, in which the first conductivity type semiconductor layer includes a plurality of protrusions on a surface thereof.

Abstract: A light emitting diode according to an embodiment of the present disclosure includes a first conductivity type semiconductor layer, an active region including a plurality of active layers, a pre-strained layer disposed between the first conductivity type semiconductor layer and the active region, and including a V-pit generation layer (VGL), and a second conductivity type semiconductor layer disposed on the active region, in which the VGL has a thickness within a range of 250 nm to 350 nm.

Abstract: A method for manufacturing a light emitting device includes preparing a substrate where a crystal growth surface has an a-plane or an m-plane; forming a buffer layer on the substrate; forming a semiconductor layer on the buffer layer; and separating the semiconductor layer from the substrate by removing the buffer layer.

Abstract: An embodiment of this invention relates to a method for manufacturing a light emitting device. The disclosed method for manufacturing a light emitting device includes the steps of: preparing a substrate wherein the crystal growth surface is a-plane or an m-plane; forming a buffer layer on said substrate; forming a semiconductor layer on said buffer layer, and separating said semiconductor layer from said substrate by removing said buffer layer.