Abstract: An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.

Abstract: The present invention relates to an oxide semiconductor thin film transistor and a manufacturing method thereof, and the manufacturing method of the oxide semiconductor thin film transistor includes: a first step for depositing and patterning a gate layer on a substrate to form a gate electrode; a second step for depositing a gate insulation layer on the gate electrode; a third step for depositing and patterning an oxide semiconductor on the gate insulation layer; and a fourth step for treating a plasma including fluorine (F) on the oxide semiconductor.

Abstract: An oxide semiconductor transistor according to an exemplary embodiment of the present invention includes: a substrate; a first gate electrode disposed on the substrate; a gate insulating layer disposed on the substrate and the first gate electrode; an oxide semiconductor layer disposed on the gate insulating layer; an etch stopper layer disposed on the oxide semiconductor layer; and a source electrode and a drain electrode disposed on the oxide semiconductor layer and the etch stopper layer and spaced apart from each other.