Abstract: Provided are quantum dots passivated by oligomers or polymers which are formed by a reaction of a first monomer having at least three thiol groups (—SH) at the terminal end with a second monomer having at least two functional groups at the terminal end that can react with the thiol groups, and a spacer group between the at least two functional groups.

Abstract: Provided are quantum dots passivated by oligomers or polymers which are formed by a reaction of a first monomer having at least three thiol groups (—SH) at the terminal end with a second monomer having at least two functional groups at the terminal end that can react with the thiol groups, and a spacer group between the at least two functional groups.

Abstract: A black photosensitive resin composition includes (A) an alkali soluble polyimide-polyamic acid copolymerization resin; (B) a multi-functional monomer; (C) a photopolymerization initiator; (D) a black colorant; and (E) a solvent, a photosensitive resin layer manufactured using the same, and a display device including the photosensitive resin layer.

Abstract: A black photosensitive resin composition includes (A) an alkali soluble polyimide-polyamic acid copolymerization resin; (B) a multi-functional monomer; (C) a photopolymerization initiator; (D) a black colorant; and (E) a solvent, a photosensitive resin layer manufactured using the same, and a display device including the photosensitive resin layer.

Abstract: A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.

Abstract: A method for patterning a substrate is provided, which comprises (a) providing a substrate; (b) applying a first layer comprising a first photo resist to the substrate; (c) applying a second layer comprising a second photo resist over the first layer; (d) patterning the second layer; and (e) inspecting the patterned second layer with an inspection tool; wherein at least one of the first and second layers comprises a contrasting agent which increases the contrast between the first and second layers to the inspection tool.

Abstract: Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.

Abstract: Coating compositions are provided that include a component that is a product of materials comprising an amine and an anhydride and/or an anhydride derivative. Compositions of the invention are particularly useful as an underlying antireflective coating composition (“ARC”) employed with an overcoated photoresist layer in the manufacture of microelectronic wafers and other electronic devices.

Abstract: The present invention includes polyacetal polymers and photoresist compositions that include the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm, particularly 157 nm.

Abstract: The present invention includes polyacetal polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm, particularly 157 nm.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-200 nm, particularly 157 nm. Particular polymers and photoresists of the invention include at least one electronegative group that reduces 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention contain a polymer that has fluorinated phenolic units and photoacid-labile groups. Resists of the invention can be effectively imaged at short wavelengths such as sub-200 nm, particularly 157 nm.

Abstract: The present invention includes polymers and photoresist compositions that comprise the polymers as a resin binder component. Photoresists of the invention include chemically-amplified positive-acting resists that can be effectively imaged at short wavelengths such as sub-300 nm, particularly 157 nm. Preferred polymers and photoresists include acid labile acetal or ketal groups that help degrade the polymer by hydrolysis. More preferred polymers include at least one electronegative group that reduces or avoids 157 nm absorbance of a wide spectrum of organic groups including aromatic groups such as phenolic moieties.