Abstract: Disclosed is a technique for switching from a master node to a secondary node in a communication system. A method of a first communication node may comprise: adding the first communication node as a primary secondary cell (PSCell) to a second communication node through dual connectivity (DC); generating a first user plane path for smart dynamic switching (SDS) and a first instance for supporting the first user plane path according to a request from the second communication node; transmitting information on the first user plane path and the first instance to a terminal; receiving user data based on the first user plane path from the terminal as the first instance; and transmitting the user data to a core network using the first user plane path.

Abstract: An aluminum pouch film for a secondary battery is disclosed. The aluminum pouch film includes an aluminum film layer; an outer resin layer deposited on one surface of the aluminum film layer; and an inner resin layer deposited on the other surface of the aluminum film layer, wherein the inner resin layer comprises a polyolefin resin, an ethylene vinyl alcohol copolymer (EVOH) and a maleic anhydride polypropylene (MAHPP) resin.

Abstract: A power module includes an upper substrate and a lower substrate, an upper chip, a lower chip, and a circuit board disposed across a space between the upper substrate and the lower chip and a space between the lower substrate and the upper chip so that the upper substrate and the lower substrate are vertically spaced from each other. The circuit board electrically connects the upper chip to the lower substrate while electrically connecting the lower chip to the upper substrate.

Abstract: A display device includes: a backlight unit, a camera hole penetrating the backlight unit, a camera in the camera hole, a liquid crystal panel on the backlight unit, the liquid crystal panel including a transparent portion on the camera hole, and at least one light-blocking member in the camera hole, the at least one light-blocking member being configured to reduce one or more of: light leakage from the camera hole and introduction of impurities into the camera hole.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device produced thereby. For example and without limitation, various aspects of this disclosure provide methods for manufacturing a semiconductor device, and semiconductor devices produced thereby, that comprise forming an interposer including a reinforcement layer.

Abstract: The present disclosure relates to a cathode active material for an all-solid-state battery with a controlled particle size and a method for preparing the same. In particular, the cathode active material includes lithium and a transition metal, wherein the cathode active material has a single peak in the range of 1 ?m to 10 ?m as a result of particle size distribution (PSD) analysis.

Abstract: A power module for a vehicle, includes: a first substrate including a first metal circuit disposed on a 1-1st surface, and a first spacer extending from the first metal circuit in a first direction; a second substrate spaced from and facing the first substrate in a second direction, and including a second metal circuit disposed on a 2-1st surface facing the 1-1st surface, and a second spacer extending from the second metal circuit in the second direction; and a semiconductor chip disposed between the first substrate and the second substrate, the first spacer and the second spacer extending toward each other.

Abstract: A passive cooling system for a nuclear reactor includes an energy release space in which a reactor vessel is accommodated, an energy absorbing space separated from the energy release space, and an energy transfer space above the energy absorbing space and configured to absorb and cool heat transferred from the reactor vessel and discharge the absorbed heat to an outside of the system through an outer wall thereof. The passive cooling system further includes a first cooling flow path configured to transfer the heat in the reactor vessel to the energy transfer space, a pressure balance pipe configured to transfer the pressure in the energy release space to the energy absorbing space therethrough, and a coolant spray pipe configured to transfer the cooling water in the energy absorbing space pressurized by the pressure balance pipe to the energy transfer space may be provided.

Abstract: Provided are a silicon nitride film etching composition, a method of etching a silicon nitride film using the same, and a manufacturing method of a semiconductor device. Specifically, a silicon nitride film may be stably etched with a high selection ratio relative to a silicon oxide film, and when the composition is applied to an etching process at a high temperature and a semiconductor manufacturing process, not only no precipitate occurs but also anomalous growth in which the thickness of the silicon oxide film is rather increased does not occur, thereby minimizing defects and reliability reduction.

Abstract: A sensing unit including first sensing electrodes arranged in a sensing area, second sensing electrodes electrically isolated from the first sensing electrodes, first identification patterns adjacent to the first sensing electrodes, and second identification patterns adjacent to the second sensing electrodes, in which a number of the first identification patterns is different from a number of the second identification patterns.

Abstract: A power module for a vehicle, includes: a first substrate including a first metal circuit disposed on a 1-1st surface, and a first spacer extending from the first metal circuit in a first direction; a second substrate spaced from and facing the first substrate in a second direction, and including a second metal circuit disposed on a 2-1st surface facing the 1-1st surface, and a second spacer extending from the second metal circuit in the second direction; and a semiconductor chip disposed between the first substrate and the second substrate and including a power pad and a signal pad, the first spacer and the second spacer extending toward each other, and the second spacer including a 2-1st spacer connected to the power pad and a 2-2nd spacer connected to the signal pad.

Abstract: Proposed is a detachable lighting device including lighting units. The positions of the lighting units are changeable along a mounting rail within an interior space. The number of the lighting units and the mounting positions of the lighting units are adjustable. Accordingly, occupants within the interior space adjust light distribution as desired by each occupant.

Abstract: Disclosed are a system and method for reselling a reserved instance, which creates earnings by purchasing a reserved instance from a reserved instance providing system, such as a cloud service system, and reselling the reserved instance to a client, and a recording medium in which a program for executing the method is written. The system purchases a reserved instance from a reserved instance providing system and resells the reserved instance to a client, and includes an instance usage prediction unit for predicting instance usage of a client using a machine learning model pre-trained in relation to the instance usage, a reserved instance purchase quantity determination unit for determining a reserved instance purchase quantity based on the instance usage, a reserved instance purchase unit for purchasing the reserved instance based on the reserved instance purchase quantity, and an instance reselling unit for reselling the purchased reserved instance to the client.

Abstract: One aspect of the present invention provides a compound in which a functional group capable of binding to a globulin Fc region or a physiologically active polypeptide is introduced at one end of a non-peptidic polymer and a functional group capable of a click reaction is introduced at the other end; a polypeptide conjugate in which a physiologically active polypeptide binds to one end of the compound; a physiologically active polypeptide conjugate in which a physiologically active polypeptide and an immunoglobulin Fc region bind to both ends thereof by using the compound as a linker; and methods for preparing the same compound, polypeptide conjugate, and physiologically active polypeptide conjugate.

Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

Abstract: A negative voltage switching device includes a first switching circuit configured to transmit a first negative voltage, a second switching circuit configured to transmit a second negative voltage, and a switching selection circuit configured to select one of the first switching circuit or the second switching circuit for transmitting one of the first negative voltage and the second negative voltage to an output terminal.

Abstract: The present invention relates to a film wrapping machine for a product packing device using a stretch film, including a frame having vertical bars extending upward and spaced apart from each other, a film clamping unit including a pair of suction pads which are moved in a direction of being spaced apart from each other in a state of adsorbing the stretch film so that a front end portion of the stretch film supplied from a film supply device is opened, and a plurality of clamps configured to grip the front end portion of the stretch film opened by the suction pads, receive the stretch film whose upper end is cut and bonded by the film supply device in a wrinkled state, and process the stretch film to be covered on a product in a process of lowering the vertical bars, and a controller which controls operation of the film clamping unit and the film supply device.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.

Abstract: A semiconductor device includes first and second active patterns extending in a first direction, a first epitaxial pattern on the first active pattern and adjacent to the second active pattern, a second epitaxial pattern on the second active pattern and adjacent to the first active pattern, an element separation structure separating the first and second active patterns between the first and second epitaxial patterns, and including a core separation pattern, and a separation side wall pattern on a side wall of the core separation pattern, and a gate structure extending in a second direction intersecting the first direction, on the first active pattern. An upper surface of the gate structure is on the same plane as an upper surface of the core separation pattern. The separation side wall pattern includes a high dielectric constant liner, which includes a high dielectric constant dielectric film including a metal.