Abstract: Disclosed herein is a method of controlling, by a voice guidance control device according to some embodiments of the present disclosure, a volume level of personalized voice guidance. The method includes: obtaining information on a distance between an occupant of a vehicle and a seat of the vehicle from a signal generated from the vehicle; and outputting voice guidance related to the occupant. A volume level of the voice guidance is adaptively determined based on the information on the distance between the occupant and the seat.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: An electroluminescent display apparatus may include a first semiconductor pattern including a first channel region and a first conductive region which is a region other than the first channel region, a first gate electrode overlapping the first channel region of the first semiconductor pattern with a first gate insulation layer therebetween, a first interlayer insulation layer covering the first semiconductor pattern, and the first gate electrode, a second semiconductor pattern disposed on the first interlayer insulation layer, the second semiconductor pattern including a second channel region and a second conductive region which is a region other than the second channel region, and a second gate electrode overlapping the second channel region of the second semiconductor pattern with a second gate insulation layer therebetween.

Abstract: An electroluminescent display apparatus may include a display panel including a plurality of pixels, a gate driving circuit driving scan lines and emission lines connected to the plurality of pixels, and a data driving circuit driving data lines connected to the plurality of pixels. A first pixel arranged in an nth (where n is a natural number) pixel row among the pixels included in the display panel of the electroluminescent display apparatus may include a light emitting device, a driving element, a plurality of switch elements, and a storage capacitor.

Abstract: Provided are a lithium-argyrodite ionic superconductor containing a halogen element and a method for preparing the same, wherein an argyrodite-type crystal structure can be maintained and lithium ion conductivity can be greatly improved by combining specific elements at a specific molar ratio.

Abstract: The present invention presents a method for manufacturing a negative electrode of a solid oxide cell in a three-dimensional structure by using a pressurization process. In addition, the present invention proposes a structure in which the entire interface of a solid oxide cell is manufactured on the manufactured three-dimensional negative electrode substrate, through various deposition methods, in a three-dimensional structure so as to maximize a reaction area.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: Disclosed is a method for infiltrating a porous structure with a precursor solution by means of humidification. The infiltration method with a precursor solution using moisture control comprises the steps of: (S1) providing a substrate having porous structures deposited thereon; (S2) depositing, by electrospraying, a precursor solution on the substrate having porous structures deposited thereon; (S3) humidifying the porous structures having the precursor solution deposited thereon; and (S4) sintering the humidified porous structures.

Abstract: Provided are a sulfide-based lithium-argyrodite ion superconductor containing multiple chalcogen elements and a method for preparing the same. More specifically, provided are a sulfide-based lithium-argyrodite ion superconductor containing multiple chalcogen elements and a method for preparing the same that are capable of significantly improving lithium ion conductivity by substituting a sulfur (S) element in a PS43- tetrahedron with a chalcogen element such as a selenium (Se) element, other than the sulfur (S) element, while maintaining an argyrodite-type crystal structure of a sulfide-based solid electrolyte represented by Li6PS5Cl.

Abstract: Disclosed is a method for infiltrating a porous structure with a precursor solution by means of humidification. The infiltration method with a precursor solution using moisture control comprises the steps of: (S1) providing a substrate having porous structures deposited thereon; (S2) depositing, by electrospraying, a precursor solution on the substrate having porous structures deposited thereon; (S3) humidifying the porous structures having the precursor solution deposited thereon; and (S4) sintering the humidified porous structures.

Abstract: The present invention presents a method for manufacturing a negative electrode of a solid oxide cell in a three-dimensional structure by using a pressurization process. In addition, the present invention proposes a structure in which the entire interface of a solid oxide cell is manufactured on the manufactured three-dimensional negative electrode substrate, through various deposition methods, in a three-dimensional structure so as to maximize a reaction area.

Abstract: Methods and apparatuses are provided for controlling a communication device. Log information related to a call is stored. It is determined whether the call is abnormally terminated. Information on a cause of call termination is output when the call is abnormally terminated. The call is abnormally terminated when the call termination does not occur through a termination request of a user.