Abstract: Systems, methods, and instrumentalities are disclosed for downlink resource allocation associated with a shared frequency band. A WTRU may receive resource allocation information associated with a component carrier and at least one carrier segment. The component carrier and the least one carrier segment may each comprise a plurality of resource block groups (RBG). At least two bitmaps may be associated with the resource allocation information. A size of a resource block group (RBG) of the component carrier and the at least one carrier segment may be based on a combined number of resource blocks (RB) of the component carrier and the one or more carrier segments divided by a 3GPP Rel-8/Rel-10 RBG size of the component carrier. The WTRU may determine at least one RBG allocated to the WTRU using the resource allocation information and may receive and decode the at least one RBG allocated to the WTRU.

Abstract: In a method for preparing a cathode of a secondary battery, a method for preparing a purified N-methyl pyrrolidinone (NMP), and a method for purifying a waste NMP, an inhibitor is added to prevent NMP from being decomposed to produce formaldehyde during the process. 1. The inhibitor may be a phenol-based antioxidant and/or an amine-based light stabilizer.

Abstract: An occupant customized seat control apparatus and method are provided. The method includes recognizing, by a camera, an occupant that approaches a vehicle, controlling a display to move based on a height of the recognized occupant, determining whether the recognized occupant is an infant, and when the recognized occupant is determined to be an infant, determining whether a booster seat needs to be controlled based on the height of the recognized occupant, and when at least one of the booster seat, a footrest, or the combination thereof needs to be controlled, converting a value of the recognized height into a booster seat actuator movement amount value, and controlling the booster seat to move based on the converted actuator movement amount value.

Abstract: Disclosed is a locking device having applied thereto a colorimetric sensor for detecting hazardous chemical leak. The locking device for a fitting, according to an embodiment, may include: a fitting locking portion made of a transparent material and provided to surround a fitting of a pipe or valve; and a colorimetric sensor which is disposed inside the fitting locking portion and which changes in color due to a hazardous chemical leaked from the fitting.

Abstract: A polyolefin-polystyrene multi-block copolymer and method of making the same is disclosed herein. In some embodiments, a polyolefin-polystyrene multi-block copolymer having a ratio of a loss modulus (E?) to a storage modulus (E?) satisfying the following conditions (a) and (b) over a temperature range of ?80° C. to 40° C., wherein the ratio is represented by a loss tangent (tan ?) value and is obtained by dynamic mechanical analysis (DMA), (a) a maximum of the tan ? value in a peak present in the temperature range is 0.20 to 0.35, and (b) a half-width of the peak ranges from 32.0° C. to 50.0° C. The polyolefin-polystyrene multi-block copolymer has a structure in which polystyrene chains are attached to both ends of a polyolefin chain.

Abstract: A system is configured to evaluate a semiconductor device. The system is for irradiating a test target semiconductor device arranged on a test board with a radiation test beam to measure an error value of the test target semiconductor device, wherein the test target semiconductor device includes a reference test target semiconductor device and a general test target semiconductor device, the system for evaluating the semiconductor device derives a reference error value of the reference test target semiconductor device and a reference error value of the general test target semiconductor device, and the reference error value of the general test target semiconductor device is able to be defined as a relative ratio to the reference error value of the reference test target semiconductor device.

Abstract: A wireless transmit/receiver unit (WTRU) is configured to receive sounding reference signal (SRS) configuration information. The SRS configuration information indicates a plurality of SRS configurations and indicates antenna transmission information. The WTRU is configured to receive SRS trigger information. The SRS trigger information comprises an indication to trigger transmission of one of the plurality of SRS configurations. The WTRU is configured to transmit a plurality of SRS associated with the indication in the SRS trigger information and based on the SRS configuration information. At least a first SRS of the plurality of SRS is transmitted over a first antenna port in a first symbol and at least a second SRS of the plurality of SRS is transmitted over a second antenna port in a second symbol.

Abstract: Disclosed are a colorimetric sensor for detecting harmful gas leakage in a product manufacturing process and a method for manufacturing the colorimetric sensor. The colorimetric sensor according to an embodiment may comprise: a colorimetric composition formed such that a dye including a metal component of which the own color changes when reacting with a harmful gas is bound to submicron fibers in the form of fine particles; and an adhesive band of a mesh structure to which the colorimetric composition is bound.

Abstract: One or more embodiments of the present disclosure provide a color conversion panel including a substrate, a bank on the substrate, defining openings, and including a light-blocking area including black pigment on an upper portion thereof, a concentration of the black pigment increasing in a direction away from the substrate, and a color conversion layer and a transmission layer respectively in the openings.

Abstract: Provided is a 3D printer having a residual powder removal device, including: a cabinet configured to form an exterior and protect a plurality of parts embedded therein, a chamber configured to form a printing space where a 3D part is formed by being irradiated with a laser from a laser irradiator inside the cabinet, a concentration measurer configured to measure a concentration of metal powder scattered inside the chamber, a powder transfer unit configured to transfer the metal powder from inside the chamber, and a residual powder removal device configured to spray an inert gas into the chamber to forcibly scatter cohered metal powder, discharge the metal powder scattered inside the chamber to the outside along with the inert gas, and cause the metal powder to pass through a filter assembly so that the metal powder is filtered and the residual metal powder is removed from inside the chamber.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: An electroluminescent display apparatus may include a first semiconductor pattern including a first channel region and a first conductive region which is a region other than the first channel region, a first gate electrode overlapping the first channel region of the first semiconductor pattern with a first gate insulation layer therebetween, a first interlayer insulation layer covering the first semiconductor pattern, and the first gate electrode, a second semiconductor pattern disposed on the first interlayer insulation layer, the second semiconductor pattern including a second channel region and a second conductive region which is a region other than the second channel region, and a second gate electrode overlapping the second channel region of the second semiconductor pattern with a second gate insulation layer therebetween.

Abstract: An electroluminescent display apparatus may include a display panel including a plurality of pixels, a gate driving circuit driving scan lines and emission lines connected to the plurality of pixels, and a data driving circuit driving data lines connected to the plurality of pixels. A first pixel arranged in an nth (where n is a natural number) pixel row among the pixels included in the display panel of the electroluminescent display apparatus may include a light emitting device, a driving element, a plurality of switch elements, and a storage capacitor.

Abstract: Provided are a lithium-argyrodite ionic superconductor containing a halogen element and a method for preparing the same, wherein an argyrodite-type crystal structure can be maintained and lithium ion conductivity can be greatly improved by combining specific elements at a specific molar ratio.

Abstract: The present invention presents a method for manufacturing a negative electrode of a solid oxide cell in a three-dimensional structure by using a pressurization process. In addition, the present invention proposes a structure in which the entire interface of a solid oxide cell is manufactured on the manufactured three-dimensional negative electrode substrate, through various deposition methods, in a three-dimensional structure so as to maximize a reaction area.

Abstract: Disclosed is a display device including a substrate including display and non-display areas, a first thin-film transistor located in the non-display area, and second and third thin-film transistors located in the display area. The first thin-film transistor includes a first semiconductor pattern, a first gate electrode overlapping the first semiconductor pattern, and first source and first drain electrodes connected to the first semiconductor pattern. The second thin-film transistor includes second and third semiconductor patterns including a first oxide semiconductor, a second gate electrode overlapping the second semiconductor pattern, a third gate electrode overlapping the third semiconductor pattern, and second source and second drain electrodes connected to the second and third semiconductor patterns.

Abstract: Disclosed is a method for infiltrating a porous structure with a precursor solution by means of humidification. The infiltration method with a precursor solution using moisture control comprises the steps of: (S1) providing a substrate having porous structures deposited thereon; (S2) depositing, by electrospraying, a precursor solution on the substrate having porous structures deposited thereon; (S3) humidifying the porous structures having the precursor solution deposited thereon; and (S4) sintering the humidified porous structures.

Abstract: Provided are a sulfide-based lithium-argyrodite ion superconductor containing multiple chalcogen elements and a method for preparing the same. More specifically, provided are a sulfide-based lithium-argyrodite ion superconductor containing multiple chalcogen elements and a method for preparing the same that are capable of significantly improving lithium ion conductivity by substituting a sulfur (S) element in a PS43- tetrahedron with a chalcogen element such as a selenium (Se) element, other than the sulfur (S) element, while maintaining an argyrodite-type crystal structure of a sulfide-based solid electrolyte represented by Li6PS5Cl.

Abstract: Disclosed is a method for infiltrating a porous structure with a precursor solution by means of humidification. The infiltration method with a precursor solution using moisture control comprises the steps of: (S1) providing a substrate having porous structures deposited thereon; (S2) depositing, by electrospraying, a precursor solution on the substrate having porous structures deposited thereon; (S3) humidifying the porous structures having the precursor solution deposited thereon; and (S4) sintering the humidified porous structures.