Abstract: Disclosed is a bulk block for manufacturing a prosthesis having high aesthetics and processability required for one-day dental prosthetic materials, which is a dental composite bulk block comprising a glass ceramic matrix and a polymer, wherein the glass ceramic matrix consists of an amorphous glass matrix and a crystalline phase dispersed in the glass matrix, the crystalline phase comprises as a main crystalline phase at least one selected from a leucite crystalline phase and a lithium disilicate crystalline phase, and has an average particle diameter of 0.01-1.0 ?m, and the polymer is included in an amount of 20-40 wt % with respect to the weight of the total bulk block. The bulk block has the advantages of improved mechanical properties, being capable of preventing microleakage, exhibiting excellent aesthetics, and enabling machining.

Abstract: An uplink transmission method performed by a terminal includes: receiving, from a base station, at least one DCI for allocating first uplink transmission and second uplink transmission; performing a first LBT procedure for the first uplink transmission, and performing the first uplink transmission when the first LBT procedure is successful; and performing a second LBT procedure for the second uplink transmission, and performing the second uplink transmission when the second LBT procedure is successful, wherein the first uplink transmission and the second uplink transmission are consecutively performed with a time interval longer than a predetermined time.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of a terminal may comprise: receiving, from a base station, configuration information of uplink reference signal (UL RS) for two or more serving cells; transmitting a first UL RS to the base station based on the configuration information in a first cell of the two or more serving cells; and transmitting a second UL RS to the base station based on the configuration information in a second cell of the two or more serving cells.

Abstract: A method by which a terminal operating in an unlicensed band transmits a signal includes the steps of: receiving, from a base station, configuration information about a carrier; receiving configuration information for configuring N (where N is an integer) guard band(s) for some frequency domains of the carrier; and transmitting a signal to the base station by using a first frequency domain of a bandwidth part belonging to the carrier, wherein the first frequency domain can be a domain excluding the N guard band(s) from the frequency domain of the bandwidth part.

Abstract: A 3D printer according to an embodiment includes a liquid material supply unit provided with an ejection hole, for ejecting the liquid material upward, and a storage part, which is connected to the ejection hole and in which the ejected liquid material is stored, a liquid layer-forming unit that moves the liquid material, stored in the storage part, to a work holder, which is a region irradiated with a shaping beam, and forms a liquid layer for 3-dimensional shaping, and a 3-dimensional shaping unit which performs 3-dimensional shaping by irradiating, with the shaping beam, the liquid layer formed on the work holder.

Abstract: Disclosed are various methods for transmitting or receiving data or control information having high reliability conditions. A method for operating a terminal which transmits uplink control information (UCI) includes: a step of generating UCI; a step of comparing the priority of an uplink (UL) control channel for the transmission of the UCI with the priority of a UL data channel when some symbols of the UL control channel and the UL data channel overlap; and a step of selecting the UL channel having a higher priority among the UL control channel and the UL data channel, and transmitting the UCI to a base station through the selected UL channel.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: There is provided a method of preparing a photoelectrochemical and electrochemical electrode catalyst, the method including preparing a metal oxide-based electrode, introducing a phosphate layer on a surface of the metal oxide-based electrode; and converting the phosphate layer into an oxyhydroxide layer by performing electrochemical activation on the phosphate layer. The efficiency of selective oxidation reaction of ammonia in wastewater may be improved.

Abstract: The present invention relates to a binding molecule that binds to SARS-coronavirus-2 (SARS-CoV-2). More particularly, the binding molecule of the present invention has strong ability to bind to a spike protein (S protein) on the surface of SARS-coronavirus-2 and high neutralizing activity against SARS-coronavirus-2 and is thus very useful in the diagnosis, prevention or treatment of SARS-coronavirus infection (COVID-19).

Abstract: A semiconductor memory device, and a method of manufacturing the semiconductor memory device, includes a first source layer, a second source layer on the first source layer, a stack on the second source layer, a channel structure passing through the stack and the second source layer, and a common source line passing through the stack and the second source layer. The second source layer includes an air gap and a conductive layer surrounding the air gap.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.

Abstract: The technology relates to a semiconductor device and a method for manufacturing the semiconductor device. According to the technology, a method for manufacturing a semiconductor device may comprise forming a gapfill target structure on a semiconductor substrate, the gapfill target structure including a horizontal recess parallel with the semiconductor substrate and having a first surface and a vertical slit extending from the horizontal recess and having a second surface perpendicular to the semiconductor substrate, removing a native oxide from the first surface to form a pre-cleaned first surface, forming, in-situ, a first semiconductor material on the pre-cleaned first surface and forming a second semiconductor material on the first semiconductor material.

Abstract: A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

Abstract: A method of calculating depth information for a three-dimensional (3D) image includes generating a pattern based on the value of at least one cell included in a two-dimensional (2D) image, projecting the pattern, capturing a reflected image of the pattern, and calculating depth information based on the reflected image of the pattern.

Abstract: When a three-dimensional image of a specific subject is acquired by means of an infrared camera and an external light (for example, external light such as sunlight at the time of outdoor photography) having a relatively large intensity exists, it is difficult to acquire the image. To this end, the present invention proposes an electronic device for reducing a current peak by adaptively changing optical power and an exposure time of an infrared camera according to the intensity of external light.

Abstract: A semiconductor device includes a stacked structure, openings passing through stacked structure, semiconductor patterns formed over inner walls of the openings, liner layers formed in the openings over the semiconductor patterns, and gap-fill insulating layers formed over the liner layers to fill the openings, wherein each of the gap-fill insulating layers seals an upper portion of the opening and includes at least one air gap.