Abstract: Disclosed is an image sensor package and a method for manufacturing the same. The image sensor package comprises an image sensor die, a substrate, a support wall having screw threads on the outer peripheral surface thereof and a mount into which a barrel including a plurality of lenses and an infrared blocking glass is mounted. The screw threads formed on the outer peripheral surface of the support wall are engaged with those formed on the inner peripheral surface of the mount. At least one passive element is provided on the substrate at the outer peripheral side of the support wall, thereby increasing the packaging density of the image sensor package.

Abstract: A semiconductor package and method of producing the same has a semiconductor die having a first face and a second face. A coating material is coupled to the second face of the semiconductor die. A substrate having a cavity is provided wherein the semiconductor die is placed within the cavity. An encapsulant is used to encapsulate the second face of the semiconductor die placed in the cavity. Connection members are provided to couple the semiconductor die and the substrate in order to transfer signals between the semiconductor die and the substrate. Terminal members are couple to the substrate to connect the semiconductor package to an external device. In the semiconductor package, a thermal expansion coefficient of the coating material C and a thermal expansion coefficient of the encapsulant E should be approximately equal in value in order to limit the problems associated with warpage.

Abstract: A radiation-curable anti-reflective coating is disclosed. The coating may be deposited on a substrate by spinning, dipping or rolling. The anti-reflective coating may have two layers in which case the anti-reflective coating has a V-shaped reflectance pattern in the visible wavelength spectrum. The anti-reflective coating may have three layers in which case the anti-reflective coating has a broadband reflectance pattern in the visible wavelength spectrum.

Abstract: A radiation-curable anti-reflective coating is disclosed. The coating may be deposited on a substrate by spinning, dipping or rolling. The anti-reflective coating may have two layers in which case the anti-reflective coating has a V-shaped reflectance pattern in the visible wavelength spectrum. The anti-reflective coating may have three layers in which case the anti-reflective coating has a broadband reflectance pattern in the visible wavelength spectrum.

Abstract: An electrical substrate useful for semiconductor packages is disclosed. The electrical substrate includes a core insulative layer. A first surface of the insulative layer has circuit patterns thereon. Some of the circuit patterns are stepped in their heights from the first surface, in that a first subportion of the circuit pattern, including a ball land, extends further from the first surface than a second subportion of the same circuit pattern, and also extends further from the first surface than a ball land of other circuit patterns. Accordingly, solder balls fused to the ball lands of the stepped circuit patterns extend further from the first surface than same-size solder balls fused to the ball lands of the non-stepped circuit patterns, thereby circumventing electrical connectivity problems that may arise from warpage of the electrical substrate.

Abstract: A semiconductor package has a substrate comprising a resin layer of an approximate planar plate, a cavity passing through the resin layer vertically at a center area thereof, a plurality of electrically conductive patterns formed at a bottom surface of the resin layer, and a conductive plan. An adhesive layer of a predetermined thickness is formed at an upper part of an inside of the cavity. A semiconductor die is positioned inside the cavity of the substrate and has a plurality of bond pads formed at a bottom surface thereof, a bottom surface of the adhesive layer being bonded to a top surface thereof. A plurality of conductive wires for electrically connecting the bond pads of the semiconductor die to the electrically conductive patterns are formed at a bottom surface of the substrate. An encapsulant is used for covering the semiconductor die formed at the lower part of the adhesive layer, the conductive wires and the cavity.

Abstract: Coating solutions having anti-reflective and anti-static properties, a coating derived therefrom, a substrate coated with the coating and methods for their preparation. A coating includes a sol-gel alkoxide polymeric material and a conductive colloidal metal compound material.

Abstract: Coating solutions having anti-reflective and anti-static properties, a coating derived therefrom, a substrate coated with the coating and methods for their preparation. A coating includes a sol-gel alkoxide polymeric material and a conductive colloidal metal compound material.

Abstract: A radiation-curable anti-reflective coating is disclosed. The coating may be deposited on a substrate by spinning, dipping or rolling. The anti-reflective coating may have two layers in which case the anti-reflective coating has a V-shaped reflectance pattern in the visible wavelength spectrum. The anti-reflective coating may have three layers in which case the anti-reflective coating has a broadband reflectance pattern in the visible wavelength spectrum.

Abstract: Coating solutions having anti-reflective and anti-static properties, a coating derived therefrom, a substrate coated with the coating and methods for their preparation. A coating includes a sol-gel alkoxide polymeric material and a conductive colloidal metal compound material.

Abstract: Coating solutions having anti-reflective and anti-static properties, a coating derived therefrom, a substrate coated with the coating and methods for their preparation. A coating includes a sol-gel alkoxide polymeric material and a conductive colloidal metal oxide material.

Abstract: A composition for a transparent conductive layer, a transparent conductive layer formed of the composition, and a method for forming the transparent conductive layer. The composition comprises a metal (M.sub.1) particle, a binding agent and a solvent, wherein the metal (M.sub.1) particle has an average particle diameter of 10.about.30 nm and is at least one selected from the group consisting of gold (Au), silver (Ag), platinum (Pt), copper (Cu), nickel (Ni), lead (Pb), cobalt (Co), rhodium (Rh), ruthenium (Ru), palladium (Pd) and tin (Sn), and wherein the binding agent is at least one compound selected from the group consisting of polypyrrole, polyvinylpyrrolidone, polyvinylalcohol and silicon alkoxide oligomer. Therefore, the transparent conductive layer which is excellent in conductivity and transmittance can be formed by a low-temperature sintering process.