Patents by Inventor SUNG SU BYUN

SUNG SU BYUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having structure for improving voltage drop and device including the same
    Patent number: 10249569
    Abstract: A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.
    Type: Grant
    Filed: September 29, 2017
    Date of Patent: April 2, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sung Su Byun
  • SEMICONDUCTOR DEVICE HAVING STRUCTURE FOR IMPROVING VOLTAGE DROP AND DEVICE INCLUDING THE SAME
    Publication number: 20180025984
    Abstract: A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.
    Type: Application
    Filed: September 29, 2017
    Publication date: January 25, 2018
    Inventor: SUNG SU BYUN
  • Semiconductor device having structure for improving voltage drop and device including the same
    Patent number: 9799604
    Abstract: A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.
    Type: Grant
    Filed: July 13, 2016
    Date of Patent: October 24, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Sung Su Byun
  • SEMICONDUCTOR DEVICE HAVING STRUCTURE FOR IMPROVING VOLTAGE DROP AND DEVICE INCLUDING THE SAME
    Publication number: 20170018504
    Abstract: A semiconductor device includes a semiconductor substrate and a plurality of metal layers above the semiconductor substrate. A first of the metal layers includes a plurality of first power rails which extend in a first direction and provide a first voltage, a plurality of second power rails which extend in the first direction and provide a second voltage, and a first conductor which is integral with one end of each of the first power rails and extends in a second direction. The first direction is perpendicular to the second direction. The first voltage is one of a ground voltage and a power source voltage and the second voltage is the other voltage.
    Type: Application
    Filed: July 13, 2016
    Publication date: January 19, 2017
    Inventor: SUNG SU BYUN