Abstract: A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on and electrically connected to the first electrode and the second electrode, respectively. A substrate is disposed adjacent to the support structure, wherein each of the first and second bulk electrodes includes an upper region and a lower region with the upper regions of the first and second bulk electrodes being separated from each other by a first distance. The substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance. The second distance is greater than the first distance.

Abstract: Disclosed herein is a light emitting device. The light emitting device is provided to include a light emitting structure, a first electrode pad, a second electrode pad and a heat dissipation pad, and a substrate on which the light emitting diode is mounted. The substrate includes a base; an insulation pattern formed on the base; and a conductive pattern disposed on the insulation pattern. The base includes a post and a groove separating the post from the conductive pattern. An upper surface of the post is placed lower than an upper surface of the conductive pattern, the heat dissipation pad contacts the upper surface of the post, and the first electrode pad and the second electrode pad contact the conductive pattern. With this structure, the light emitting device has excellent properties in terms of electrical stability and heat dissipation efficiency.

Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.

Abstract: Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light emitting structure disposed on the base; and a plurality of second contact electrodes disposed between the base and the light emitting structure, wherein the base includes at least two bulk electrodes electrically connected to the light emitting structure and an insulation support disposed between the bulk electrodes and enclosing the bulk electrodes, the insulation support and the bulk electrodes each including concave parts and convex parts engaged with each other on surfaces facing each other, and the convex parts including a section in which a width thereof is changed in a protrusion direction.

Abstract: Exemplary embodiments provide a light emitting diode and a method for manufacturing the same. The light emitting diode includes a light emitting structure, a plurality of holes formed through a second conductive type semiconductor layer and an active layer such that a first conductive type semiconductor layer is partially exposed therethrough, and a first electrode and a second electrode electrically connected to the first conductive type semiconductor layer and the second conductive type semiconductor layer, respectively, while being insulated from each other. The second electrode includes openings corresponding to the plurality of holes, a plurality of unit electrode layers separated from each other, and at least one connection layer electrically connecting at least two unit electrode layers to each other. The first electrode forms ohmic contact with the first conductive type semiconductor layer through the plurality of holes and partially covers the light emitting structure.

Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.

Abstract: Disclosed is a mobile terminal having a round external speaker. The round external speaker can be easily and simply mounted on the mobile terminal without a separate mounting unit by inserting a mounting protrusion portion of the mobile terminal into a mounting groove portion.

Abstract: Disclosed is a mobile terminal having a round external speaker. The round external speaker can be easily and simply mounted on the mobile terminal without a separate mounting unit by inserting a mounting protrusion portion of the mobile terminal into a mounting groove portion.