Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus includes: a chamber in which a process for a substrate is performed; a showerhead installed in the chamber to inject a reaction gas toward the substrate; and a susceptor installed below the showerhead to support the substrate. Here, the showerhead includes: a showerhead main body including an inner space to which the reaction gas is supplied from the outside and a plurality of injection holes configured to inject the reaction gas while communicating with the inner space; an inflow plate installed in the inner space to divide the inner space into an inflow space and a buffer space and including a plurality of inflow holes configured to allow the inflow space and the buffer space to communicate with each other; and a plurality of adjustment plates installed on the inflow holes in a movable manner, respectively, and configured to restrict movement of the reaction gas from the inflow space to the buffer space.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same.

Abstract: According to an embodiment of the present invention, a substrate processing apparatus includes: a chamber in which a process for a substrate is performed; a showerhead installed in the chamber to inject a reaction gas toward the substrate; and a susceptor installed below the showerhead to support the substrate. Here, the showerhead includes: a showerhead main body including an inner space to which the reaction gas is supplied from the outside and a plurality of injection holes configured to inject the reaction gas while communicating with the inner space; an inflow plate installed in the inner space to divide the inner space into an inflow space and a buffer space and including a plurality of inflow holes configured to allow the inflow space and the buffer space to communicate with each other; and a plurality of adjustment plates installed on the inflow holes in a movable manner, respectively, and configured to restrict movement of the reaction gas from the inflow space to the buffer space.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.

Abstract: Disclosed are a substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; and a heat dissipating member including a contact surface being in thermal contact with the second temperature region. The heat dissipating member further includes an opening corresponding to the first temperature region. The heat dissipating member formed in a ring shape, in which the opening is surrounded with the contact surface, and the contact surface of the heat dissipating member makes thermal contact with the lower surface of the susceptor.

Abstract: A substrate processing method in which processes with respect to substrates are performed comprises: stacking the substrates on a substrate holder disposed in a staking space formed within a lower chamber through a passage formed in a side of the lower chamber, exhausting the stacking space through an auxiliary exhaust port connected to the stacking space, moving the substrate holder into an external reaction tube closing an opened upper side of the lower chamber to provide a process space in which the processes are performed, and supplying a reaction gas into the process space using a supply nozzle connected to the process space and exhausting the process space using an exhaust nozzle connected to the process space and an exhaust port connected to the exhaust nozzle.

Abstract: The present disclosure relates to a substrate processing apparatus, and more particularly, a substrate processing apparatus that is capable of improving process uniformity on an entire surface of a substrate. The substrate processing apparatus includes a substrate boat in which a substrate is loaded, a reaction tube in which a processing process for the substrate loaded in the substrate boat is performed, a gas supply unit configured to supply a process gas into the reaction tube through an injection nozzle disposed on one side of the reaction tube, a heating unit including a plurality of vertical heating parts, which are disposed along a circumference of the reaction tube outside the reaction tube and configured to divide the circumference to the reaction tube into a plurality of portions so as to independently heat each of the divided portions of the reaction tube, and a control unit configured to control the heating unit.

Abstract: Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.

Abstract: Provided is an apparatus for processing a substrate. The apparatus includes a chamber providing an inner space in which a process with respect to the substrate is performed, a susceptor disposed in the inner space and on which the substrate is placed, a fixing plate disposed in an exhaust port disposed in a sidewall of the chamber along a circumference of the susceptor, the fixing plate having a plurality of through-holes, and at least one sliding plate disposed on an upper or lower portion of the fixing plate to rotate with respect to a center of the susceptor, the at least one sliding plate selectively opening and closing the through-holes.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a first tube defining an inner space, a substrate holder in which a plurality of substrates are vertically stacked in the inner space of the first tube, the substrate holder defining a plurality of processing spaces in which the substrates are individually processed, a gas supply unit having a plurality of main injection holes each of which is vertically defined to correspond to each of the processing spaces to supply a gas into the first tube, and an exhaust unit configured to exhaust the gas supplied into the plurality of processing spaces in the first tube to the outside. The exhaust unit includes a plurality of exhaust holes facing the main injection holes and vertically arranged in a line to correspond to the processing spaces. Therefore, the gas may smoothly flow on the substrate.

Abstract: A substrate supporting unit, a substrate processing apparatus, and a method of manufacturing the substrate supporting unit are provided. The substrate supporting unit includes a susceptor provided with heaters to heat a substrate placed on the susceptor, and including a first temperature region and a second temperature region having a higher temperature than that of the first temperature region; a heat dissipating member including a contact surface being in thermal contact with the second temperature region; and a reflecting member disposed approximately in parallel with one surface of the susceptor to reflect heat emitted from the susceptor toward the susceptor.

Abstract: The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a lower chamber having an opened upper side, an upper chamber opening or closing the upper side of the lower chamber, the upper chamber defining an inner space, in which a process is performed on a substrate, together with the lower chamber, a showerhead disposed on a lower portion of the upper chamber to supply a reaction gas toward the inner space, wherein a buffer space is defined between the showerhead and the upper chamber, a partition member disposed in the buffer space to partition the buffer space into a plurality of diffusion regions, and a plurality of gas supply ports disposed in the upper chamber to supply the reaction gas toward each of the diffusion regions.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, each of which includes an injection part and an exhaust hole; a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space; a supply line connected to one injection part of the plurality of laminates to supply a process gas; and an exhaust line connected to one of a plurality of exhaust holes to exhaust the process gas, and the substrate processing apparatus that has a simple structure and induces a laminar flow of the process gas to uniformly supply the process gas to a top surface of the substrate.

Abstract: In accordance with an exemplary embodiment, a substrate processing apparatus includes: a tube assembly having an inner space in which substrates are processed and assembled by laminating a plurality of laminates, a substrate holder configured to support the plurality of substrates in a multistage manner in the inner space of the tube assembly, a gas supply unit installed on one side of the tube assembly to supply a process gas to each of the plurality of substrates in the inner space; and an exhaust unit connected to the tube assembly to exhaust the process gas supplied into the inner space, the substrate processing apparatus that induces a laminar flow to supply a uniform amount of process gas to a top surface of the substrate.

Abstract: Provided is a substrate processing apparatus.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a chamber including a first body part configured to provide a space in which substrates stand by and a second body part configured to provide a space in which a thin film deposition process is performed on each of the substrates, a substrate holder on which the substrates are stacked, the substrate holder being movable between the first body part and the second body part, a first supply unit configured to supply a first gas for depositing a thin film on the substrate in the second body part, a second supply unit configured to supply a second gas, which reacts with by-products generated while the thin film is deposited to generate fume, into the first body part, and an exhaust unit configured to exhaust the gases within the chamber. Thus, by-products generated while the thin film is deposited may be quickly removed.

Abstract: Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube having an inner space, a substrate support on which a plurality of substrates are stacked in multistage within the tube, the substrate support individually defining a plurality of processing spaces in which the plurality of substrates are respectively processed, a first gas supply part configured to supply a first gas into all the plurality of processing spaces, a second gas supply part comprising a plurality of injectors disposed to respectively correspond to the plurality of processing spaces so that the second gas is individually supplied onto each of the plurality of substrates, and an exhaust part configured to exhaust the gases within the tube. Thus, the gas may be individually supplied into each of the processing spaces in which the plurality of substrates are respectively processed.