Abstract: A minimum IC operating voltage searching method includes acquiring a corner type of an IC, acquiring ring oscillator data of the IC, generating a first prediction voltage according to the corner type and the ring oscillator data by using a training model, generating a second prediction voltage according to the ring oscillator data by using a non-linear regression approach under an N-ordered polynomial, and generating a predicted minimum IC operating voltage according to the first prediction voltage and the second prediction voltage. N is a positive integer.

Abstract: Self-assembled-monolayer grafted seeding and electroless plating processes for patterning of metal-alloy thin films, comprising the steps of treating the surface of the substrate by organic species, covering the organic species-SAM coated surface of dielectric substrate with a template, treating the surface by vacuum plasma, immersing the substrate into an aqueous solution, removing the hydrogen from the surface of the substrate, immersing the negatively charged dielectric surface into an aqueous metal salt solutions for adsorbing metal ions, reducing the positively charged metallic cations into neutral metal particles which act as catalysts by a reducing agent, and immersing the dielectric substrate into an electroless-plating solution for deposition of metal and metal-alloy thin film patterns.

Abstract: Process for thin-film electroless-plated deposition onto the substrate, which is either hydrophilic or hydrophobic silicon based dielectric material (e.g., silicon dioxide, silicate glass, or polysiloxanes), is a substitute for the conventional sensitization/activation route by pre-treating the surface of the dielectric substrate by plasma (H2/N2, N2, H2, or O2), immersing the substrate in a basic aqueous solution for removing hydrogen, immersing the substrate in a basic aqueous solution of metal ions for adsorbing the metal ions thereon, reducing the metal ions on the surface of the substrate, and immersing the substrate in an electroless-plating solution to deposit an electroless-plated metal film. The substrate formed of hydrophobic polysiloxanes which is properly pretreated by gaseous plasma can be immersed in a basic solution with strong oxidizing capability and/or performing a selective pattern by plasma treatment.