Patents by Inventor Sung Tsai Lin

Sung Tsai Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POLISHING COMPOSITIONS AND METHODS OF USE THEREOF
    Publication number: 20210301177
    Abstract: This disclosure features a polishing composition that includes at least one abrasive; at least one first corrosion inhibitor that includes a phosphate or a phosphonate group; at least one complexing agent; at least one second corrosion inhibitor that is at least one azole compound; and optionally a pH adjuster.
    Type: Application
    Filed: March 29, 2021
    Publication date: September 30, 2021
    Inventors: James McDonough, Ting-Kai Huang, Yannan Liang, Shu-Wei Chang, Sung Tsai Lin, Liqing Wen
  • Chemical mechanical polishing slurry for cobalt applications
    Patent number: 10676646
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: June 9, 2020
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin
  • CHEMICAL MECHANICAL POLISHING SLURRY FOR COBALT APPLICATIONS
    Publication number: 20180340094
    Abstract: A slurry that polishes surfaces or substrates which includes cobalt. The slurry further comprises an anionic and/or cationic surfactant, each of which has a phosphate group, a long chain alkyl group, or both. The slurry also includes a corrosion inhibitor, abrasives, removal rate enhancers, solvents, pH adjustors, and chelating agents. The pH of the slurry is preferably 8 or higher.
    Type: Application
    Filed: May 21, 2018
    Publication date: November 29, 2018
    Inventors: Yannan Liang, Liqing Wen, Bin Hu, Hyosang Lee, Shu-Wei Chang, Sung Tsai Lin