Patents by Inventor Sung-wee CHO

Sung-wee CHO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190383875
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop is configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Application
    Filed: August 27, 2019
    Publication date: December 19, 2019
    Inventors: HA-YOUNG KIM, SUNG-WEE CHO, DAL-HEE LEE, JAE-HA LEE
  • Patent number: 10429443
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop is configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: October 1, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-Young Kim, Sung-Wee Cho, Dal-Hee Lee, Jae-Ha Lee
  • Patent number: 10108772
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Grant
    Filed: September 21, 2016
    Date of Patent: October 23, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon Baek, Jae-woo Seo, Gi-young Yang, Dal-hee Lee, Sung-wee Cho
  • Publication number: 20170328954
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop is configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Application
    Filed: July 31, 2017
    Publication date: November 16, 2017
    Inventors: HA-YOUNG KIM, SUNG-WEE CHO, DAL-HEE LEE, JAE-HA LEE
  • Patent number: 9753086
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop os configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: September 5, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ha-Young Kim, Sung-Wee Cho, Dal-Hee Lee, Jae-Ha Lee
  • Publication number: 20170011160
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Application
    Filed: September 21, 2016
    Publication date: January 12, 2017
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon BAEK, Jae-woo SEO, Gi-young YANG, Dal-hee LEE, Sung-wee CHO
  • Patent number: 9460259
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: October 4, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sang-hoon Baek, Jae-woo Seo, Gi-young Yang, Dal-hee Lee, Sung-wee Cho
  • Publication number: 20160097811
    Abstract: A scan flip-flop includes an input unit and a flip-flop. The input unit is configured to select one signal from among a data input signal and a scan input signal to supply the selected one signal as an internal signal according to an operation mode. The flip-flop os configured to latch the internal signal according to a clock signal. The flip-flop includes a cross coupled structure that includes first and second tri-state inverters which share a first output node and face each other.
    Type: Application
    Filed: October 2, 2015
    Publication date: April 7, 2016
    Inventors: HA-YOUNG KIM, SUNG-WEE CHO, DAL-HEE LEE, JAE-HA LEE
  • Publication number: 20160055285
    Abstract: Methods of generating an integrated circuit layout include forming a standard cell by providing a first active area adjacent to a first cell boundary line. The first active area is spaced apart from the first cell boundary line by a first distance. A second active area is provided adjacent to a second cell boundary line. The second cell boundary line opposes the first cell boundary line. The second active area is spaced apart from the second cell boundary line by a second distance. Fins are formed on the first and second active areas. The fins extend in a first direction and parallel to one another in a second direction substantially perpendicular to the first direction. The first cell boundary line is parallel to the fins. The first distance and the second distance remain constant when a number of the fins on the first and second active areas is changed.
    Type: Application
    Filed: August 21, 2015
    Publication date: February 25, 2016
    Inventors: Sang-hoon BAEK, Jae-woo SEO, Gi-young YANG, Dal-hee LEE, Sung-wee CHO